VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

Reset All

Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio	Reference Standard
BB804W215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3			Not Qualified	.25 W					18 V				SILICON	1.65
BB155T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE	Varactors	10 V				R-PDSO-G2			Not Qualified		47.5 pF			4.84 %					SILICON
BB149A	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		19.74 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		7.7 %	30 V	e3			SILICON	8.45
BB202T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES									Varactors	6 V
934056324115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G2			Not Qualified		15 pF								SILICON	1.55
BB909A136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	12
BB200	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE	Varactors	18 V	85 Cel	-55 Cel	MATTE TIN	R-PDSO-G3			Not Qualified		70 pF		TO-236AB	6 %	18 V	e3		260	SILICON	5
934056920115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE			85 Cel	-55 Cel	Tin (Sn)	R-PDSO-F2	1		Not Qualified		30.85 pF			8.59 %		e3	30	260	SILICON	2.5
BB219	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LELF-R2		ISOLATED	Not Qualified			CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			30 V				SILICON	12
BB145C	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE	Varactors	12 V				R-PDSO-F2			Not Qualified					5.88 %	10 V				SILICON	2.39
BBY42-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			85 Cel			R-PDSO-G3			Not Qualified		24 pF		TO-236AB		30 V				SILICON	12
BB619	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			Not Qualified		37.25 pF	CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES		10.06 %	30 V				SILICON	12.5
BB184,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	13 V	125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		14 pF	2% MATCHED SETS OF 5 DIODES ARE AVAILABLE		9.29 %	13 V	e3			SILICON	6
BB134T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		17.5 pF	0.5% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE			30 V	e3			SILICON	8.9
934040040115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		18.75 pF					e3			SILICON	8.2
934019370135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2	1		Not Qualified		19.25 pF			9.09 %		e3			SILICON	8.9
BBY42	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.00000001 uA	1	28 V	SMALL OUTLINE	Varactors	30 V	85 Cel			R-PDSO-G3			Not Qualified		24 pF		TO-236AB		30 V				SILICON	12
BB417143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified				DO-34		30 V				SILICON	2
934042250135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.02 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified	.2 W		2% MATCHED SETS AVAILABLE			30 V	e3			SILICON	35
BB153,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	32 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		38.5 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		10 %	32 V	e3			SILICON	13.5
BB405B	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY		1		LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified		11 pF	MATCHED TO 3%	DO-34						SILICON	7.6
BB804G215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3			Not Qualified	.25 W					18 V				SILICON	1.65
BB911/A153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	23.3
933879420215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G3			Not Qualified		44.25 pF			5.08 %	18 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.65
BB405BT/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY		1		LONG FORM	Varactors	30 V				O-LALF-W2		ISOLATED	Not Qualified		11 pF	MATCHED TO 3%	DO-34						SILICON	7.6
BB145B,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE	Varactors	8 V	150 Cel	-55 Cel	TIN	R-PDSO-F2	1		Not Qualified		6.8 pF			5.88 %	6 V	e3	30	260	SILICON	2.2	IEC-60134
BB804GT/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G3			Not Qualified		45.75 pF			1.64 %	18 V				SILICON	1.65
BB405B153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			3% MATCHED SETS AVAILABLE	DO-34		30 V				SILICON	7.6
BB909B-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2		ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE			32 V				SILICON	12
BB417136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified				DO-34		30 V				SILICON	2
BB150-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G2			Not Qualified		42 pF			9.52 %					SILICON	14
BB199,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES									Varactors	20 V									39.5 pF
934050110115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2	1		Not Qualified		16 pF			10 %		e3	30	260	SILICON	2.7
BB132	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		2.5 pF	1% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE		2.53 %	30 V	e3			SILICON	24
934056920135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE			85 Cel	-55 Cel	TIN	R-PDSO-F2	1		Not Qualified		30.85 pF			8.59 %		e3	30	260	SILICON	2.5
BB215TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY		1		LONG FORM						O-LELF-R2		ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE							SILICON	7.6
BB809133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			3% MATCHED SETS AVAILABLE	DO-34		30 V				SILICON	8
BB158	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		39.3 pF			6.36 %	30 V	e3			SILICON	14.5
BB159/T3	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		18.75 pF			4 %		e3			SILICON	8.2
BB901-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			85 Cel			R-PDSO-G3			Not Qualified		1.055 pF				30 V				SILICON	12
BB156,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE	Varactors	10 V	125 Cel	-55 Cel	Tin (Sn)	R-PDSO-G2	1		Not Qualified		16 pF			10 %		e3	30	260	SILICON	2.7
BB219TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM						O-LELF-R2		ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE							SILICON	12
BBY31212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G3			Not Qualified		16.5 pF								SILICON
BB911/A116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	23.3
BB142	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE	Varactors	8 V			TIN	R-PDSO-F2			Not Qualified		4.6 pF					e3			SILICON	2
BB809113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			3% MATCHED SETS AVAILABLE	DO-34		30 V				SILICON	8
934018030135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		19.25 pF			9.09 %		e3			SILICON	8.9
934019370115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2	1		Not Qualified		19.25 pF			9.09 %		e3			SILICON	8.9

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.