VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BB178,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	32 V	125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified	38.5 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		32 V	e3			SILICON	13.5
BB179B,315	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V			TIN					18.22 pF				e3
BB178T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	32 V	125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified	38.5 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		32 V	e3			SILICON	13.5
BBY62,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY	.01 uA	2	28 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	MATTE TIN	R-PDSO-G4		CATHODE	Not Qualified	16.5 pF			30 V	e3			SILICON
BB178	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	32 V	125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified	38.5 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		32 V	e3			SILICON	13.5
BB179B,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V			TIN					18.22 pF				e3
BBY62T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY	.01 uA	2	28 V	SMALL OUTLINE	Varactors	30 V	85 Cel		MATTE TIN	R-PDSO-G4		CATHODE	Not Qualified	16.5 pF			30 V	e3			SILICON
BBY62	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY	.01 uA	2	28 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	MATTE TIN	R-PDSO-G4		CATHODE	Not Qualified	16.5 pF			30 V	e3			SILICON
BB178LX,315	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CHIP CARRIER	Varactors	32 V	125 Cel	-55 Cel	TIN	R-PBCC-N2			Not Qualified	38.5 pF		10 %		e3			SILICON	13.5
BB179/T3	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V	125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified	19.74 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		30 V	e3			SILICON	8.45
SP000010401	Infineon Technologies	VARIABLE CAPACITANCE DIODE
SP000743566	Infineon Technologies	VARIABLE CAPACITANCE DIODE
SD198E6553-E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V								30.1 pF
SD198E6553-E6377	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V								30.1 pF
SD197E6552-E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V								15 pF
SP000743550	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-F2				5.3 pF		9.43 %	6 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.8
SD197E6552-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V								15 pF
SP000743556	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				18.6 pF		5.66 %	16 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
BB640E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	35 V				R-PDSO-G2			Not Qualified	69 pF					NOT SPECIFIED	NOT SPECIFIED	SILICON	19.5
BBY34C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	400	CERAMIC, METAL-SEALED COFIRED	SINGLE	HYPERABRUPT			1		MICROWAVE						O-CEMW-N2			Not Qualified	3.4 pF			22 V				SILICON	4.3
BB659C-H7903	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	30 V					1			39 pF						260
BB814	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT			2		SMALL OUTLINE	Varactors	18 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1		Not Qualified	44.75 pF	CAPACITANCE MATCHED TO 3%	3.91 %	18 V	e3			SILICON	2.05
BB833E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		S BAND		1		SMALL OUTLINE	Varactors	35 V				R-PDSO-G2	1		Not Qualified	9.3 pF		8.11 %	35 V			260	SILICON	11
BB867-02V-E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	30 V								8.7 pF
BB659-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	30 V								38.3 pF
BBY27S2	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES		200									Varactors	140 V								38 pF
BB565	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1		Not Qualified	20 pF	LOW INDUCTANCE	7.5 %					SILICON	6.3
BB664	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2	1		Not Qualified	41.8 pF		6.59 %	30 V				SILICON	11
BB664-E7912	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V								41.8 pF
BB619C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			Not Qualified	39 pF	2.5% MATCHED SETS ARE AVAILABLE		35 V				SILICON	13.5
BB914E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	18 V			MATTE TIN	R-PDSO-G3	1		Not Qualified	43.75 pF	1.5% MATCHED SETS AVAILABLE	2.86 %	18 V	e3		260	SILICON	2.28
BB689-H7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V			MATTE TIN		1			56.5 pF				e3		260
BB669E7904XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2				56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %					SILICON	14.5
BB204B-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-XBCY-T3			Not Qualified				32 V				SILICON	2.55
BB659-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	30 V								38.3 pF
BB831E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		L BAND		1		SMALL OUTLINE			125 Cel	-55 Cel	MATTE TIN	R-PDSO-G2				8.8 pF	CAPACITANCE MATCHED TO 3%	11.36 %		e3			SILICON	7.8
BB545	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	150 Cel	-55 Cel		R-PDSO-G2	1		Not Qualified	20 pF	LOW INDUCTANCE	7.5 %					SILICON	6.3
BB439	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	280	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	28 V			TIN	R-PDSO-G2	1		Not Qualified	43 pF	CAPACITANCE MATCHED TO 3%		28 V	e3			SILICON	5
BB689	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2	1		Not Qualified	56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %					SILICON	14.5
BB659-E7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V					1			38.3 pF						260
BB837E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		S BAND		1		SMALL OUTLINE	Varactors	35 V			MATTE TIN	R-PDSO-G2	1		Not Qualified	6.6 pF				e3		260	SILICON	9.7
BB689-H7908	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V			MATTE TIN		1			56.5 pF				e3		260
BB669-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V			MATTE TIN		1			56.5 pF				e3
BB664E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2			Not Qualified	41.8 pF		6.59 %	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	11
BB857-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT		.2 uA	1	30 V	SMALL OUTLINE		35 V	150 Cel	-55 Cel		R-PDSO-F2				6.6 pF					NOT SPECIFIED	NOT SPECIFIED	SILICON	9.7
BB640	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V	150 Cel	-55 Cel	TIN	R-PDSO-G2	1		Not Qualified	69 pF		10.14 %		e3			SILICON	15
BB565H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				20 pF	LOW INDUCTANCE	7.5 %					SILICON	6.3
BB659C-02VE7912	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	30 V					1			39 pF						260

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.