GULL WING PIN Diodes 1,089

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
BAR65-03WE6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		MATTE TIN	R-PDSO-G2	.95 ohm	1		Not Qualified		.5 pF		.08 us	30 V	e3		260	SILICON	100 MHz
BAR64-07	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SEPARATE, 2 ELEMENTS	MEDIUM FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G4	1.35 ohm	1	CATHODE	Not Qualified	.25 W	.35 pF	LOW DISTORTION	1.55 us	150 V				SILICON
BAR60E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G4			ANODE AND CATHODE	Not Qualified	.25 W			1 us		e3			SILICON
BAR63-05E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	COMMON CATHODE, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		MATTE TIN	R-PDSO-G3	2 ohm	1		Not Qualified	.25 W	.25 pF		.075 us	50 V	e3		260	SILICON	100 MHz
BAR60	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	.01 mA	COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-55 Cel	TIN LEAD	R-PDSO-G4	1200 ohm		ANODE AND CATHODE	Not Qualified	.25 W	.35 pF		1 us	100 V	e0			SILICON	100 MHz
BAR63-04S	Infineon Technologies	PIN DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	PLASTIC/EPOXY		2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND	1.2 V	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	.01 uA	4	35 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	SWITCHING	-55 Cel	TIN LEAD	R-PDSO-G6	2 ohm			Not Qualified	.25 W			.075 us	50 V	e0			SILICON
BAR6404WE6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	1.35 ohm				.25 W			1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR63E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				SWITCHING			R-PDSO-G3	2 ohm			Not Qualified	.25 W			.075 us	50 V				SILICON
BAR64E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G3	20 ohm			Not Qualified	.25 W		HIGH VOLTAGE	1.55 us	200 V	e3			SILICON
BAR6405E6433XT	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	1.35 ohm				.25 W			1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR64-04S	Infineon Technologies	PIN DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	MEDIUM FREQUENCY TO S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		4	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING		TIN LEAD	R-PDSO-G6	1.35 ohm			Not Qualified		.23 pF		1.55 us	150 V	e0			SILICON	100 MHz
BAR63-06W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING			R-PDSO-G3	2 ohm	1		Not Qualified	.25 W	.3 pF		.075 us	50 V				SILICON
BAR64-04E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G3	20 ohm	1		Not Qualified	.25 W	.17 pF	HIGH VOLTAGE	1.55 us	200 V	e3		260	SILICON	100 MHz
BAR64	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	MEDIUM FREQUENCY TO S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-55 Cel	TIN LEAD	R-PDSO-G3	1.35 ohm			Not Qualified	.25 W	.35 pF	HIGH VOLTAGE	1.55 us	200 V	e0			SILICON
BAR63	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	SMALL OUTLINE	PIN Diodes			SWITCHING		TIN LEAD	R-PDSO-G3	2 ohm			Not Qualified	.25 W	.25 pF		.075 us	50 V	e0			SILICON
BAR6503WE6327XT	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY		.9 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			125 Cel	SWITCHING	-55 Cel		R-PDSO-G2	.9 ohm				.25 W			.08 us	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR64-04W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	MEDIUM FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	1.35 ohm	1		Not Qualified	.25 W	.23 pF	LOW DISTORTION	1.55 us	150 V				SILICON		AEC-Q101
BAR63-04E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		MATTE TIN	R-PDSO-G3	2 ohm			Not Qualified	.25 W	.25 pF		.075 us	50 V	e3			SILICON	100 MHz
BAR61E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	.01 mA	COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G4	4200 ohm		ANODE AND CATHODE	Not Qualified	.25 W	.2 pF		1 us	100 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR64-05	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	COMMON CATHODE, 2 ELEMENTS	MEDIUM FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING	-55 Cel	TIN	R-PDSO-G3	1.35 ohm	1		Not Qualified	.25 W	.35 pF	LOW DISTORTION	1.55 us	150 V	e3			SILICON		AEC-Q101
BAR63-04W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		TIN	R-PDSO-G3	2 ohm	1		Not Qualified	.25 W	.3 pF		.075 us	50 V	e3			SILICON
BAR64-06E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	COMMON ANODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G3	20 ohm	1		Not Qualified	.25 W	.17 pF	HIGH VOLTAGE	1.55 us	200 V	e3		260	SILICON	100 MHz
BAR6405E6433HTMA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	1.35 ohm				.25 W			1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR60E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G4			ANODE AND CATHODE	Not Qualified	.25 W			1 us		e3			SILICON
BAR61	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	.01 mA	COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G4	12 ohm	1	CATHODE	Not Qualified	.25 W	.35 pF	LOW DISTORTION	1 us	100 V				SILICON	100 MHz
BAR66E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		125 Cel			MATTE TIN	R-PDSO-G3		1		Not Qualified	.25 W	.35 pF		.7 us	150 V	e3		260	SILICON
BAR6306E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	SWITCHING		TIN	R-PDSO-G3	2 ohm	1			.25 W			.075 us	50 V	e3			SILICON
BAR64-03WE6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G2	20 ohm			Not Qualified	.25 W	.17 pF	HIGH VOLTAGE	1.55 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR6304WE6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	SWITCHING			R-PDSO-G3	2 ohm				.25 W			.075 us	50 V				SILICON
BAR63-03W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		TIN	R-PDSO-G2	2 ohm	1		Not Qualified	.25 W	.25 pF		.075 us	50 V	e3			SILICON
BAR66E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		125 Cel			MATTE TIN	R-PDSO-G3		1		Not Qualified	.25 W	.35 pF		.7 us	150 V	e3		260	SILICON
BAR63-05E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	COMMON CATHODE, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		MATTE TIN	R-PDSO-G3	2 ohm	1		Not Qualified	.25 W	.25 pF		.075 us	50 V	e3		260	SILICON	100 MHz
BAR64-04E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G3	20 ohm			Not Qualified	.25 W	.17 pF	HIGH VOLTAGE	1.55 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR63-05W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		TIN	R-PDSO-G3	2 ohm	1		Not Qualified	.25 W	.3 pF		.075 us	50 V	e3			SILICON
BAR6406WE6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	1.35 ohm				.25 W			1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR6405WE6433HTMA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	MEDIUM FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	1.35 ohm				.25 W		LOW DISTORTION	1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR64-05W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	MEDIUM FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING	-55 Cel	TIN	R-PDSO-G3	1.35 ohm	1		Not Qualified	.25 W	.23 pF	LOW DISTORTION	1.55 us	150 V	e3			SILICON		AEC-Q101
BAR63-05	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	COMMON CATHODE, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		TIN	R-PDSO-G3	2 ohm	1		Not Qualified	.25 W	.25 pF		.075 us	50 V	e3			SILICON
BAR64-06	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	COMMON ANODE, 2 ELEMENTS	MEDIUM FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING	-55 Cel	TIN	R-PDSO-G3	1.35 ohm	1		Not Qualified	.25 W	.35 pF	LOW DISTORTION	1.55 us	150 V	e3			SILICON		AEC-Q101
BAR64-05E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	COMMON CATHODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G3	20 ohm	1		Not Qualified	.25 W	.17 pF	HIGH VOLTAGE	1.55 us	200 V	e3		260	SILICON	100 MHz
BAR6405WH6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	1.35 ohm				.25 W			1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR67-03W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		1	35 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	R-PDSO-G2	1.8 ohm			Not Qualified		.4 pF		.7 us	150 V	e0			SILICON
BAR64-06W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	MEDIUM FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING	-55 Cel	TIN	R-PDSO-G3	1.35 ohm	1		Not Qualified	.25 W	.23 pF	LOW DISTORTION	1.55 us	150 V	e3			SILICON		AEC-Q101
BAR64-05E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	COMMON CATHODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G3	20 ohm	1		Not Qualified	.25 W	.17 pF	HIGH VOLTAGE	1.55 us	200 V	e3		260	SILICON	100 MHz
BAR65-07E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				SWITCHING			R-PDSO-G4	.95 ohm		CATHODE	Not Qualified					30 V				SILICON
BAR61E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	.01 mA	COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G4	4200 ohm	1	ANODE AND CATHODE	Not Qualified	.25 W	.2 pF		1 us	100 V	e3		260	SILICON	100 MHz
BAR6406E6327XT	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	MEDIUM FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	1.35 ohm				.25 W		LOW DISTORTION	1.55 us	150 V				SILICON		AEC-Q101
BAR64-07E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SEPARATE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G4	20 ohm	1	CATHODE	Not Qualified	.25 W	.17 pF	HIGH VOLTAGE	1.55 us	200 V	e3		260	SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.