NO LEAD PIN Diodes 205

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
APD1510-000	Skyworks Solutions	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED	10 mA	SINGLE	KA BAND		.1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		UNCASED CHIP	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING			S-XUUC-N1	2 ohm			Not Qualified			LOW DISTORTION	.3 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	500 MHz
APD1520-000	Skyworks Solutions	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED	10 mA	SINGLE	KA BAND		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		1		UNCASED CHIP	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING	-65 Cel		S-XUUC-N1	1.2 ohm			Not Qualified			LOW DISTORTION	.9 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	500 MHz
CLA4604-219	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	10 mA	SINGLE	KA BAND			POSITIVE-INTRINSIC-NEGATIVE		1	0 V	MICROWAVE	PIN Diodes		175 Cel	LIMITER	-65 Cel		O-CDMW-N2	2.5 ohm			Not Qualified		.12 pF		.007 us	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	500 MHz
SMP1304-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	PLASTIC/EPOXY	1 mA	SINGLE	HIGH FREQUENCY TO C BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	30 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			S-PDSO-N2	2 ohm	1	CATHODE		3 W	.23 pF	LOW DISTORTION	1 us	200 V			260	SILICON	100 MHz
SMP1320-040LF	Skyworks Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	S BAND		.25 pF	POSITIVE-INTRINSIC-NEGATIVE		1	30 V	CHIP CARRIER	PIN Diodes		175 Cel	SWITCHING			R-PBCC-N2	.9 ohm	1		Not Qualified	.75 W	.23 pF		.4 us	50 V		40	260	SILICON	100 MHz
SMP1321-040LF	Skyworks Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO S BAND		.25 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			175 Cel	SWITCHING			R-PBCC-N2	2 ohm	1		Not Qualified	.75 W			.4 us			40	260	SILICON
SMP1331-040LF	Skyworks Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	HIGH FREQUENCY TO X BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	30 V	CHIP CARRIER			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-PBCC-N2	14.5 ohm				.25 W	.18 pF	LOW DISTORTION	.6 us			NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
SMP1340-040LF	Skyworks Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	5 mA	SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		175 Cel	SWITCHING	-55 Cel		R-XBCC-N2	1.2 ohm	1		Not Qualified	.75 W	.21 pF		.1 us	50 V		40	260	SILICON	100 MHz
GC4430-00	Microchip Technology	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY TO KU BAND		.1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	UNCASED CHIP			150 Cel	ATTENUATOR; SWITCHING	-55 Cel	Gold (Au)	S-XUUC-N1	1.5 ohm			Not Qualified			HIGH RELIABILITY, LOW DISTORTION	.6 us	300 V	e4			SILICON	100 MHz	MIL-19500
GC4701-6LP	Microchip Technology	PIN DIODE	DUAL	NO LEAD	6	YES	SQUARE	PLASTIC/EPOXY	10 mA	SINGLE	X BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	16 V	SMALL OUTLINE			150 Cel	ATTENUATOR; LIMITER	-55 Cel		S-PDSO-N6	2 ohm					.45 pF		.01 us	20 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1000 MHz
GC4750-42	Microchip Technology	PIN DIODE	END	NO LEAD	2	YES	ROUND	UNSPECIFIED		SINGLE	KU BAND			POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE				LIMITER			O-XEMW-N2				Not Qualified					250 V				SILICON
MA4L021-120	M/a-com Technology Solutions	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO KU BAND			POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE			175 Cel	LIMITER			O-CEMW-N2				Not Qualified			LOW LEAKAGE		35 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
MA4P604-255	M/a-com Technology Solutions	PIN DIODE	END	NO LEAD	2	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1		DISK BUTTON	PIN Diodes		175 Cel	SWITCHING			R-CEDB-N2	1 ohm		CATHODE	Not Qualified			HIGH RELIABILITY, HIGH VOLTAGE, LOW LEAKAGE CURRENT	3 us	1000 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
MSWSE-010-15S	M/a-com Technology Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	SINGLE	S BAND		.22 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	SMALL OUTLINE			175 Cel	SWITCHING			R-PDSO-N2	.8 ohm					.17 pF		.65 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	500 MHz
NSVDP301MX2WT5G	Onsemi	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-55 Cel	NICKEL PALLADIUM GOLD	R-PDSO-N2		1				.33 pF			80 V	e4	30	260	SILICON		AEC-Q101
NSP301MX3T5G	Onsemi	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY		.23 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	CHIP CARRIER			125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PBCC-N2	2 ohm					.23 pF			50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1 MHz
NSDP301MX3T5G	Onsemi	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER			150 Cel	ATTENUATOR; SWITCHING	-55 Cel	NICKEL PALLADIUM GOLD	R-PBCC-N2		1				.33 pF			80 V	e4	30	260	SILICON
NSDP301MX2WT5G	Onsemi	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		1	80 V	SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-55 Cel	NICKEL PALLADIUM GOLD	R-PDSO-N2		1				.33 pF				e4	30	260	SILICON
NSP301MX2WT5G	Onsemi	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY		.23 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-N2	2 ohm					.23 pF					NOT SPECIFIED	NOT SPECIFIED	SILICON	1 MHz
BAP142LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.26 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PBCC-N2	1.3 ohm	1		Not Qualified	.13 W	.25 pF		.11 us	50 V	e3	30	260	SILICON	100 MHz
BAP142LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.26 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PBCC-N2	1.3 ohm	1		Not Qualified	.13 W			.11 us		e3	30	260	SILICON
BAP1321LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.38 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-PBCC-N2	1.3 ohm			Not Qualified	.13 W	.32 pF		.48 us	60 V				SILICON	100 MHz
BAP1321LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.38 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PBCC-N2	1.3 ohm			Not Qualified	.13 W			.48 us		e3			SILICON
BAP142L	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER				ATTENUATOR; SWITCHING			R-PBCC-N2	.9 ohm			Not Qualified	.315 W			.12 us					SILICON
BAP63LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.135 W	.34 pF		.32 us	50 V	e3			SILICON	100 MHz
BAP51L	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	500 mA	SINGLE	S BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PBCC-N2	1.5 ohm			Not Qualified	.5 W	.23 pF		.55 us	60 V				SILICON	100 MHz
BAP51LX,315	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	500 mA	SINGLE	S BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-N2	1.5 ohm	1		Not Qualified	.14 W	.3 pF		.55 us	60 V	e3	30	260	SILICON	100 MHz
BAP64LX,315	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-N2	1.5 ohm	1		Not Qualified	.15 W	.3 pF		1 us	60 V	e3	30	260	SILICON	100 MHz
BAP50LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.55 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel		-65 Cel	Tin (Sn)	R-PBCC-N2	5 ohm	1		Not Qualified	.15 W	.4 pF		1 us	50 V	e3	30	260	SILICON	100 MHz
BAP55L,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.28 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-PBCC-N2	.7 ohm			Not Qualified	.5 W			.28 us		e3			SILICON
BAP65LX	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-N2	.9 ohm	1		Not Qualified	.135 W	.37 pF		.18 us	30 V	e3	30	260	SILICON	100 MHz
BAP55L	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.28 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PBCC-N2	.7 ohm			Not Qualified	.5 W	.27 pF		.28 us	50 V				SILICON	100 MHz
BAP50LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.55 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel		-65 Cel	TIN	R-PBCC-N2	5 ohm			Not Qualified	.15 W			1 us		e3	30	260	SILICON
BAP51LX	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-N2	1.5 ohm			Not Qualified	.14 W			.55 us		e3	30	260	SILICON
BAP55LX,315	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.28 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-N2	4.5 ohm	1		Not Qualified	.135 W	.28 pF		.27 us	50 V	e3	30	260	SILICON	100 MHz
BAP51L,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.5 W			.55 us	60 V	e3			SILICON
BAP63LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.135 W	.34 pF		.32 us	50 V	e3			SILICON	100 MHz
BAP55LX	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.28 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER				ATTENUATOR; SWITCHING		Tin (Sn)	R-PBCC-N2	.8 ohm	1		Not Qualified	.135 W			.27 us		e3	30	260	SILICON
BAP64LX	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-N2	1.5 ohm	1		Not Qualified	.15 W			1 us		e3	30	260	SILICON
BAP65LX,315	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-N2	.9 ohm	1		Not Qualified	.135 W	.37 pF		.18 us	30 V	e3	30	260	SILICON	100 MHz
BAR50-02L	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	HIGH FREQUENCY TO C BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-XBCC-N2	4.5 ohm			Not Qualified	.25 W	.1 pF	LOW DISTORTION	1.1 us	50 V	e3			SILICON
BXY44-T2P	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BAR88-07LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING			R-XBCC-N4	2.5 ohm			Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-081LS	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	8	YES	RECTANGULAR	UNSPECIFIED	3 mA	1SE4			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		4	0 V	CHIP CARRIER	PIN Diodes		125 Cel	SWITCHING			R-XBCC-N8	2.3 ohm			Not Qualified	.1 W	.3 pF		.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR50-02LE6327TR	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	HIGH FREQUENCY TO C BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	ATTENUATOR; SWITCHING			R-XBCC-N2	4.5 ohm				.25 W		LOW DISTORTION	1.1 us			NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-07L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	150 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm	1		Not Qualified	.25 W			.75 us	80 V				SILICON
BAR90-098LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	150 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm			Not Qualified	.25 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-02LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER	Rectifier Diodes	80 V	150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm			Not Qualified	.25 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.