VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
MMVL2101T1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V			TIN LEAD	R-PDSO-G2	1		Not Qualified	.2 W	6.8 pF	HIGH RELIABILITY		10 %	30 V	e0		235	SILICON	2.5
1N5682	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	600	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	8.2 pF		DO-7	20 %	45 V	e0			SILICON	3.1
1N5474	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	250	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	68 pF		DO-7	20 %	30 V	e0			SILICON	2.9
1N5450	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT		.02 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	33 pF		DO-7	20 %	30 V	e0			SILICON	2.6
1N5702	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	375	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	22 pF		DO-7	20 %	65 V	e0			SILICON	3.2
SVC236	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	70	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY	.05 uA	2	10 V	SMALL OUTLINE		16 V	125 Cel			R-PDSO-G3					97.095 pF				16 V				SILICON	5
MV1634	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE				1		LONG FORM					TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	22 pF		DO-204AA	10 %	20 V	e0			SILICON	2
1N5690	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	450	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	39 pF		DO-7	20 %	45 V	e0			SILICON	3.3
1N5439	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	450	GLASS	SINGLE			.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	3.3 pF			20 %	30 V	e0			SILICON	2.3
MV104RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT			2		CYLINDRICAL	Varactors	32 V			TIN LEAD	O-PBCY-T3			Not Qualified	.28 W	39.5 pF	1% MATCHING GUARANTEED	TO-92	6.33 %	32 V	e0		235	SILICON	2.5
1N4811	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	50 V	LONG FORM	Varactors	50 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	47 pF		DO-7	20 %	55 V	e0			SILICON	2.33
MMBV2105LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V	150 Cel		TIN	R-PDSO-G3	1		Not Qualified	.225 W	15 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e3	30	260	SILICON	2.5
MMBV2108LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1		Not Qualified	.225 W	27 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0	30	235	SILICON	2.5
SVC201SP	Onsemi	VARIABLE CAPACITANCE DIODE				NO											Varactors	9 V			Tin/Lead (Sn/Pb)						39 pF					e0
1N4788	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	25 V	LONG FORM	Varactors	25 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	10 pF		DO-7	20 %	28 V	e0			SILICON	2.34
SVC342M	Onsemi	VARIABLE CAPACITANCE DIODE				NO		200									Varactors	16 V									485 pF
1N5689	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	33 pF		DO-7	20 %	45 V	e0			SILICON	3.3
MV2111	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	150	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL	Varactors	30 V	150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	47 pF		TO-92	10 %	30 V	e0			SILICON	2.5
1N4797	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	15 V	LONG FORM	Varactors	15 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	56 pF		DO-7	20 %	17 V	e0			SILICON	2.32
MMVL409T1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			Tin/Lead (Sn/Pb)	R-PDSO-G2	1		Not Qualified	.2 W	29 pF	HIGH RELIABILITY		10.34 %	20 V	e0	30	235	SILICON	1.5
MMVL109T1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G2	1		Not Qualified	.2 W	29 pF	HIGH RELIABILITY		10.34 %	30 V	e0	30	235	SILICON	5
1N5698	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	400	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	10 pF		DO-7	20 %	65 V	e0			SILICON	2.8
SVC354	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMPLEX				3		SMALL OUTLINE	Varactors	16 V				R-PDSO-G6			Not Qualified		52 pF			8 %	16 V				SILICON	17.5
SVC371	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMPLEX				5		SMALL OUTLINE	Varactors	16 V				R-PDSO-G8			Not Qualified		500 pF			8 %	16 V				SILICON	18.5
MMBV809LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	75	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1		Not Qualified	.225 W	5.3 pF	HIGH RELIABILITY	TO-236AB	15.09 %	20 V	e0	30	235	SILICON	1.8
MMBV2109LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1		Not Qualified	.225 W	33 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0	30	235	SILICON	2.5
MV2104	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL	Varactors	30 V	150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	12 pF		TO-92	10 %	30 V	e0			SILICON	2.5
MV2109G	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN SILVER COPPER	O-PBCY-T2			Not Qualified	.28 W	33 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	30 V	e1		260	SILICON	2.5
1N5471	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	450	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	39 pF		DO-7	20 %	30 V	e0			SILICON	2.9
MV104ZL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T3			Not Qualified	.28 W	39.5 pF	EUROPEAN PART NUMBER	TO-92	6.33 %	32 V	e0			SILICON	2.5
SVC704-TL-E	Onsemi	VARIABLE CAPACITANCE DIODE																			Tin/Bismuth (Sn/Bi)		1									e6			SILICON
1N5453	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	GLASS	SINGLE	ABRUPT		.02 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	56 pF		DO-7	20 %	30 V	e0			SILICON	2.6
1N5687	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	22 pF		DO-7	20 %	45 V	e0			SILICON	3.3
MV209RLRM	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-92	10.34 %	30 V	e0			SILICON	5
SVC389-TL-E	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	MEDIUM FREQUENCY	.1 uA	2	9 V	SMALL OUTLINE		16 V	150 Cel		Tin/Bismuth (Sn/Bi)	R-PDSO-G3	1				497.5 pF			5.53 %	16 V	e6			SILICON	19.5
1N5472	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	400	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	47 pF		DO-7	20 %	30 V	e0			SILICON	2.9
MV2101RLRM	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	6.8 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0			SILICON	2.5
1N5709	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	150	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	82 pF		DO-7	20 %	65 V	e0			SILICON	3.2
1N4801	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	100 V	LONG FORM	Varactors	100 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	6.8 pF		DO-7	20 %	110 V	e0			SILICON	2.4
SMMBV809LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	75	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN LEAD	R-PDSO-G3	1		Not Qualified	.225 W	5.3 pF	HIGH RELIABILITY	TO-236AB	15.09 %	20 V	e0			SILICON	1.8
MV2105RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0			SILICON	2.5
SVC230-TB-E	Onsemi	VARIABLE CAPACITANCE DIODE																			TIN BISMUTH		1									e6	30	260	SILICON
1N5701	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	375	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	18 pF		DO-7	20 %	65 V	e0			SILICON	2.8
LV2209	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL	Varactors	30 V			TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	33 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	25 V	e0		235	SILICON	2.5
MV2105	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	15 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	30 V	e0		235	SILICON	2.5
MV104	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT			2		CYLINDRICAL	Varactors	32 V			TIN LEAD	O-PBCY-T3			Not Qualified	.28 W	39.5 pF	1% MATCHING GUARANTEED	TO-92	6.33 %	32 V	e0		235	SILICON	2.5
LV2205RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	25 V	e0			SILICON	2.5
MMBV2109L	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V			TIN LEAD	R-PDSO-G3			Not Qualified	.225 W	33 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0			SILICON	2.5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.