VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

Reset All

Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BB249TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM						O-LELF-R2		ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE							SILICON	8
BB804W235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3			Not Qualified	.25 W					18 V				SILICON	1.65
BB909B	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		LONG FORM						O-LALF-W2		ISOLATED	Not Qualified		25 pF	MATCHED TO 2.5%	DO-34						SILICON	12
BB804W212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3			Not Qualified	.25 W					18 V				SILICON	1.65
BB164/T3	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		69 pF	2% MATCHED SETS OF 15 DIODES ARE AVAILABLE				e3			SILICON	19.5
BB909B-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2		ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE			32 V				SILICON	12
BB911/A113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	23.3
BBY31-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			85 Cel			R-PDSO-G3			Not Qualified		16.5 pF			11.11 %	30 V				SILICON
BB200T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE						R-PDSO-G3			Not Qualified		70 pF		TO-236AB	6 %	18 V				SILICON	5
BBY31T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			85 Cel		TIN	R-PDSO-G3			Not Qualified		16.5 pF			11.11 %	30 V	e3			SILICON
BB417153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified				DO-34		30 V				SILICON	2
934042930135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		.01 uA	1	10 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			Not Qualified	.2 W					10 V				SILICON	1.6929
BB135T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	MATTE TIN	R-PDSO-G2			Not Qualified		19.25 pF				30 V	e3		260	SILICON	8.9
BB909A133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	12
934050200115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		19.74 pF	EXCELLENT MATCHING TO 2% DMA		7.7 %		e3			SILICON	8.45
BB151,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		19.1 pF					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	1.45
BB417	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY		1		LONG FORM						O-LALF-W2		ISOLATED	Not Qualified				DO-34						SILICON	2
BB155/T3	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE						R-PDSO-G2			Not Qualified		47.5 pF			4.84 %					SILICON
934057929115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE
BB135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2	1		Not Qualified		19.25 pF				30 V	e3	30	260	SILICON	8.9
BB143T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE					TIN	R-PDSO-F2			Not Qualified		5.3 pF					e3			SILICON	2.1
BB158/T3	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		39.3 pF			6.36 %	30 V	e3			SILICON	14.5
BB159T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		18.75 pF			4 %		e3			SILICON	8.2
BB515-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			Not Qualified		17.75 pF	CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES		9.85 %	30 V				SILICON	8
BB620-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			Not Qualified			CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			30 V				SILICON	19.5
933815170215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G3			Not Qualified		24 pF								SILICON	12
933814570215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G3			Not Qualified		16.5 pF						NOT SPECIFIED	NOT SPECIFIED	SILICON	8
BBY31TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G3			Not Qualified										SILICON
934057929135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE
BB135/A2,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES									Varactors	30 V									19.25 pF
BB240TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM						O-LELF-R2		ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE							SILICON	14
934050190135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-F2			Not Qualified		38.5 pF	EXCELLENT MATCHING TO 2% DMA		10 %	32 V	e3			SILICON	13.5
BB207	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE	Varactors	15 V	125 Cel	-55 Cel	Tin (Sn)	R-PDSO-G3	1		Not Qualified		81 pF		TO-236AB	6.17 %		e3	30	260	SILICON	2.6
BBY31,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G3			Not Qualified		16.5 pF			11.11 %	30 V	e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
933184920215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G3			Not Qualified		16.5 pF					e3			SILICON
BB804G212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3			Not Qualified	.25 W					18 V				SILICON	1.65
BB187T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		29.3 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE			32 V	e3			SILICON	11
BB135,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2	1		Not Qualified		19.25 pF				30 V	e3	30	260	SILICON	8.9
934053250115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		19.11 pF			4.66 %	32 V	e3			SILICON	8.45
BB911-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2		ISOLATED	Not Qualified			CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			32 V				SILICON	21
BB405B143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			3% MATCHED SETS AVAILABLE	DO-34		30 V				SILICON	7.6
BB150135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			Not Qualified	.2 W					30 V				SILICON	14
934033290135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		18.75 pF			4 %		e3			SILICON	8.2
BB182T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		57 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		8.77 %	32 V	e3			SILICON	20.6
934050200135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-F2			Not Qualified		19.74 pF	EXCELLENT MATCHING TO 2% DMA		7.7 %		e3			SILICON	8.45
934056469215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE						R-PDSO-G3			Not Qualified		70 pF		TO-236AB	6 %	18 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
BB249	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LELF-R2		ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE			30 V				SILICON	8
BB147	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G2			Not Qualified		102 pF	2% MATCHED SETS OF 8 DIODES ARE AVAILABLE		9.8 %		e3			SILICON	35

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.