VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

934040030135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-G2

Not Qualified

39.3 pF

e3

SILICON

14.5

BB148T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

Not Qualified

39.3 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

260

SILICON

14.5

BB809143

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

28 V

LONG FORM

100 Cel

-55 Cel

O-LALF-W2

ISOLATED

Not Qualified

3% MATCHED SETS AVAILABLE

DO-34

30 V

SILICON

8

BB143

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

8 V

MATTE TIN

R-PDSO-F2

Not Qualified

5.3 pF

e3

260

SILICON

2.1

BB153/T3

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

38.5 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

10 %

32 V

e3

SILICON

13.5

934067727115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

TIN

1

e3

30

260

BB804

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.02 uA

2

16 V

SMALL OUTLINE

Varactors

18 V

100 Cel

R-PDSO-G3

Not Qualified

44.25 pF

TO-236AB

5.08 %

18 V

40

260

SILICON

1.65

934055909115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

Tin (Sn)

R-PDSO-F2

1

Not Qualified

6.9 pF

7.25 %

e3

30

260

SILICON

2.2

BB158-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G2

Not Qualified

39.3 pF

6.36 %

30 V

SILICON

14.5

BB249TRL13

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

1

LONG FORM

O-LELF-R2

ISOLATED

Not Qualified

3% MATCHED SETS ARE AVAILABLE

SILICON

8

BB131,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

Not Qualified

12.5 pF

36 %

30 V

e3

30

260

SILICON

12

BBY40TRL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Tin (Sn)

R-PDSO-G3

1

Not Qualified

e3

SILICON

8

BBY31TRL13

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

SILICON

BB112

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

.05 uA

1

12 V

CYLINDRICAL

85 Cel

O-PBCY-T2

Not Qualified

440 pF

3% MATCHED SETS ARE AVAILABLE ,3% MATCHED SET OF THREE DIODES

TO-92

SILICON

BB134

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

17.5 pF

0.5% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.9

BB405B136

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

.01 uA

1

28 V

LONG FORM

100 Cel

-55 Cel

O-LALF-W2

ISOLATED

Not Qualified

3% MATCHED SETS AVAILABLE

DO-34

30 V

SILICON

7.6

BB804Y

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

2

SMALL OUTLINE

R-PDSO-G3

Not Qualified

43.75 pF

1.71 %

18 V

SILICON

1.65

934055720135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

31.75 pF

7.72 %

32 V

e3

SILICON

11

BB149,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

18.75 pF

4 %

e3

SILICON

8.2

BB119133

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.05 uA

1

15 V

LONG FORM

150 Cel

O-LALF-W2

ISOLATED

Not Qualified

DO-35

15 V

SILICON

1.3

934042230115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

38.5 pF

10 %

32 V

e3

SILICON

13.5

BB189,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

32 V

14.95 pF

BB182LX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

125 Cel

-55 Cel

TIN

R-PDSO-N2

Not Qualified

57 pF

8.77 %

e3

SILICON

20.6

BB204B-TAPE-REEL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

O-PBCY-T3

Not Qualified

SILICON

2.5

934042240115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.2 W

1.6% MATCHED SETS AVAILABLE

30 V

SILICON

17.5

934042230135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

38.5 pF

10 %

32 V

e3

SILICON

13.5

BB241TRL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

1

LONG FORM

O-LELF-R2

ISOLATED

Not Qualified

3% MATCHED SETS ARE AVAILABLE

SILICON

21

934055720115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

31.75 pF

7.72 %

32 V

e3

SILICON

11

BB809T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

28 V

LONG FORM

100 Cel

O-LALF-W2

ISOLATED

Not Qualified

39 pF

CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES

DO-34

30 V

SILICON

8

BB189,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

32 V

14.95 pF

934050200335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

7.7 %

e3

SILICON

8.45

BB145B

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

8 V

Tin (Sn)

R-PDSO-F2

1

Not Qualified

6.8 pF

5.88 %

6 V

e3

30

260

SILICON

2.2

BB901T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.00000001 uA

1

28 V

SMALL OUTLINE

Varactors

30 V

85 Cel

R-PDSO-G3

Not Qualified

1.055 pF

30 V

SILICON

12

BB417113

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

.01 uA

1

28 V

LONG FORM

100 Cel

-55 Cel

O-LALF-W2

ISOLATED

Not Qualified

DO-34

30 V

SILICON

2

934050190115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

38.5 pF

EXCELLENT MATCHING TO 2% DMA

10 %

32 V

e3

SILICON

13.5

BBY42235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

24 pF

SILICON

12

BB152T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

57 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

8.77 %

32 V

e3

SILICON

20.6

934053250335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.11 pF

4.66 %

32 V

e3

SILICON

8.45

BB405B133

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

.01 uA

1

28 V

LONG FORM

100 Cel

-55 Cel

O-LALF-W2

ISOLATED

Not Qualified

3% MATCHED SETS AVAILABLE

DO-34

30 V

SILICON

7.6

934018000115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-G2

1

Not Qualified

12.5 pF

36 %

e3

SILICON

12

BB182

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

57 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

8.77 %

32 V

e3

SILICON

20.6

BBY42TRL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

SILICON

12

933202800115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

4.2 pF

7.14 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.65

BB145BT/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

TIN

R-PDSO-F2

Not Qualified

6.8 pF

5.88 %

6 V

e3

SILICON

2.2

934067723115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

TIN

1

e3

30

260

BB182,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

Tin (Sn)

52 pF

e3

BB151

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

TIN

R-PDSO-G2

Not Qualified

19.1 pF

e3

SILICON

1.45

BB143,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

NOT APPLICABLE

Not Qualified

5.3 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.1

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.