2 Varactor Diodes 1,608

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

UZMV834BTA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

.33 W

47 pF

LOW NOISE

5 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

UZMV830ATC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

.33 W

10 pF

LOW NOISE

10 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.5

ZMV833B

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

25 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

33 pF

5 %

25 V

e3

30

260

SILICON

5

ZC825N

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

MATTE TIN

R-PSIP-W2

Not Qualified

.3 W

68 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZC821

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

2

NO

ROUND

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.3 W

15 pF

20 %

25 V

SILICON

5

ZMV831ATC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

25 V

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

15 pF

LOW NOISE

10 %

25 V

e3

30

260

SILICON

4.5

UZV931V2TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

125 Cel

R-PDSO-F2

Not Qualified

.25 W

7.15 pF

LOW NOISE

9.09 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

UZMV835BTA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

.33 W

68 pF

LOW NOISE

5 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZMV831

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

25 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

15 pF

20 %

25 V

e3

30

260

SILICON

4.5

UZMV934TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

80

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

.33 W

52.5 pF

LOW NOISE

23.81 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ZV932V2TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

125 Cel

R-PDSO-F2

Not Qualified

.25 W

9.5 pF

LOW NOISE

10.53 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ZMV831BTC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

25 V

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

15 pF

LOW NOISE

5 %

25 V

e3

30

260

SILICON

4.5

UZMV833B

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.33 W

33 pF

5 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZMV933TA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

150

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

12 V

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

22.5 pF

LOW NOISE

20 %

12 V

e3

30

260

SILICON

ZC822BM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

22 pF

5 %

SILICON

5

UZMV934ATA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

80

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

.33 W

LOW NOISE

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

UZMV834A

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.33 W

47 pF

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

UZMV930TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

.33 W

4.9 pF

LOW NOISE

12.24 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

UZMV832ATA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

.33 W

22 pF

LOW NOISE

10 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZMV831ATA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

25 V

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

15 pF

LOW NOISE

10 %

25 V

e3

30

260

SILICON

4.5

ZC824AN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

47 pF

10 %

SILICON

5

UZMV934A

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

80

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

.33 W

95 pF

HIGH RELIABILITY, LOW LEAKAGE CURRENT

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ZC820BM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

10 pF

5 %

SILICON

4.5

ZC823M

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

MATTE TIN

R-PSIP-W2

Not Qualified

.3 W

33 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

UZMV933TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

150

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

.33 W

22.5 pF

LOW NOISE

20 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

UZMV835A

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.33 W

68 pF

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

UZMV932TA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

.33 W

9.5 pF

LOW NOISE

10.53 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

UZMV829A

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.33 W

8.2 pF

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.3

UZMV829B

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.33 W

8.2 pF

5 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.3

ZMV832

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

25 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

22 pF

20 %

25 V

e3

30

260

SILICON

5

ZC824BN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

47 pF

5 %

SILICON

5

ZC820AM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

10 pF

10 %

SILICON

4.5

UZMV830B

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.33 W

10 pF

5 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.5

ZC826M

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

MATTE TIN

R-PSIP-W2

Not Qualified

.3 W

100 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZMV931TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

.33 W

7.15 pF

LOW NOISE

9.09 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ZMV829

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

25 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

8.2 pF

20 %

25 V

e3

30

260

SILICON

4.3

UZMV833BTC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

.33 W

33 pF

LOW NOISE

5 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZC825M

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

MATTE TIN

R-PSIP-W2

Not Qualified

.3 W

68 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZMV833A

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

25 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

33 pF

25 V

e3

30

260

SILICON

5

ZC823BM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

33 pF

5 %

SILICON

5

UZMV830BTA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

.33 W

10 pF

LOW NOISE

5 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.5

ZMV833BTC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

25 V

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

33 pF

LOW NOISE

5 %

25 V

e3

30

260

SILICON

5

UZV950V2TA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

85 Cel

-55 Cel

R-PDSO-F2

Not Qualified

.25 W

7.05 pF

10.64 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2

ZMV835TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.33 W

68 pF

20 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZC823AN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

33 pF

10 %

SILICON

5

UZMV831A

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.33 W

15 pF

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.5

ZMV833ATC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

25 V

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

33 pF

LOW NOISE

10 %

25 V

e3

30

260

SILICON

5

ZMV835

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

25 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

68 pF

20 %

25 V

e3

30

260

SILICON

5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.