3 Transient Suppression Devices 1,185

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

PESD3V3S2UAT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

330 W

5.6 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

5.2 V

e3

30

260

SILICON

6 V

MMBZ15VDL/DG,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

15 V

AVALANCHE

.005 uA

2

12.8 V

SMALL OUTLINE

12.8 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

21.2 V

14.3 V

SILICON

15.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD12VS2UQT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

150 W

15 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

R-PDSO-F3

UNIDIRECTIONAL

35 V

14.7 V

SILICON

15.3 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0L2UU,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

70 W

AVALANCHE

2

SMALL OUTLINE

5 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

5.8 V

SILICON

6.6 V

AEC-Q101; IEC-60134

MMBZ18VCL/DG,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

18 V

AVALANCHE

.005 uA

2

14.5 V

SMALL OUTLINE

14.5 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

25 V

17.1 V

SILICON

18.9 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

MMBZ18VCL,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

18 V

AVALANCHE

.005 uA

2

14.5 V

SMALL OUTLINE

14.5 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

25 V

17.1 V

SILICON

18.9 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD5V0S2UAT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

260 W

6.8 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

6.4 V

e3

30

260

SILICON

7.2 V

MMBZ6V2AL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

24 W

AVALANCHE

2

SMALL OUTLINE

3 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.29 W

TO-236AB

5.89 V

e3

SILICON

6.51 V

PESD5V0L2UM

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

30 W

6.8 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

Not Qualified

.25 W

6.46 V

e3

30

260

SILICON

7.14 V

PESD5V0V2BM

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

CATHODE

IEC-61643-321

5.5 V

SILICON

7.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

MMBZ15VDL,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

15 V

AVALANCHE

.005 uA

2

12.8 V

SMALL OUTLINE

12.8 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

21.2 V

14.3 V

SILICON

15.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

MMBZ15VDL/DG,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

15 V

AVALANCHE

.005 uA

2

12.8 V

SMALL OUTLINE

12.8 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

21.2 V

14.3 V

SILICON

15.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD24VS2UQ

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

150 W

27 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

Tin (Sn)

R-PDSO-F3

1

UNIDIRECTIONAL

Not Qualified

26.5 V

e3

30

260

SILICON

27.5 V

PESD15VS2UT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

160 W

18 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

15 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

17.6 V

e3

30

260

SILICON

18.4 V

PESD24VU1UT,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

200 W

AVALANCHE

2

SMALL OUTLINE

24 V

150 Cel

R-PDSO-G3

UNIDIRECTIONAL

TO-236AB

25.4 V

SILICON

30.3 V

MMBZ18VCL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

18 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

14.5 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

25 V

SILICON

MMBZ27VCL/DG,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

1.1 V

27 V

AVALANCHE

.005 uA

2

22 V

SMALL OUTLINE

22 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

38 V

25.65 V

SILICON

28.35 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

MMBZ12VDL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

12 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

8.5 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

17 V

SILICON

PESD5V0V2BMB,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

CATHODE

IEC-61643-321

5.5 V

SILICON

7.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD12VS2UAT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

180 W

15 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

14.7 V

e3

30

260

SILICON

15.3 V

MMBZ20VCL,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

17 V

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

TO-236AB

28 V

e3

30

260

SILICON

PESD3V3U1UT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

80 W

6.4 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

20 V

5.8 V

e3

30

260

SILICON

6.9 V

PESD1IVN-U

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

SMALL OUTLINE

26.5 V

150 Cel

-55 Cel

R-PDSO-G3

BIDIRECTIONAL

IEC-61643-321

28 V

SILICON

32 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

MMBZ27VCL/DG,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

1.1 V

27 V

AVALANCHE

.005 uA

2

22 V

SMALL OUTLINE

22 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

38 V

25.65 V

SILICON

28.35 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

MMBZ12VAL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

12 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

8.5 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

17 V

SILICON

MMBZ12VAL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

40 W

12 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

8.5 V

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.36 W

TO-236AB

17 V

11.4 V

e3

30

260

SILICON

12.6 V

MMBZ5V6AL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

24 W

AVALANCHE

2

SMALL OUTLINE

3 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.29 W

TO-236AB

5.32 V

e3

SILICON

5.88 V

PESD5V2S2UAT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

260 W

AVALANCHE

2

SMALL OUTLINE

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

SILICON

MMBZ33VAL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

33 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

26 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

46 V

SILICON

MMBZ20VCL/DG,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

20 V

AVALANCHE

.005 uA

2

17 V

SMALL OUTLINE

17 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

28 V

19 V

SILICON

21 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD5V0L2UMB

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-55 Cel

TIN

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

IEC-61643-321

6.46 V

e3

SILICON

7.14 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0U1UT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

80 W

7.6 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

21 V

7 V

e3

30

260

SILICON

8.2 V

MMBZ20VAL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

40 W

20 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

17 V

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.36 W

TO-236AB

28 V

19 V

e3

30

260

SILICON

21 V

MMBZ33VCL,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

33 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

26 V

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

TO-236AB

46 V

e3

30

260

SILICON

PESD12VS2UT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

180 W

15 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

14.7 V

e3

30

260

SILICON

15.3 V

MMBZ10VAL,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

24 W

10 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

6.5 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

.36 W

TO-236AB

14.2 V

9.5 V

e3

30

260

SILICON

10.5 V

MMBZ15VDL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

12.8 V

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

21.2 V

e3

30

260

SILICON

PESD5V0U1UT,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

80 W

AVALANCHE

2

SMALL OUTLINE

5 V

150 Cel

R-PDSO-G3

UNIDIRECTIONAL

TO-236AB

7 V

SILICON

8.2 V

MMBZ12VDL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

12 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

8.5 V

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

17 V

e3

30

260

SILICON

PESD12VU1UT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

200 W

15 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

39 V

14.2 V

e3

30

260

SILICON

16.7 V

PESD5V0V2BMB

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

CATHODE

IEC-61643-321

5.5 V

SILICON

7.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

MMBZ12VDL/DG,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

12 V

AVALANCHE

.005 uA

2

8.5 V

SMALL OUTLINE

8.5 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

17 V

11.4 V

SILICON

12.6 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

MMBZ20VCL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

17 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

28 V

SILICON

MMBZ27VCL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

27 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

22 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

38 V

SILICON

PESD3V3U1UT,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

80 W

AVALANCHE

2

SMALL OUTLINE

3.3 V

150 Cel

R-PDSO-G3

UNIDIRECTIONAL

TO-236AB

5.8 V

SILICON

6.9 V

MMBZ12VDL,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

12 V

AVALANCHE

.005 uA

2

8.5 V

SMALL OUTLINE

8.5 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

17 V

11.4 V

SILICON

12.6 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD5V0X2UMB

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-65 Cel

R-PBCC-N3

UNIDIRECTIONAL

ANODE

IEC-61643-321

7.5 V

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD24VS2UAT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

160 W

27 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

26.5 V

e3

30

260

SILICON

27.5 V

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.