VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
SVC342L	Onsemi	VARIABLE CAPACITANCE DIODE				NO		200									Varactors	16 V									461 pF
1N5449	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	27 pF		DO-7	20 %	30 V	e0			SILICON	2.6
MV409	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL	Varactors	20 V	125 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.225 W	29 pF	HIGH RELIABILITY	TO-92	10.34 %	20 V	e0			SILICON	1.5
1N4799	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	15 V	LONG FORM	Varactors	15 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	82 pF		DO-7	20 %	17 V	e0			SILICON	2.26
MV2105RLRE	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0			SILICON	2.5
SVC211SPA	Onsemi	VARIABLE CAPACITANCE DIODE				NO		100									Varactors	32 V									42 pF
MV1405	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	GLASS	SINGLE	HYPERABRUPT			1		LONG FORM						O-LALF-W2		ISOLATED	Not Qualified	.4 W	250 pF		DO-204AA	20 %	12 V				SILICON	10
MV2101	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	6.8 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	30 V	e0		235	SILICON	2.5
MMBV2103L	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V	150 Cel		TIN LEAD	R-PDSO-G3			Not Qualified	.225 W	10 pF	HIGH RELIABILITY	TO-236AB	10 %	30 V	e0			SILICON	2.5
MV2109RL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	33 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	30 V	e0			SILICON	2.5
SVC353R	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 3 ELEMENTS				3		SMALL OUTLINE	Varactors	16 V				R-PDSO-G6			Not Qualified					3.26 %	16 V				SILICON	17.5
SVC387S	Onsemi	VARIABLE CAPACITANCE DIODE				YES		200									Varactors	16 V									55 pF
1N4808	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	65 V	LONG FORM	Varactors	65 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	27 pF		DO-7	20 %	72 V	e0			SILICON	2.35
SVC342K	Onsemi	VARIABLE CAPACITANCE DIODE				NO		200									Varactors	16 V									439 pF
1N5467	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	20 pF		DO-7	20 %	30 V	e0			SILICON	2.9
MV1403	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	GLASS	SINGLE	HYPERABRUPT			1		LONG FORM						O-LALF-W2		ISOLATED	Not Qualified	.4 W	175 pF		DO-204AA	20 %	12 V				SILICON	10
MMVL109T1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G2	1		Not Qualified	.2 W	29 pF	HIGH RELIABILITY		10.34 %	30 V	e3	30	260	SILICON	5
LV2205RL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	15 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	25 V	e0			SILICON	2.5
1N5463	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	550	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	10 pF		DO-7	20 %	30 V	e0			SILICON	2.8
1N5445	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	400	GLASS	SINGLE	ABRUPT		.02 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	15 pF		DO-7	20 %	30 V	e0			SILICON	2.6
MV2109ZL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	33 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	30 V	e0			SILICON	2.5
MMBV105GLT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	150 Cel	-55 Cel	TIN	R-PDSO-G3	1		Not Qualified	.225 W	2.15 pF	HIGH RELIABILITY	TO-236AB	30.23 %	30 V	e3	30	260	SILICON	4
MV104G	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT			2		CYLINDRICAL	Varactors	32 V			TIN SILVER COPPER	O-PBCY-T3			Not Qualified	.28 W	39.5 pF	1% MATCHING GUARANTEED	TO-92	6.33 %	32 V	e1		260	SILICON	2.5
MV2109RLRAG	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN SILVER COPPER	O-PBCY-T2			Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e1		260	SILICON	2.5
1N5699	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	400	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	12 pF		DO-7	20 %	65 V	e0			SILICON	2.8
1N5706	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	300	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	47 pF		DO-7	20 %	65 V	e0			SILICON	3.2
MV2105RLRM	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0			SILICON	2.5
MV1650	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE				1		LONG FORM			200 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	100 pF		DO-204AA	10 %	20 V	e0			SILICON	2
MMBV2103LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN LEAD	R-PDSO-G3	1		Not Qualified	.225 W	10 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0		235	SILICON	2.5
MV2105RL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	15 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	30 V	e0			SILICON	2.5
SVD101	Onsemi	VARIABLE CAPACITANCE DIODE	UNSPECIFIED	FLAT	2	YES	UNSPECIFIED		UNSPECIFIED	SINGLE	HYPERABRUPT	X BAND		1		MICROWAVE	Varactors	30 V				X-XXMW-F2			Not Qualified	.2 W	1.3 pF				27 V				GALLIUM ARSENIDE	5
MV1638	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE				1		LONG FORM					TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	33 pF		DO-204AA	10 %	20 V	e0			SILICON	2
1N5695	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	100 pF		DO-7	20 %	45 V	e0			SILICON	3.3
MBV109LT1	Onsemi	VARIABLE CAPACITANCE DIODE				YES		200									Varactors	30 V									29 pF
MMVL809T1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			TIN	R-PDSO-G2	1		Not Qualified	.2 W	5.3 pF	HIGH RELIABILITY		15.09 %	20 V	e3	30	260	SILICON	1.8
SVC355	Onsemi	VARIABLE CAPACITANCE DIODE				NO											Varactors	16 V									27 pF
SVC342	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	3	NO	ROUND	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL	Varactors	16 V				O-PBCY-W3			Not Qualified		503 pF		TO-92		16 V				SILICON	19.5
1N5704	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	33 pF		DO-7	20 %	65 V	e0			SILICON	3.2
SVC270-TL-E	Onsemi	VARIABLE CAPACITANCE DIODE																			TIN BISMUTH		1									e6	30	260	SILICON
1N5685	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	550	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	15 pF		DO-7	20 %	45 V	e0			SILICON	3.2
1N4802	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	100 V	LONG FORM	Varactors	100 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	8.2 pF		DO-7	20 %	110 V	e0			SILICON	2.42
SVC325	Onsemi	VARIABLE CAPACITANCE DIODE				YES		200									Varactors	16 V									52 pF
SVC354S	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMPLEX				3		SMALL OUTLINE	Varactors	16 V				R-PDSO-G6			Not Qualified					3.31 %	16 V				SILICON	17.5
SVC353S	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 3 ELEMENTS				3		SMALL OUTLINE	Varactors	16 V				R-PDSO-G6			Not Qualified					3.31 %	16 V				SILICON	17.5
1N5710	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	150	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	100 pF		DO-7	20 %	65 V	e0			SILICON	3.2
1N5448	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	22 pF		DO-7	20 %	30 V	e0			SILICON	2.6
1N5455	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	175	GLASS	SINGLE	ABRUPT		.02 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	82 pF		DO-7	20 %	30 V	e0			SILICON	2.7
MV2105G	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V	150 Cel		TIN SILVER COPPER	O-PBCY-T2			Not Qualified	.28 W	15 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	30 V	e1		260	SILICON	2.5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.