Toshiba - JDV2S36E(TH3APN,F)

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JDV2S36E(TH3APN,F) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number JDV2S36E(TH3APN,F)
Description VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet JDV2S36E(TH3APN,F) Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Variable Capacitance Diode Classification: ABRUPT
Config: SINGLE
Diode Type: VARIABLE CAPACITANCE DIODE
Frequency Band: VERY HIGH FREQUENCY
Diode Cap Tolerance: 5.88 %
Surface Mount: YES
Nominal Diode Capacitance: 46.75 pF
Diode Element Material: SILICON
No. of Terminals: 2
Minimum Diode Capacitance Ratio: 6.3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F2
Minimum Breakdown Voltage: 10 V
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 125 Cel
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