VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BB146	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G2			Not Qualified		39 pF	EXCELLENT MATCHING TO 1.6% DMA		10.26 %					SILICON	17.5
BBY42TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G3			Not Qualified										SILICON	12
BB187,315	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES									Varactors	35 V			TIN											e3
BB119143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.05 uA	1	15 V	LONG FORM			150 Cel			O-LALF-W2		ISOLATED	Not Qualified				DO-35		15 V				SILICON	1.3
BB619-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			Not Qualified		37.25 pF	CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES		10.06 %	30 V				SILICON	12.5
BB146T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G2			Not Qualified		39 pF	EXCELLENT MATCHING TO 1.6% DMA		10.26 %					SILICON	17.5
BB910133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	14
BB119153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.05 uA	1	15 V	LONG FORM			150 Cel			O-LALF-W2		ISOLATED	Not Qualified				DO-35		15 V				SILICON	1.3
BBY31	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G3			Not Qualified		16.5 pF			11.11 %	30 V	e3			SILICON
BB151T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		19.1 pF					e3			SILICON	1.45
BB804R235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3			Not Qualified	.25 W					18 V				SILICON	1.65
BB804,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE	Varactors	18 V	125 Cel	-55 Cel	MATTE TIN	R-PDSO-G3			Not Qualified		44.25 pF		TO-236AB	5.08 %	18 V	e3		260	SILICON	1.65
BB202LX,315	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		CHIP CARRIER	Varactors	6 V	85 Cel	-55 Cel	TIN	R-PBCC-N2			Not Qualified		30.85 pF			8.59 %		e3			SILICON	2.5
BB240	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LELF-R2		ISOLATED	Not Qualified			CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			32 V				SILICON	14
934042930115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		.01 uA	1	10 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			Not Qualified	.2 W					10 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.6929
BB804W	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G3			Not Qualified		44.75 pF			1.68 %	18 V				SILICON	1.65
BB149T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	MATTE TIN	R-PDSO-G2			Not Qualified		18.75 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		4 %	30 V	e3		260	SILICON	8.2
BBY39T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.01 uA	2	28 V	SMALL OUTLINE			85 Cel			R-PDSO-G3			Not Qualified		16.5 pF	MATCHED PAIR AVAILABLE	TO-236AB		30 V				SILICON	8
BB219TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM						O-LELF-R2		ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE							SILICON	12
BB199	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE			150 Cel	-65 Cel	TIN	R-PDSO-F2				.3 W	39.5 pF			7.59 %		e3			SILICON	2.8
BB901	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.00000001 uA	1	28 V	SMALL OUTLINE	Varactors	28 V	85 Cel			R-PDSO-G3			Not Qualified		1.055 pF				30 V				SILICON	12
BB119113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.05 uA	1	15 V	LONG FORM			150 Cel			O-LALF-W2		ISOLATED	Not Qualified				DO-35		15 V				SILICON	1.3
BB909A113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	12
BB804Y235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3			Not Qualified	.25 W					18 V				SILICON	1.65
BB417-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.1 uA	1	20 V	LONG FORM			100 Cel			O-LALF-W2		ISOLATED	Not Qualified										SILICON	2
934055438335	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	Tin (Sn)	R-PDSO-F2	1		Not Qualified		12.5 pF			36 %		e3	30	260	SILICON	12
BB198	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE			150 Cel	-65 Cel	TIN	R-PDSO-F2				.3 W	26.75 pF			6.54 %	20 V	e3			SILICON	4.3
BB119-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		2 uA	1	15 V	LONG FORM			200 Cel			O-LALF-W2		ISOLATED	Not Qualified										SILICON	1.3
BB208-03,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE	Varactors	10 V	125 Cel	-55 Cel	TIN	R-PDSO-G2	1		Not Qualified		10.1 pF					e3	30	260	SILICON	3.7
BB187,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES									Varactors	35 V			TIN											e3
BB119	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE			1		LONG FORM						O-LALF-W2		ISOLATED	Not Qualified		17 pF		DO-35						SILICON	1.3
934055721335	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-F2			Not Qualified		50 pF			6 %	34 V				SILICON	17
BA591/A2,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES									Varactors	35 V									.8 pF
BBY39212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G3			Not Qualified		16.5 pF								SILICON	8
BB147T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		102 pF	2% MATCHED SETS OF 8 DIODES ARE AVAILABLE		9.8 %		e3			SILICON	35
BB804TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE						R-PDSO-G3			Not Qualified										SILICON	1.65
BB911/AT/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM	Varactors	30 V				O-LALF-W2		ISOLATED	Not Qualified		60 pF	MATCHED TO 2.5%	DO-34						SILICON	23.3
934047500135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		57 pF			8.77 %	32 V	e3			SILICON	20.6
BB241	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LELF-R2		ISOLATED	Not Qualified			CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			32 V				SILICON	21
5961-01-514-4880	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES									Varactors	30 V			MATTE TIN		1				36 pF					e3
BB159-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G2			Not Qualified		18.75 pF			4 %					SILICON	8.2
BB202	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE	Varactors	6 V	85 Cel	-55 Cel	Tin (Sn)	R-PDSO-F2	1		Not Qualified					8.59 %		e3	30	260	SILICON	2.5
BB182,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES									Varactors	35 V			Tin (Sn)						52 pF					e3
BB804-1	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			100 Cel			R-PDSO-G3			Not Qualified										SILICON	1.65
BB119116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.05 uA	1	15 V	LONG FORM			150 Cel			O-LALF-W2		ISOLATED	Not Qualified				DO-35		15 V				SILICON	1.3
BB910153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	14
BB148/T3	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		39.3 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE			30 V	e3			SILICON	14.5
BB910113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	14

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.