GULL WING PIN Diodes 1,089

  1. Home
  2. PIN Diodes
Manufacturers
    • Agilent Technologies
    • Broadcom
    • Diodes Incorporated
    • Gec Plessey Semiconductors
    • Hewlett Packard
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Micro Commercial Components
    • Microchip Technology
    • NXP Semiconductors
    • Nte Electronics
    • Onsemi
    • Osram Opto Semiconductors
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Toshiba
Diode Type
    • PIN DIODE
Terminal Position
    • AXIAL
    • BOTTOM
    • DUAL
    • END
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
Terminal Form (1)
    • GULL WING
    • BUTT
    • C BEND
    • FLAT
    • NO LEAD
    • THROUGH-HOLE
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 1
    • 12
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape
    • ELLIPTICAL
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Diode Resistive Test Current
    • .01 mA
    • .02 mA
    • .5 mA
    • 1 mA
    • 1.5 mA
    • 10 mA
    • 100 mA
    • 2 mA
    • 20 mA
    • 25 mA
    • 3 mA
    • 5 mA
    • 50 mA
    • 500 mA
Config
    • 1SE4
    • 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMPLEX
    • RING, 4 ELEMENTS
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENT
    • SEPARATE, 3 ELEMENTS
    • SEPARATE, 4 ELEMENTS
    • SEPARATE, 5 ELEMENTS
    • SEPARATE, 6 ELEMENTS
    • SERIES CONNECTED, 2 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Frequency Band
    • C BAND
    • HIGH FREQUENCY
    • HIGH FREQUENCY TO C BAND
    • HIGH FREQUENCY TO KU BAND
    • HIGH FREQUENCY TO L BAND
    • HIGH FREQUENCY TO S BAND
    • HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • HIGH FREQUENCY TO X BAND
    • KA BAND
    • KU BAND
    • L BAND
    • L BAND TO KU BAND
    • LOW FREQUENCY
    • MEDIUM FREQUENCY
    • MEDIUM FREQUENCY TO C BAND
    • MEDIUM FREQUENCY TO L BAND
    • MEDIUM FREQUENCY TO S BAND
    • MEDIUM FREQUENCY TO VERY HIGH FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO KU BAND
    • ULTRA HIGH FREQUENCY TO L BAND
    • ULTRA HIGH FREQUENCY TO S BAND
    • ULTRA HIGH FREQUENCY TO X BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO C BAND
    • VERY HIGH FREQUENCY TO KA BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • VERY LOW FREQUENCY TO L BAND
    • X BAND
Maximum Forward Voltage (VF)
    • .34 V
    • .4 V
    • .87 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.2 V
Maximum Diode Capacitance
    • .02 pF
    • .025 pF
    • .04 pF
    • .045 pF
    • .05 pF
    • .06 pF
    • .065 pF
    • .1 pF
    • .12 pF
    • .14 pF
    • .15 pF
    • .16 pF
    • .2 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .35 pF
    • .37 pF
    • .375 pF
    • .38 pF
    • .4 pF
    • .42 pF
    • .43 pF
    • .44 pF
    • .45 pF
    • .48 pF
    • .5 pF
    • .55 pF
    • .56 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .75 pF
    • .8 pF
    • .82 pF
    • .85 pF
    • .9 pF
    • 1 pF
    • 1.1 pF
    • 1.11 pF
    • 1.2 pF
    • 1.25 pF
    • 1.3 pF
    • 1.5 pF
    • 1.6 pF
    • 1.7 pF
    • 10 pF
    • 11 pF
    • 12 pF
    • 2 pF
    • 2.4 pF
    • 3 pF
    • 38 pF
    • 4 pF
    • 5 pF
    • 6 pF
    • 8 pF
Technology
    • POSITIVE-INTRINSIC-NEGATIVE
    • SCHOTTKY
Maximum Reverse Current
    • .01 uA
    • .05 uA
    • .1 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Reverse Test Voltage
    • 0 V
    • 1 V
    • 10 V
    • 100 V
    • 15 V
    • 16 V
    • 180 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 38 V
    • 40 V
    • 5 V
    • 50 V
    • 6 V
    • 60 V
    • 80 V
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • GRID ARRAY
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Other Diodes
    • PIN Diodes
    • Rectifier Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 100 V
    • 35 V
    • 50 V
    • 60 V
    • 75 V
    • 80 V
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
Application
    • ATTENUATOR
    • ATTENUATOR; LIMITER
    • ATTENUATOR; LIMITER; SWITCHING
    • ATTENUATOR; SWITCHING
    • GENERAL PURPOSE
    • LIMITER
    • LIMITER; SWITCHING
    • SWITCHING
Minimum Operating Temperature
    • -40 Cel
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn)
    • NICKEL PALLADIUM GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN OVER NICKEL
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • E-XALF-W2
    • O-CDMW-F2
    • O-CDMW-N2
    • O-CELF-R2
    • O-CEMW-N2
    • O-CXMW-G2
    • O-LALF-W2
    • O-LELF-R2
    • O-PBCY-T2
    • O-PBCY-T3
    • O-XALF-W2
    • O-XELF-R2
    • O-XEMW-N2
    • O-XRPM-F2
    • O-XUPM-N1
    • O-XUUC-N1
    • R-CBCC-N4
    • R-CDFP-F4
    • R-CDMW-F2
    • R-CDSO-F4
    • R-CEDB-N2
    • R-CXMW-G2
    • R-LBCC-N2
    • R-MDFM-F2
    • R-PBCC-N2
    • R-PBGA-B4
    • R-PDIP-T2
    • R-PDSO-C2
    • R-PDSO-F12
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-N2
    • R-PSSO-G1
    • R-XBCC-N12
    • R-XBCC-N2
    • R-XBCC-N4
    • R-XBCC-N8
    • R-XDMW-F2
    • R-XDSO-N2
    • R-XUUC-N4
    • S-CDFP-F4
    • S-CDMW-F2
    • S-CUUC-N2
    • S-PDSO-C2
    • S-PDSO-N2
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PSSO-C2
    • S-PSSO-N2
    • S-XDSO-N2
    • S-XUUC-N1
    • S-XUUC-N2
    • X-XXMW-F2
Maximum Diode Forward Resistance
    • .3 ohm
    • .35 ohm
    • .5 ohm
    • .6 ohm
    • .65 ohm
    • .7 ohm
    • .75 ohm
    • .77 ohm
    • .8 ohm
    • .85 ohm
    • .9 ohm
    • .95 ohm
    • 1 ohm
    • 1.1 ohm
    • 1.17 ohm
    • 1.2 ohm
    • 1.25 ohm
    • 1.3 ohm
    • 1.35 ohm
    • 1.5 ohm
    • 1.7 ohm
    • 1.8 ohm
    • 1.9 ohm
    • 10 ohm
    • 100 ohm
    • 11 ohm
    • 12 ohm
    • 1200 ohm
    • 14.5 ohm
    • 2 ohm
    • 2.2 ohm
    • 2.3 ohm
    • 2.5 ohm
    • 2.8 ohm
    • 20 ohm
    • 22 ohm
    • 3 ohm
    • 3.2 ohm
    • 3.3 ohm
    • 3.5 ohm
    • 3.7 ohm
    • 3.8 ohm
    • 4 ohm
    • 4.2 ohm
    • 4.5 ohm
    • 4.9 ohm
    • 40 ohm
    • 4200 ohm
    • 5 ohm
    • 5.5 ohm
    • 6.5 ohm
    • 7 ohm
    • 7.5 ohm
    • 70 ohm
    • 8 ohm
    • 9 ohm
Moisture Sensitivity Level (MSL)
    • 1
    • 2
Case Connection
    • ANODE
    • ANODE AND CATHODE
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .1 W
    • .125 W
    • .13 W
    • .135 W
    • .14 W
    • .15 W
    • .2 W
    • .24 W
    • .25 W
    • .26 W
    • .28 W
    • .3 W
    • .315 W
    • .35 W
    • .4 W
    • .415 W
    • .5 W
    • .6 W
    • .7 W
    • .715 W
    • .75 W
    • 1 W
    • 1.25 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 2 W
    • 2.5 W
    • 3 W
    • 4.5 W
    • 6 W
    • 7.5 W
Nominal Diode Capacitance
    • .017 pF
    • .02 pF
    • .025 pF
    • .045 pF
    • .06 pF
    • .08 pF
    • .1 pF
    • .12 pF
    • .13 pF
    • .15 pF
    • .16 pF
    • .17 pF
    • .18 pF
    • .2 pF
    • .21 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .33 pF
    • .34 pF
    • .35 pF
    • .36 pF
    • .37 pF
    • .375 pF
    • .4 pF
    • .42 pF
    • .45 pF
    • .48 pF
    • .5 pF
    • .52 pF
    • .53 pF
    • .55 pF
    • .56 pF
    • .57 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.5 pF
    • 1.7 pF
    • 2 pF
    • 2.2 pF
    • 2.4 pF
    • 250000 pF
    • 4 pF
    • 700000 pF
    • 9 pF
Additional Features
    • AVAILABLE IN BOTH POLARITIES
    • EUROPEAN PART NUMBER
    • HIGH RELIABILITY
    • HIGH RELIABILITY, HIGH VOLTAGE, LOW LEAKAGE CURRENT
    • HIGH RELIABILITY, LOW DISTORTION
    • HIGH VOLTAGE
    • LOW DISTORTION
    • LOW DISTORTION, METALLURGICALLY BONDED
    • LOW HARMONIC DISTORTION
    • LOW LEAKAGE
    • LOW LEAKAGE, LOW DISTORTION
    • PD-CASE
    • TR, 7 INCH: 3000
    • TTL COMPATIBLE
Nominal Minority Carrier Lifetime
    • .0001 us
    • .004 us
    • .005 us
    • .007 us
    • .01 us
    • .02 us
    • .025 us
    • .026 us
    • .03 us
    • .035 us
    • .036 us
    • .04 us
    • .045 us
    • .05 us
    • .07 us
    • .075 us
    • .08 us
    • .09 us
    • .1 us
    • .11 us
    • .12 us
    • .125 us
    • .15 us
    • .17 us
    • .18 us
    • .2 us
    • .25 us
    • .26 us
    • .27 us
    • .28 us
    • .3 us
    • .31 us
    • .32 us
    • .35 us
    • .4 us
    • .48 us
    • .5 us
    • .55 us
    • .6 us
    • .65 us
    • .7 us
    • .75 us
    • .8 us
    • .9 us
    • 1 us
    • 1.05 us
    • 1.1 us
    • 1.17 us
    • 1.175 us
    • 1.25 us
    • 1.3 us
    • 1.5 us
    • 1.55 us
    • 1.6 us
    • 1.8 us
    • 10 us
    • 19 us
    • 2 us
    • 2.5 us
    • 2.8 us
    • 20 us
    • 25 us
    • 3 us
    • 3.5 us
    • 30 us
    • 4 us
    • 5 us
    • 50 us
    • 500 us
    • 6 us
    • 6.5 us
    • 8 us
JEDEC-95 Code
    • DO-214AC
    • DO-34
    • TO-236AB
    • TO-92
Minimum Breakdown Voltage
    • 100 V
    • 1000 V
    • 120 V
    • 15 V
    • 150 V
    • 175 V
    • 180 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 30 V
    • 300 V
    • 35 V
    • 400 V
    • 45 V
    • 50 V
    • 500 V
    • 60 V
    • 600 V
    • 65 V
    • 70 V
    • 75 V
    • 80 V
Maximum Non Repetitive Peak Forward Current
    • 2 A
    • 2.5 A
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • 5
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 225
    • 235
    • 240
    • 245
    • 260
    • 265
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Diode Resistive Test Frequency
    • 1 MHz
    • 100 MHz
    • 1000 MHz
    • 10000 MHz
    • 120 MHz
    • 1500 MHz
    • 200 MHz
    • 2200 MHz
    • 500 MHz
Reference Standard
    • AEC-Q101
    • ESA-SCC-5513/017
    • ESA-SCC-5513/030
    • IEC-60134
    • IEC-61000-4-2; 4-5
    • MIL-19500
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Diode Resistive Test Current Config Frequency Band Maximum Forward Voltage (VF) Maximum Diode Capacitance Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Minimum Operating Temperature Terminal Finish JESD-30 Code Maximum Diode Forward Resistance Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features Nominal Minority Carrier Lifetime JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Diode Resistive Test Frequency Reference Standard

ISS371

Toshiba

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

SWITCHING

TIN LEAD

R-PDSO-G2

9 ohm

Not Qualified

30 V

e0

SILICON

1SV128TE85R

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

1

50 V

SMALL OUTLINE

125 Cel

ATTENUATOR

R-PDSO-G3

Not Qualified

.4 us

50 V

SILICON

1SV312

Toshiba

PIN DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

1 V

POSITIVE-INTRINSIC-NEGATIVE

.1 uA

50 V

SMALL OUTLINE

Other Diodes

50 V

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

R-PDSO-G4

Not Qualified

e0

SILICON

JDP4P02U

Toshiba

PIN DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

2

1 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR

TIN LEAD

R-PDSO-G4

Not Qualified

.3 pF

30 V

e0

SILICON

JDP3C02AU

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ULTRA HIGH FREQUENCY

.48 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

150 Cel

SWITCHING

R-PDSO-G3

1.5 ohm

Not Qualified

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

JDP3C13U

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.44 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

150 Cel

SWITCHING

R-PDSO-G3

2.8 ohm

SILICON

1SV128TE85R2

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

1

50 V

SMALL OUTLINE

125 Cel

ATTENUATOR

R-PDSO-G3

Not Qualified

.4 us

50 V

SILICON

ISS314

Toshiba

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

SWITCHING

TIN LEAD

R-PDSO-G2

.9 ohm

Not Qualified

30 V

e0

SILICON

JDP2S10U

Toshiba

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

125 Cel

ATTENUATOR

R-PDSO-G2

5 ohm

Not Qualified

SILICON

1SV128TE85L2

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

1

50 V

SMALL OUTLINE

125 Cel

ATTENUATOR

R-PDSO-G3

Not Qualified

.4 us

50 V

SILICON

1SV128TE85L

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

1

50 V

SMALL OUTLINE

125 Cel

ATTENUATOR

R-PDSO-G3

Not Qualified

.4 us

50 V

SILICON

1SV128

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

1

50 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR

R-PDSO-G3

Not Qualified

.25 pF

.4 us

50 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SV172

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR

R-PDSO-G3

Not Qualified

.25 pF

50 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1SV172TE85L

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR

R-PDSO-G3

Not Qualified

.25 pF

50 V

SILICON

1SV172TE85R2

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

125 Cel

ATTENUATOR

R-PDSO-G3

Not Qualified

50 V

SILICON

JDP2S01U

Toshiba

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

ULTRA HIGH FREQUENCY

.9 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR

R-PDSO-G2

1 ohm

Not Qualified

.9 pF

30 V

SILICON

100 MHz

1SV307

Toshiba

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

1

30 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-G2

1.1 ohm

Not Qualified

.5 pF

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1500 MHz

1SV172TE85R

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

125 Cel

ATTENUATOR

R-PDSO-G3

Not Qualified

50 V

SILICON

1SV172TE85L2

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

125 Cel

ATTENUATOR

R-PDSO-G3

Not Qualified

50 V

SILICON

1SV237TE85R

Toshiba

PIN DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

125 Cel

ATTENUATOR

R-PDSO-G4

Not Qualified

50 V

SILICON

1SV252

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR

Tin/Lead (Sn/Pb)

R-PDSO-G3

10 ohm

Not Qualified

.25 pF

50 V

e0

SILICON

1SV252TE85L

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR

R-PDSO-G3

Not Qualified

.25 pF

50 V

SILICON

1SV271

Toshiba

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

1

50 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR

R-PDSO-G2

4.5 ohm

Not Qualified

.25 pF

50 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

100 MHz

1SV237

Toshiba

PIN DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

Varactors

50 V

125 Cel

ATTENUATOR

Tin/Lead (Sn/Pb)

R-PDSO-G4

CATHODE

Not Qualified

.25 pF

50 V

e0

SILICON

1SV252(TE85L,F)

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

125 Cel

ATTENUATOR

R-PDSO-G3

10 ohm

.2 pF

50 V

SILICON

100 MHz

1SV237TE85L

Toshiba

PIN DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

Varactors

50 V

125 Cel

ATTENUATOR

R-PDSO-G4

Not Qualified

.25 pF

50 V

SILICON

1SV237(TE85L,F)

Toshiba

PIN DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

125 Cel

ATTENUATOR

R-PDSO-G4

CATHODE

.25 pF

50 V

SILICON

1SV252TE85R

Toshiba

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

125 Cel

ATTENUATOR

R-PDSO-G3

Not Qualified

50 V

SILICON

HVM132WKTR

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

SWITCHING

R-PDSO-G3

2 ohm

Not Qualified

.15 W

60 V

SILICON

HVM14S

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR

R-PDSO-G3

7 ohm

Not Qualified

.1 W

50 V

SILICON

100 MHz

HVU133TRV

Renesas Electronics

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

SWITCHING

R-PDSO-G2

.7 ohm

Not Qualified

.15 W

15 V

SILICON

HVM14SRTR

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

ATTENUATOR

R-PDSO-G3

7 ohm

Not Qualified

.1 W

50 V

SILICON

HVU133

Renesas Electronics

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

2 mA

SINGLE

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-G2

.7 ohm

Not Qualified

.15 W

1 pF

30 V

SILICON

100 MHz

HVM14TR-E

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

ATTENUATOR

TIN BISMUTH

R-PDSO-G3

7 ohm

1

Not Qualified

.1 W

50 V

e6

SILICON

HVM187STR

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

HIGH FREQUENCY

2.4 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

ATTENUATOR

TIN LEAD

R-PDSO-G3

5.5 ohm

Not Qualified

.1 W

60 V

e0

SILICON

HVM187WKTL

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HIGH FREQUENCY

2.4 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

ATTENUATOR

TIN LEAD

R-PDSO-G3

5.5 ohm

Not Qualified

.1 W

60 V

e0

SILICON

HVM131SRTL

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

SWITCHING

R-PDSO-G3

1 ohm

Not Qualified

.15 W

60 V

SILICON

HVB14STL

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

ATTENUATOR

R-PDSO-G3

7 ohm

Not Qualified

.1 W

50 V

SILICON

HVM187WKTR

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HIGH FREQUENCY

2.4 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

ATTENUATOR

TIN LEAD

R-PDSO-G3

5.5 ohm

Not Qualified

.1 W

60 V

e0

SILICON

HVU131TRF

Renesas Electronics

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

SWITCHING

TIN LEAD

R-PDSO-G2

1 ohm

Not Qualified

.15 W

60 V

e0

SILICON

HVM132TR

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

SWITCHING

R-PDSO-G3

2 ohm

Not Qualified

.15 W

60 V

SILICON

HVM187STL-E

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

HIGH FREQUENCY

2.4 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

ATTENUATOR

TIN BISMUTH

R-PDSO-G3

5.5 ohm

1

Not Qualified

.1 W

60 V

e6

SILICON

HVM14SR

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR

R-PDSO-G3

7 ohm

Not Qualified

.1 W

50 V

SILICON

100 MHz

HVM187WKTL-E

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HIGH FREQUENCY

2.4 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

ATTENUATOR

TIN BISMUTH

R-PDSO-G3

5.5 ohm

1

Not Qualified

.1 W

60 V

e6

SILICON

HVU187TRU

Renesas Electronics

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

2.4 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

ATTENUATOR

R-PDSO-G2

5.5 ohm

Not Qualified

.1 W

60 V

SILICON

HVU131TRF-E

Renesas Electronics

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

SWITCHING

TIN BISMUTH

R-PDSO-G2

1 ohm

1

Not Qualified

.15 W

60 V

e6

SILICON

HVM131STL

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

SWITCHING

R-PDSO-G3

1 ohm

Not Qualified

.15 W

60 V

SILICON

HVM132WKTL

Renesas Electronics

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

SWITCHING

R-PDSO-G3

2 ohm

Not Qualified

.15 W

60 V

SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.