Infineon Technologies - BB801

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Minimum Quality Factor: 200; Maximum Repetitive Peak Reverse Voltage: 16 V; Nominal Diode Capacitance: 461 pF;

The Onsemi 1N5444 Varactor Diode has a Min Quality Factor of 400, Max Reverse Current of 0.02uA, and Nominal Diode Capacitance of 12pF. It is used in RF applications for tuning circuits due to its Variable Capacitance Diode Classification as ABRUPT.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N5453 by Onsemi is a varactor diode with a min quality factor of 200, max reverse current of 0.02 uA, and nominal capacitance of 56 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 15 pF; Maximum Repetitive Peak Reverse Voltage: 15 V;

MMBV2103LT1 by Onsemi is a varactor diode with a min quality factor of 400, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 10 pF and a min breakdown voltage of 30 V, making it ideal for RF tuning circuits in communication systems. The diode's small outline package with gull wing terminals and tin lead finish allows for easy surface mount assembly.

BB909B-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 32 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications, its isolated case connection ensures reliability.

SVC230 by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 100 and Variable Capacitance Diode Classification: ABRUPT. Ideal for Very High Frequency applications, it features a Max Reverse Current of 0.05 uA and operates at temperatures up to 125 °C.

MMVL3102T1 by Onsemi is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. It has a nominal capacitance of 22 pF and a breakdown voltage of 30 V, making it suitable for small outline packages in RF circuits. With gull wing terminals and tin/lead finish, this diode offers precise variable capacitance control.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Varactors;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 30 V; Nominal Diode Capacitance: 19.25 pF;

MV2109RLRAG by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 20; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .45 pF;

MMVL109T1 by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. Ideal for very high frequency applications, this single-configured diode in a small outline package is surface mountable and has a max power dissipation of 0.2 W.

1N5704 by Onsemi is a Varactor Diode with 33pF capacitance, 65V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 5; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BB182,115 by NXP Semiconductors is a varactor diode with a capacitance ratio of 20.6 and breakdown voltage of 32V. It operates in the very high frequency band, suitable for applications requiring variable capacitance like tuning circuits. This single-configured diode comes in a small outline package with dual terminals and can withstand temperatures from -55 to 125°C.

MMVL2101T1G by Onsemi is a varactor diode with 6.8pF capacitance, 30V breakdown voltage, and 0.2W power dissipation. Ideal for RF applications due to its variable capacitance property and small outline package style. Suitable for surface mount designs requiring high-frequency tuning capabilities.