NO LEAD PIN Diodes 205

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
RKP453KE	Renesas Electronics	PIN DIODE	BOTTOM	NO LEAD	8	YES	RECTANGULAR	UNSPECIFIED	10 mA	1SE4		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	4	1 V	CHIP CARRIER	PIN Diodes	125 Cel	SWITCHING			R-XBCC-N8	1.3 ohm			Not Qualified	.2 W	.35 pF		30 V				SILICON	100 MHz
RKP202KN	Renesas Electronics	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.43 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		125 Cel	SWITCHING			R-PBCC-N2	1.8 ohm			Not Qualified	.1 W							SILICON
RKP200KN	Renesas Electronics	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING			R-PDSO-N2	1.3 ohm			Not Qualified	.1 W							SILICON
RKP204KP	Renesas Electronics	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	CHIP CARRIER	PIN Diodes	125 Cel	SWITCHING			R-PBCC-N2	1.1 ohm	1		Not Qualified	.1 W	.35 pF		30 V				SILICON	100 MHz
HMPP-3864-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS			POSITIVE-INTRINSIC-NEGATIVE	2		CHIP CARRIER			ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified			.5 us	50 V	e3			SILICON
5082-3305	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	KU BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1 ohm			Not Qualified	.7 W			70 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-389T-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	CHIP CARRIER	PIN Diodes	150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF	.2 us	100 V	e3	20	260	SILICON	100 MHz
HPND-0002	Broadcom	PIN DIODE	UPPER	NO LEAD	2	YES	SQUARE	UNSPECIFIED		SINGLE		.2 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	UNCASED CHIP	PIN Diodes	150 Cel	ATTENUATOR; LIMITER; SWITCHING	-65 Cel	GOLD	S-XUUC-N2		1	ANODE	Not Qualified	.25 W	.2 pF	1.5 us	100 V	e4			SILICON
5082-3304	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	3 W		.1 us	250 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3895-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2	5 V	CHIP CARRIER	PIN Diodes	150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF	.2 us	100 V	e3	20	260	SILICON	100 MHz
5082-0047	Broadcom	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED		SINGLE		.15 pF	POSITIVE-INTRINSIC-NEGATIVE	1		UNCASED CHIP		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		S-XUUC-N1				Not Qualified			.4 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3864-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS			POSITIVE-INTRINSIC-NEGATIVE	2		CHIP CARRIER			ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified			.5 us	50 V	e3			SILICON
HMPP-3893-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		CHIP CARRIER			SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified			.2 us	100 V	e3			SILICON
HMPP-3865	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	1 mA	SEPARATE, 2 ELEMENTS		.2 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	UNCASED CHIP	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-XUUC-N4	22 ohm	1		Not Qualified		.2 pF	.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3863-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS			POSITIVE-INTRINSIC-NEGATIVE	2		CHIP CARRIER			ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified			.5 us	50 V	e3			SILICON
HMPP-3860-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.2 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF	.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3864-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS			POSITIVE-INTRINSIC-NEGATIVE	2		CHIP CARRIER			ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified			.5 us	50 V	e3			SILICON
HMPP-389T	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED					POSITIVE-INTRINSIC-NEGATIVE			UNCASED CHIP		150 Cel			Tin (Sn)	R-XUUC-N4		1		Not Qualified					e3	20	260	SILICON
HMPP-3895	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		UNCASED CHIP		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-XUUC-N4	3.8 ohm	1		Not Qualified			.2 us	50 V	e3	20	260	SILICON
HMPP-3893-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		CHIP CARRIER			SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified			.2 us	100 V	e3			SILICON
HMPP-3894-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		CHIP CARRIER			SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified			.2 us	100 V	e3			SILICON
5082-3306	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	KU BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1 ohm			Not Qualified	1.25 W			70 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3894-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		CHIP CARRIER			SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified			.2 us	100 V	e3			SILICON
5082-3303	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	3 W		.1 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3892-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2	5 V	CHIP CARRIER	PIN Diodes	150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF	.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3890-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	CHIP CARRIER	PIN Diodes	150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF	.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-389T-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	CHIP CARRIER	PIN Diodes	150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF	.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3893-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		CHIP CARRIER			SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified			.2 us	100 V	e3			SILICON
HMPP-3890-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	CHIP CARRIER	PIN Diodes	150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF	.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3860-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.2 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF	.5 us	50 V	e3	20	260	SILICON	100 MHz
5082-3201	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	3 W		.1 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3862-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.2 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF	.5 us	50 V	e3	20	260	SILICON	100 MHz
5082-0030	Broadcom	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED		SINGLE		.12 pF	POSITIVE-INTRINSIC-NEGATIVE	1		UNCASED CHIP		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		S-XUUC-N1				Not Qualified			.4 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HPND-0003	Broadcom	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED		SINGLE		1.2 pF	POSITIVE-INTRINSIC-NEGATIVE	1		UNCASED CHIP		150 Cel	ATTENUATOR; LIMITER; SWITCHING	-65 Cel		S-XUUC-N1				Not Qualified	.25 W		.07 us	35 V				SILICON
HMPP-3890-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	CHIP CARRIER	PIN Diodes	150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF	.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3860	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE		.2 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	UNCASED CHIP	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-XUUC-N4	22 ohm	1		Not Qualified		.2 pF	.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3863-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS			POSITIVE-INTRINSIC-NEGATIVE	2		CHIP CARRIER			ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified			.5 us	50 V	e3			SILICON
HMPP-3862-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.2 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF	.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3865-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.2 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF	.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-389T-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	CHIP CARRIER	PIN Diodes	150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF	.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3865-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.2 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF	.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3860-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.2 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF	.5 us	50 V	e3	20	260	SILICON	100 MHz
5082-3101	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	1 W		.1 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3890	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		UNCASED CHIP		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-XUUC-N4	3.8 ohm	1		Not Qualified			.2 us	50 V	e3	20	260	SILICON
HMPP-3892-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2	5 V	CHIP CARRIER	PIN Diodes	150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF	.2 us	100 V	e3	20	260	SILICON	100 MHz
5082-3202	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	3 W		.1 us	300 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3894-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		CHIP CARRIER			SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified			.2 us	100 V	e3			SILICON
HPND-0001	Broadcom	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED		SINGLE		.2 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	UNCASED CHIP	PIN Diodes	150 Cel	ATTENUATOR; LIMITER; SWITCHING			S-XUUC-N1				Not Qualified	.25 W	.2 pF	1.8 us	100 V				SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.