VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Output Current	Maximum Forward Voltage (VF)	Maximum Reverse Recovery Time	No. of Elements	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	Maximum Non Repetitive Peak Forward Current	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BB664-02V-H7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY				1	SMALL OUTLINE	Varactors	35 V	150 Cel	-55 Cel		R-PDSO-F2	1			41.8 pF			6.59 %	30 V				260	SILICON	11
BB664-02VE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY				1	SMALL OUTLINE	Varactors	35 V				R-PDSO-F2		Not Qualified		41.8 pF			6.59 %	30 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	11
BB644E7908	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	35 V								41.8 pF
BBY35F	Infineon Technologies	VARIABLE CAPACITANCE DIODE	AXIAL	GULL WING	2	YES	ROUND	250	UNSPECIFIED	SINGLE	HYPERABRUPT					1	MICROWAVE			175 Cel			O-XAMW-G2		Not Qualified						22 V					SILICON	3.5
BB837-E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	35 V			Tin/Lead (Sn/Pb)					6.6 pF						e0
BB914E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS						2	SMALL OUTLINE	Varactors	18 V				R-PDSO-G3		Not Qualified		43.75 pF	1.5% MATCHED SETS AVAILABLE		2.86 %	18 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	2.28
BB659C-02V-H7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	30 V			MATTE TIN		1			39 pF						e3		260
BB857H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT					1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				6.6 pF			9.09 %	30 V					SILICON	9.7
BB68902VE7908XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY				1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				56.5 pF	CAPACITANCE MATCHED TO 2%		9.33 %				NOT SPECIFIED	NOT SPECIFIED	SILICON	14.5
BB565H7912XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY				1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				20 pF	LOW INDUCTANCE		7.5 %				NOT SPECIFIED	NOT SPECIFIED	SILICON	6.3
BB689-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY				1	SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1	Not Qualified		56.5 pF	CAPACITANCE MATCHED TO 2%		9.33 %						SILICON	14.5
BB689H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY				1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				56.5 pF	CAPACITANCE MATCHED TO 2%		9.33 %						SILICON	14.5
BB664-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY				1	SMALL OUTLINE	Varactors	35 V				R-PDSO-F2	1	Not Qualified		41.8 pF			6.59 %	30 V					SILICON	11
BB565-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY				1	SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1	Not Qualified		20 pF	LOW INDUCTANCE		7.5 %						SILICON	6.3
BB545E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY				1	SMALL OUTLINE	Varactors	35 V				R-PDSO-G2		Not Qualified		20 pF							NOT SPECIFIED	NOT SPECIFIED	SILICON	9
BB804E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS						2	SMALL OUTLINE	Varactors	18 V				R-PDSO-G3		Not Qualified					6.15 %	18 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	1.65
BAW222	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS			.1 A	.715 V	.004 us	2	SMALL OUTLINE	Rectifier Diodes	85 V	150 Cel		MATTE TIN	R-PDSO-G3		Not Qualified	.25 W	.5 pF				85 V	4.5 A	e3			SILICON
BB689-02V-H7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	35 V			MATTE TIN		1			56.5 pF						e3		260
BB801	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	30 V			TIN LEAD					1 pF						e0
BBY26S1	Infineon Technologies	VARIABLE CAPACITANCE DIODE				NO		200										Varactors	120 V								22 pF
BB304-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS						2	CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V					SILICON	1.65
BB535E7908	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	35 V					1			18.7 pF								260
BB659C02VH7912XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY				1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				39 pF			7.01 %	35 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	9.5
BB565-02VE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	35 V								20 pF
BB835	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		S BAND				1	SMALL OUTLINE	Varactors	30 V	150 Cel	-55 Cel	TIN LEAD	R-PDSO-G2		Not Qualified		9.1 pF			8.11 %			e0			SILICON	13.5
BB659C-02V-H7908	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	30 V					1			39 pF								260
BB857E7908	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	35 V								6.6 pF
BB204B-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS						2	CYLINDRICAL						O-XBCY-T3		Not Qualified						32 V					SILICON	2.55
BB659C02VH7908XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY				1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				39 pF			7.01 %	35 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	9.5
BB804SF2-E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	18 V								44.75 pF
BB659CH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY				1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				39 pF			7.01 %	35 V					SILICON	9.5
BBY33BB2	Infineon Technologies	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	4000	UNSPECIFIED	SINGLE	ABRUPT					1	MICROWAVE	Varactors	25 V				O-XEMW-N2		Not Qualified		1.2 pF				25 V					SILICON	2.5
BXY18AB5	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	35 V								.6 pF
BB644	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY				1	SMALL OUTLINE	Varactors	30 V				R-PDSO-G2	1	Not Qualified		41.8 pF			6.59 %	30 V					SILICON	11
BB831	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		L BAND				1	SMALL OUTLINE	Varactors	30 V				R-PDSO-G2	1	Not Qualified		8.8 pF	CAPACITANCE MATCHED TO 3%		11.36 %						SILICON	7.8
BB659C-H7912	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	30 V					1			39 pF								260
BB535	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY				1	SMALL OUTLINE	Varactors	30 V	150 Cel	-55 Cel	TIN	R-PDSO-G2	1	Not Qualified		18.7 pF	LOW INDUCTANCE		6.67 %	30 V		e3			SILICON	6
BB545E7904XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY				1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2				20 pF	LOW INDUCTANCE		7.5 %						SILICON	6.3
BAW222E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS			.1 A	.715 V	.004 us	2	SMALL OUTLINE	Rectifier Diodes	85 V	150 Cel		MATTE TIN	R-PDSO-G3		Not Qualified	.25 W	1.5 pF				85 V	4.5 A	e3			SILICON
BB689-E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	35 V			MATTE TIN		1			56.5 pF						e3
BBY33DA2	Infineon Technologies	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	3500	UNSPECIFIED	SINGLE	ABRUPT					1	MICROWAVE	Varactors	30 V				O-XEMW-N2		Not Qualified		2 pF				30 V					SILICON	3
BB439E7263	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	28 V								43 pF
BB659C-02VE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	35 V								39 pF
BB535E7904XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY				1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2				18.7 pF	LOW INDUCTANCE		6.67 %	30 V					SILICON	6
Q62702-B663	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY				1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2				5.3 pF			15.09 %	7 V					SILICON	1.55
BB837E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		S BAND				1	SMALL OUTLINE					TIN	R-PDSO-G2	1	Not Qualified		6.6 pF						e3			SILICON	9.7
BB664-02	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES												Varactors	30 V								41.8 pF
BB304A	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS						2	CYLINDRICAL	Varactors	20 V				O-PBCY-T3		Not Qualified		42 pF		TO-92		18 V					SILICON	1.65

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.