VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

BB149

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

18.75 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

4 %

30 V

e3

SILICON

8.2

934018010115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-G2

Not Qualified

67.5 pF

11.11 %

e3

SILICON

24

BB804R212

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.02 uA

2

16 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G3

Not Qualified

.25 W

18 V

SILICON

1.65

934050190335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

38.5 pF

10 %

32 V

e3

SILICON

13.5

BB202,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

6 V

85 Cel

-55 Cel

TIN

R-PDSO-F2

1

Not Qualified

8.59 %

e3

30

260

SILICON

2.5

BB809

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

28 V

LONG FORM

100 Cel

-55 Cel

O-LALF-W2

ISOLATED

Not Qualified

39 pF

CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES

DO-34

30 V

SILICON

8

BB909B143

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

28 V

LONG FORM

100 Cel

-55 Cel

O-LALF-W2

ISOLATED

Not Qualified

2.5% MATCHED SETS ARE AVAILABLE

DO-34

30 V

SILICON

12

BB212-TAPE-REEL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

O-PBCY-T3

Not Qualified

SILICON

22.5

BB174LX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

TIN

1

e3

BB179BLX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

CHIP CARRIER

Varactors

125 Cel

-55 Cel

TIN

R-PBCC-N2

Not Qualified

2.1 pF

CAPACITANCE MATCHED TO 2%

8.43 %

32 V

e3

SILICON

8.45

BB172X

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

32 V

125 Cel

-55 Cel

R-PDSO-G2

1

38.5 pF

10 %

32 V

260

SILICON

13.5

IEC-60134

BB173LX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

TIN

1

e3

BB179BLX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

Tin (Sn)

19.1 pF

e3

BB179,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.45

BBY62235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

ULTRA HIGH FREQUENCY

2

SMALL OUTLINE

R-PDSO-G4

Not Qualified

16.5 pF

SILICON

BB179B,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

18.22 pF

e3

BB179,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.45

BBY62TRL13

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

ULTRA HIGH FREQUENCY

2

SMALL OUTLINE

R-PDSO-G4

Not Qualified

17.5 pF

SILICON

9.7

BB179B,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.11 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

4.66 %

32 V

e3

SILICON

8.45

BB178LXT/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

32 V

BB173LXYL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

32 V

125 Cel

-55 Cel

R-PDSO-N2

38.5 pF

10 %

32 V

SILICON

13.5

IEC-60134

BB178,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

32 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

38.5 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

e3

SILICON

13.5

BB174LXX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

19.75 pF

BB178,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

32 V

TIN

e3

BB179,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

18.22 pF

e3

BB179

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.45

BBY62TRL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

ULTRA HIGH FREQUENCY

2

SMALL OUTLINE

R-PDSO-G4

Not Qualified

17.5 pF

SILICON

9.7

BB179LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-N2

Not Qualified

19.75 pF

7.848 %

e3

SILICON

8.45

BB179B-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

19.11 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

4.66 %

32 V

SILICON

8.45

BB179,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

18.22 pF

e3

BB173

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

32 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

1

38.65 pF

10 %

e3

SILICON

13.5

IEC-60134

BBY62-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

ULTRA HIGH FREQUENCY

.01 uA

2

28 V

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G4

CATHODE

Not Qualified

16.5 pF

30 V

e3

SILICON

BB175

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

32 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

1

57 pF

8.77 %

32 V

e3

SILICON

20.6

IEC-60134

BB179LX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-N2

Not Qualified

19.75 pF

7.848 %

e3

SILICON

8.45

BB178/T3

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

32 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

38.5 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

e3

SILICON

13.5

BB171

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

32 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

57 pF

8.77 %

32 V

e3

SILICON

20.6

IEC-60134

BB179-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.45

BB179BT/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.11 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

4.66 %

32 V

e3

SILICON

8.45

BB179B

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.11 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

4.66 %

32 V

e3

SILICON

8.45

BB174

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

30 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

1

2.1 pF

e3

SILICON

8.45

IEC-60134

BB174LXYL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

R-PDSO-N2

19.75 pF

7.85 %

SILICON

8.45

IEC-60134

BB172

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

38.5 pF

10 %

32 V

e3

SILICON

13.5

IEC-60134

BBY62212

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

ULTRA HIGH FREQUENCY

2

SMALL OUTLINE

R-PDSO-G4

Not Qualified

16.5 pF

SILICON

BB178LX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CHIP CARRIER

Varactors

32 V

125 Cel

-55 Cel

TIN

R-PBCC-N2

Not Qualified

38.5 pF

10 %

e3

SILICON

13.5

BB173LXX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

32 V

38.5 pF

BB170

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

39.3 pF

6.36 %

e3

SILICON

14.5

IEC-60134

BB179T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.45

BB178,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

32 V

TIN

e3

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.