2 Varactor Diodes 1,608

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
UZMV832B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2		Not Qualified	.33 W	22 pF		5 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC822B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	22 pF		5 %	25 V				SILICON	5
ZMV934TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	80	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	.33 W	52.5 pF	LOW NOISE	23.81 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
UZMV831BTC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE						R-PDSO-G2		Not Qualified	.33 W	15 pF	LOW NOISE	5 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.5
UZV832BV2TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE						R-PDSO-F2		Not Qualified	.25 W	22 pF	LOW NOISE	5 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC826AN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	100 pF		10 %					SILICON	5
ZC826B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	100 pF		5 %	25 V				SILICON	5
ZMV930TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	.33 W	4.9 pF	LOW NOISE	12.24 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ZMV831B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	25 V	150 Cel	-55 Cel	MATTE TIN	R-PDSO-G2	1	Not Qualified	.33 W	15 pF		5 %	25 V	e3	30	260	SILICON	4.5
1SV216TPH2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified					30 V				SILICON	2.5
ISV215	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY							SMALL OUTLINE					TIN LEAD	R-PDSO-G2		Not Qualified		26 pF			30 V	e0			SILICON
1SV214TPHR2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified			SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE		30 V				SILICON	5.9
JDV2S38SC	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER			150 Cel			R-XBCC-N2				7.37 pF		5.02 %	10 V				SILICON	2.38
JDV2S41FS	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel			R-PDSO-F2		Not Qualified		15 pF		6.67 %	15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.5
1SV256	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G2		Not Qualified		14 pF							SILICON	2.5
ISV239	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY							SMALL OUTLINE					TIN LEAD	R-PDSO-G2		Not Qualified		3.8 pF			15 V	e0			SILICON
1SV302	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE			.01 uA	1	32 V	SMALL OUTLINE	Varactors	35 V	125 Cel		TIN LEAD	R-PDSO-G2		Not Qualified		47 pF	2.5% MATCHED GROUP AVAILABLE	9.68 %	30 V	e0			SILICON	17
JDV2S05S	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	150 Cel		TIN LEAD	R-XDSO-F2		Not Qualified		4.2 pF		8.33 %	10 V	e0			SILICON	1.7
1SV230	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE			.01 uA	1	28 V	SMALL OUTLINE	Varactors	35 V	125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-G2		Not Qualified		15 pF		7.33 %	30 V	e0			SILICON	7.1
1SV276	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	.003 uA	1	10 V	SMALL OUTLINE	Varactors	10 V	125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-G2		Not Qualified		16 pF		6.25 %	10 V	e0			SILICON	1.8
1SV279,H3F(T	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.003 uA	1	15 V	SMALL OUTLINE		15 V	125 Cel			R-PDSO-F2				15 pF		6.67 %	15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
JDV2S25FS	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	150 Cel			R-PDSO-F2		Not Qualified				3.19 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	2.77
ISV224	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE						R-PDIP-T2		Not Qualified		15 pF			30 V				SILICON
1SV238	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE						R-PDSO-G2		Not Qualified		35 pF							SILICON	10.7
1SV245	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY TO KA BAND	.01 uA	1	28 V	SMALL OUTLINE	Varactors	35 V	125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-G2		Not Qualified		3.93 pF	CAPACITANCE MATCHED TO 6%, SMALL TRACKING ERROR	15.78 %	30 V	e0			SILICON	5
1SV330	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	10 V	125 Cel		TIN LEAD	R-PDSO-G2		Not Qualified		18 pF		5.56 %		e0			SILICON	3.5
1SV325	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	10 V	125 Cel			R-PDSO-F2		Not Qualified		46.75 pF		5.88 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	4
JDV2S36E(TH3APN,F)	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel			R-PDSO-F2				46.75 pF		5.88 %	10 V				SILICON	6.3
JDV2S27SC	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER	Varactors	10 V	150 Cel			R-XBCC-N2		Not Qualified				3.03 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	2.81
1SV287	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY TO KA BAND	.01 uA	1	28 V	SMALL OUTLINE	Varactors	35 V	125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-G2		Not Qualified		4.95 pF	6% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR	15.15 %	30 V	e0			SILICON	7.3
1SV309	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY TO KA BAND		1		SMALL OUTLINE	Varactors	35 V	125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-F2		Not Qualified		3.93 pF		15.78 %	30 V	e0			SILICON	5
1SV329	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	125 Cel		TIN LEAD	R-PDSO-F2		Not Qualified		6.2 pF		8.06 %		e0			SILICON	2.7
1SV231(TPH3)	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified		45 pF	SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE		30 V				SILICON	14
1SV239TPHR2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.003 uA	1	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified		4.25 pF			15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
ISV238	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY							SMALL OUTLINE						R-PDSO-G2		Not Qualified		31 pF			30 V				SILICON
JDV2S06S	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V			Tin/Lead (Sn/Pb)	R-PDSO-F2		Not Qualified		16 pF		6.25 %		e0			SILICON	1.8
1SV230(TPH3)	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified		15 pF			30 V				SILICON	7.1
ISV257	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY							SMALL OUTLINE					TIN LEAD	R-PDSO-G2		Not Qualified		14 pF			15 V	e0			SILICON
1SV314(TPH3)	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-F2				7.85 pF		7.01 %		e0			SILICON	2.4
1SV238TPHR2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified		35 pF	SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE		30 V				SILICON	10.7
1SV311	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	125 Cel			R-PDSO-F2		Not Qualified		10.4 pF		6.73 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	1.8
1SV215TPH3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified			SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE		30 V				SILICON	9.5
1SV245TPHR2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified			6% MATCHED SETS ARE AVAILABLE, SMALL TRACKING ERROR		30 V				SILICON	5
JDV2S10S	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	150 Cel		Tin/Lead (Sn/Pb)	R-PDSO-F2		Not Qualified		7.8 pF		7 %	10 V	e0			SILICON	2.4
JDV2S40FS	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel			R-PDSO-F2				4.35 pF		8.05 %					SILICON	2.3
ISV262	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY							SMALL OUTLINE					TIN LEAD	R-PDSO-G2		Not Qualified		33 pF			34 V	e0			SILICON
1SV231TPHR3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified		45 pF	SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE		30 V				SILICON	14
1SV161	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-F2		Not Qualified			SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE		30 V	e0			SILICON	9.5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.