DUAL Varactor Diodes 1,767

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

BBY31TA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

17.5 pF

LOW NOISE

21.73 %

28 V

SILICON

UZC933TA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

150

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

Matte Tin (Sn)

R-PDSO-G3

1

Not Qualified

.33 W

22.5 pF

LOW NOISE

20 %

12 V

e3

40

260

SILICON

3.5

ZC832TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

22 pF

LOW NOISE

20 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZMDC832BTC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HYPERABRUPT

2

SMALL OUTLINE

Varactors

25 V

MATTE TIN

R-PDSO-G3

1

Not Qualified

22 pF

LOW NOISE

5 %

25 V

e3

30

260

SILICON

5

FMMV105GTC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

MATTE TIN

R-PDSO-G3

1

Not Qualified

.33 W

LOW NOISE

21.73 %

30 V

e3

SILICON

4

ZMV930TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

.33 W

4.9 pF

LOW NOISE

12.24 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

UZC835BTA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Matte Tin (Sn)

R-PDSO-G3

1

Not Qualified

.33 W

68 pF

LOW NOISE

5 %

25 V

e3

40

260

SILICON

5

ZMV831B

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

25 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

15 pF

5 %

25 V

e3

30

260

SILICON

4.5

1SV216TPH2

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.01 uA

1

28 V

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

30 V

SILICON

2.5

ISV215

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SMALL OUTLINE

TIN LEAD

R-PDSO-G2

Not Qualified

26 pF

30 V

e0

SILICON

1SV214TPHR2

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.01 uA

1

28 V

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE

30 V

SILICON

5.9

1SV228-5TPHR6

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.01 uA

2

15 V

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

3% MATCHED SETS ARE AVAILABLE

15 V

NOT SPECIFIED

240

SILICON

2.1

JDV2S41FS

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-F2

Not Qualified

15 pF

6.67 %

15 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.5

1SV256

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

14 pF

SILICON

2.5

1SV160

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.0000001 uA

1

4 V

SMALL OUTLINE

Varactors

15 V

125 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

10.55 pF

33.33 %

15 V

e0

SILICON

1.2

ISV239

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SMALL OUTLINE

TIN LEAD

R-PDSO-G2

Not Qualified

3.8 pF

15 V

e0

SILICON

1SV302

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.01 uA

1

32 V

SMALL OUTLINE

Varactors

35 V

125 Cel

TIN LEAD

R-PDSO-G2

Not Qualified

47 pF

2.5% MATCHED GROUP AVAILABLE

9.68 %

30 V

e0

SILICON

17

JDV2S05S

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

150 Cel

TIN LEAD

R-XDSO-F2

Not Qualified

4.2 pF

8.33 %

10 V

e0

SILICON

1.7

1SV230

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.01 uA

1

28 V

SMALL OUTLINE

Varactors

35 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-G2

Not Qualified

15 pF

7.33 %

30 V

e0

SILICON

7.1

1SV276

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.003 uA

1

10 V

SMALL OUTLINE

Varactors

10 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-G2

Not Qualified

16 pF

6.25 %

10 V

e0

SILICON

1.8

1SV279,H3F(T

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.003 uA

1

15 V

SMALL OUTLINE

15 V

125 Cel

R-PDSO-F2

15 pF

6.67 %

15 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2

JDV2S25FS

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

150 Cel

R-PDSO-F2

Not Qualified

3.19 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.77

ISV224

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

THROUGH-HOLE

2

NO

RECTANGULAR

PLASTIC/EPOXY

IN-LINE

R-PDIP-T2

Not Qualified

15 pF

30 V

SILICON

1SV242TPHR4

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.01 uA

2

28 V

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

39 pF

SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE

30 V

SILICON

13.4

1SV238

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

35 pF

SILICON

10.7

1SV245

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY TO KA BAND

.01 uA

1

28 V

SMALL OUTLINE

Varactors

35 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-G2

Not Qualified

3.93 pF

CAPACITANCE MATCHED TO 6%, SMALL TRACKING ERROR

15.78 %

30 V

e0

SILICON

5

1SV330

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

TIN LEAD

R-PDSO-G2

Not Qualified

18 pF

5.56 %

e0

SILICON

3.5

1SV325

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

R-PDSO-F2

Not Qualified

46.75 pF

5.88 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

4

1SV228-5TPH6

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.01 uA

2

15 V

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

3% MATCHED SETS ARE AVAILABLE

15 V

NOT SPECIFIED

240

SILICON

2.1

ISV242

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

UNSPECIFIED

YES

RECTANGULAR

PLASTIC/EPOXY

SMALL OUTLINE

R-PDSO-X

Not Qualified

36 pF

30 V

NOT SPECIFIED

240

SILICON

JDV2S36E(TH3APN,F)

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-F2

46.75 pF

5.88 %

10 V

SILICON

6.3

HN1V01H

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

8

YES

RECTANGULAR

200

PLASTIC/EPOXY

2 BANKS, COMMON CATHODE, 2 ELEMENTS

.00000002 uA

4

16 V

SMALL OUTLINE

Signal Diodes

16 V

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

R-PDSO-G8

Not Qualified

CAPACITANCE MATCHED TO 2.5% FOR FOUR DEVICES

10.77 %

16 V

e0

SILICON

16.2

HN2V02H-B

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

8

YES

RECTANGULAR

200

PLASTIC/EPOXY

SEPARATE, 3 ELEMENTS

.02 uA

3

16 V

SMALL OUTLINE

Other Diodes

16 V

125 Cel

-55 Cel

R-PDSO-G8

Not Qualified

CAPACITANCE MATCHED TO 2.5% FOR THREE DEVICES

8.76 %

16 V

NOT SPECIFIED

240

SILICON

16.2

1SV287

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY TO KA BAND

.01 uA

1

28 V

SMALL OUTLINE

Varactors

35 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-G2

Not Qualified

4.95 pF

6% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR

15.15 %

30 V

e0

SILICON

7.3

JDV3C11

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

Varactors

20 V

125 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

6 %

e0

SILICON

5

1SV225TPH6

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.05 uA

2

30 V

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

19.7 pF

32 V

SILICON

2.6

1SV309

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY TO KA BAND

1

SMALL OUTLINE

Varactors

35 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-F2

Not Qualified

3.93 pF

15.78 %

30 V

e0

SILICON

5

1SV329

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

125 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

6.2 pF

8.06 %

e0

SILICON

2.7

1SV231(TPH3)

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

28 V

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

45 pF

SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE

30 V

SILICON

14

1SV160TPHR6

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.1 uA

1

4 V

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

15 V

SILICON

1.2

1SV239TPHR2

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.003 uA

1

15 V

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

4.25 pF

15 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2

ISV238

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SMALL OUTLINE

R-PDSO-G2

Not Qualified

31 pF

30 V

SILICON

1SV160TPH7

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.1 uA

1

4 V

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

15 V

SILICON

1.2

JDV2S06S

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

Tin/Lead (Sn/Pb)

R-PDSO-F2

Not Qualified

16 pF

6.25 %

e0

SILICON

1.8

1SV230(TPH3)

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.01 uA

1

28 V

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

15 pF

30 V

SILICON

7.1

ISV257

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SMALL OUTLINE

TIN LEAD

R-PDSO-G2

Not Qualified

14 pF

15 V

e0

SILICON

1SV314(TPH3)

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-F2

7.85 pF

7.01 %

e0

SILICON

2.4

1SV238TPHR2

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

28 V

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

35 pF

SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE

30 V

SILICON

10.7

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.