VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BBY66-02V-H6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES										Varactors				MATTE TIN		1		68.7 pF				e3		260
BBY58-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	10 V			TIN	R-PDSO-F2	1	Not Qualified	18.3 pF		4.89 %	10 V	e3			SILICON	1.15
BBY5502WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			18.6 pF	LOW INDUCTANCE	5.66 %	16 V				SILICON	2
BBY58-02W-H6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES										Varactors	10 V			MATTE TIN		1		18.3 pF				e3		260
BBY59-02VE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	15 V			MATTE TIN	R-PDSO-F2		Not Qualified	27.8 pF		4.32 %	15 V	e3			SILICON	3.4
BBY59-02VE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	15 V			MATTE TIN	R-PDSO-F2	1	Not Qualified	27.8 pF		4.32 %	15 V	e3		260	SILICON	3.4
BB555-02V-H7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES										Varactors	35 V			MATTE TIN		1		18.7 pF				e3		260
BBY51-02LE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	SINGLE	HYPERABRUPT			1		CHIP CARRIER	Varactors	7 V			MATTE TIN	R-XBCC-N2		Not Qualified	5.4 pF		6.48 %	7 V	e3		260	SILICON	1.55
BBY52-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE	Varactors	7 V				R-PDSO-G3	1	Not Qualified	1.85 pF	HIGH Q	22.22 %	7 V				SILICON	1.1
BBY52E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE						R-PDSO-G3		Not Qualified	1.85 pF			7 V				SILICON	1.1
BBY51-03WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	7 V			MATTE TIN	R-PDSO-G2	1	Not Qualified	5.4 pF		6.48 %	7 V	e3		260	SILICON	1.55
BBY53-02L	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	SINGLE	HYPERABRUPT			1		CHIP CARRIER	Varactors	6 V	125 Cel	-55 Cel		R-XBCC-N2		Not Qualified	5.3 pF		9.43 %	6 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.8
BBY66-05W-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES										Varactors						1		68.7 pF						260
BBY55-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE	Varactors	16 V				R-PDSO-G3	1	Not Qualified	15 pF	HIGH Q, LOW INDUCTANCE	6.67 %	16 V				SILICON	2
BBY58-06W-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES										Varactors	10 V					1		18.3 pF						260
BBY58-06W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE	Varactors	10 V				R-PDSO-G3	1	Not Qualified	18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY66-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors				TIN	R-PDSO-F2	1	Not Qualified	68.7 pF		4 %	12 V	e3			SILICON	5
BB555-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2	1	Not Qualified	18.7 pF	LOW INDUCTANCE	6.67 %	30 V				SILICON	6
BBY52-02L	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	SINGLE	HYPERABRUPT			1		CHIP CARRIER	Varactors	7 V				R-XBCC-N2		Not Qualified	1.85 pF		22.22 %	7 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.1
BBY56-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY	.005 uA	1	6 V	SMALL OUTLINE		10 V	150 Cel	-55 Cel		R-PDSO-F2			40 pF					NOT SPECIFIED	NOT SPECIFIED	SILICON	2.15
BBY66-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE	Varactors	12 V				R-PDSO-G3	1	Not Qualified	68.7 pF	HIGH Q	4 %	12 V				SILICON	5
BB555-02V-H7912	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES										Varactors	35 V					1		18.7 pF						260
BB555-E7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES										Varactors	35 V					1		18.7 pF						260
BBY53E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE	Varactors	6 V				R-PDSO-G3		Not Qualified	5.3 pF			6 V				SILICON	1.8
BBY65-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	15 V			TIN	R-PDSO-F2	1	Not Qualified	29.5 pF		4.41 %	15 V	e3			SILICON	10
BBY53-03LRHE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES										Varactors	6 V							5.3 pF						260
BBY55-03WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	16 V				R-PDSO-G2	1	Not Qualified	18.6 pF		5.66 %	16 V			260	SILICON	2
BBY66-05	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE	Varactors	12 V				R-PDSO-G3	1	Not Qualified	68.7 pF		4 %	12 V				SILICON	5
BBY65-02V-H6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES				HYPERABRUPT					SMALL OUTLINE	Varactors	15 V			MATTE TIN		1		29.5 pF				e3		260
BB844-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES										Varactors	18 V					1		43.75 pF						260
BBY57-02V-H6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES				HYPERABRUPT					SMALL OUTLINE	Varactors	10 V			MATTE TIN		1		17.5 pF				e3		260
BBY66-05-E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES										Varactors								68.7 pF
BBY66-05W-6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES										Varactors	12 V							68.7 pF
BBY55-03WE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	16 V				R-PDSO-G2		Not Qualified	18.6 pF		5.66 %	16 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
BBY5802WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY5202LE6816XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	SINGLE	HYPERABRUPT			1		CHIP CARRIER			150 Cel	-55 Cel		R-XBCC-N2			1.85 pF		22.22 %	7 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.1
BBY5705WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE
BBY51-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	.01 uA	1	6 V	SMALL OUTLINE		7 V	125 Cel	-55 Cel		R-PDSO-F2			5.4 pF					NOT SPECIFIED	NOT SPECIFIED	SILICON	1.55
BBY55-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	16 V			Matte Tin (Sn)	R-PDSO-F2	1	Not Qualified	18.6 pF		5.66 %	16 V	e3			SILICON	2
BBY51-07	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE	Varactors	7 V			TIN LEAD	R-PDSO-G4		Not Qualified	5.3 pF		11.11 %	7 V	e0			SILICON	1.55
BBY53E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE	Varactors	6 V			MATTE TIN	R-PDSO-G3	1	Not Qualified	5.3 pF			6 V	e3		260	SILICON	1.8
BBY5805WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3			18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY5303LRHE6817XTMA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE
BBY53-02W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel		R-PDSO-F2	1	Not Qualified	5.3 pF		9.43 %	6 V				SILICON	1.8
BBY52	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE	Varactors	6 V				R-PDSO-G3		Not Qualified	1.85 pF		22.22 %	7 V				SILICON	1.1
BBY51-03W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	7 V				R-PDSO-G2	1	Not Qualified	5.4 pF		6.48 %	7 V				SILICON	1.55
BBY58-05W-E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES										Varactors	10 V							18.3 pF
BBY53-02VE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES										Varactors	6 V					1		5.3 pF						260

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.