VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

BB669E7906

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

56.5 pF

BB644E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-G2

Not Qualified

41.8 pF

6.59 %

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

11

BB659C-02V-H7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

1

39 pF

260

BB609A

Infineon Technologies

VARIABLE CAPACITANCE DIODE

NO

Varactors

30 V

Tin/Lead (Sn/Pb)

32 pF

e0

BB664H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

41.8 pF

6.59 %

30 V

SILICON

11

BB565-E7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

20 pF

BB831-E6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

8.8 pF

BB545-E7904

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

150 Cel

-55 Cel

1

20 pF

260

BB669-E6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

MATTE TIN

1

56.5 pF

e3

BB804SF2E6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BB545E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-G2

Not Qualified

20 pF

NOT SPECIFIED

NOT SPECIFIED

SILICON

9

BB804SF1-E6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

18 V

43.75 pF

BB565-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

20 pF

BB831E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

8.8 pF

BB204G-TO-92C

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

UNSPECIFIED

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

O-XBCY-T3

Not Qualified

32 V

SILICON

2.55

BB535E6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-G2

Not Qualified

18.7 pF

NOT SPECIFIED

NOT SPECIFIED

SILICON

8.2

BB669

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-G2

1

Not Qualified

56.5 pF

CAPACITANCE MATCHED TO 2%

9.33 %

SILICON

14.5

BB689-E7903

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1

56.5 pF

260

BB664-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

R-PDSO-F2

Not Qualified

41.8 pF

6.59 %

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

11

BB804-SF2

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

Matte Tin (Sn)

R-PDSO-G3

1

Not Qualified

18 V

e3

SILICON

1.65

BB804SF3-E6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

18 V

45.75 pF

BB689-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

MATTE TIN

1

56.5 pF

e3

BB833E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND

1

SMALL OUTLINE

Varactors

35 V

Matte Tin (Sn)

R-PDSO-G2

1

Not Qualified

9.3 pF

8.11 %

35 V

e3

40

260

SILICON

11

BB640E6327XT

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BB659CE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

39 pF

BB669E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

56.5 pF

CAPACITANCE MATCHED TO 2%

9.33 %

SILICON

14.5

BB659C-02VE6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

39 pF

BB204G-TO-92D

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

UNSPECIFIED

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

O-XBCY-T3

Not Qualified

32 V

SILICON

2.55

BB659C-02VE7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

1

39 pF

260

BB804SF1-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

18 V

1

43.75 pF

260

BB204B-TO-92B

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

UNSPECIFIED

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

O-XBCY-T3

Not Qualified

32 V

SILICON

2.55

BBY56-02W-H6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

10 V

MATTE TIN

1

40 pF

e3

260

BBY55-02WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

16 V

MATTE TIN

R-PDSO-F2

1

Not Qualified

18.6 pF

5.66 %

16 V

e3

260

SILICON

2

BBY51-02W

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

7 V

R-PDSO-F2

1

Not Qualified

5.4 pF

LOW INDUCTANCE

6.48 %

7 V

SILICON

1.55

BBY55-02WE6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

16 V

R-PDSO-F2

Not Qualified

18.6 pF

5.66 %

16 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2

BBY57-02LE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

10 V

17.5 pF

BBY51-02WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

7 V

MATTE TIN

R-PDSO-F2

1

Not Qualified

5.4 pF

6.48 %

7 V

e3

260

SILICON

1.55

BBY53-05W-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

6 V

1

5.3 pF

260

BBY52-02L-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

7 V

1

1.85 pF

260

BBY57-02W

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

10 V

MATTE TIN

R-PDSO-F2

1

Not Qualified

17.5 pF

LOW INDUCTANCE

5.98 %

10 V

e3

SILICON

3

BBY58-02V-H6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

10 V

MATTE TIN

1

18.3 pF

e3

260

BBY5503WE6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-G2

1

18.6 pF

LOW INDUCTANCE

5.66 %

16 V

e3

SILICON

2

BBY6605WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HYPERABRUPT

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-G3

1

68.7 pF

HIGH Q

4 %

12 V

e3

SILICON

5

BB555-E7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1

18.7 pF

260

BBY53-03L

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CHIP CARRIER

MATTE TIN

R-PBCC-N3

Not Qualified

5.3 pF

9.43 %

6 V

e3

SILICON

1.8

BBY66-05E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

12 V

68.7 pF

260

BBY51-02WE6433

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

7 V

R-PDSO-F2

Not Qualified

5.4 pF

6.48 %

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.55

BBY5103WE6327XT

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G2

5.4 pF

6.48 %

7 V

SILICON

1.55

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.