Varactor Diodes

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
MV7404T1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE					TIN LEAD	R-PDSO-G4		CATHODE	Not Qualified	.8 W	120 pF		TO-261AA	20 %	12 V	e0			SILICON	10
SVC220	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	16 V				R-PDSO-G3			Not Qualified		45.25 pF			2.76 %	16 V				SILICON	1.65
1N4812	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	40 V	LONG FORM	Varactors	40 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	56 pF		DO-7	20 %	44 V	e0			SILICON	2.32
SVC384	Onsemi	VARIABLE CAPACITANCE DIODE				NO		200									Varactors	33 V									64 pF
SVC270	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY	.05 uA	2	10 V	SMALL OUTLINE		16 V	150 Cel			R-PDSO-F3					45.25 pF			2.76 %	16 V				SILICON	1.65
MMBV109L	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel		TIN LEAD	R-PDSO-G3			Not Qualified	.2 W	29 pF		TO-236AB	10.34 %	30 V	e0			SILICON	5
MMBV2107L	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	350	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V			TIN LEAD	R-PDSO-G3			Not Qualified	.225 W	22 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0			SILICON	2.5
MV209G	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN SILVER COPPER	O-PBCY-T2			Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-226AC	10.34 %	30 V	e1		260	SILICON	5
SVC707	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		IN-LINE	Varactors	15 V	150 Cel			R-PSIP-T2			Not Qualified		19.92 pF			6.73 %	15 V				SILICON
SVC276	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	16 V	125 Cel			R-PDSO-F3			Not Qualified		76.75 pF			3.94 %	14 V				SILICON	3.1
1N4793	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	20 V	LONG FORM	Varactors	20 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	27 pF		DO-7	20 %	22 V	e0			SILICON	2.35
SVC272	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	3	YES	RECTANGULAR	150	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY	.05 uA	2	10 V	SMALL OUTLINE		16 V	125 Cel			R-PDSO-F3					47.365 pF			5.18 %	14 V				SILICON	2.3
SVD201	Onsemi	VARIABLE CAPACITANCE DIODE	UNSPECIFIED	FLAT	2	YES	UNSPECIFIED		UNSPECIFIED	SINGLE	HYPERABRUPT	X BAND		1		MICROWAVE	Varactors	30 V	150 Cel			X-XXMW-F2			Not Qualified	.2 W	1.9 pF				27 V				GALLIUM ARSENIDE	11
LV2205	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL	Varactors	30 V			TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	25 V	e0			SILICON	2.5
MMBV3102LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1		Not Qualified	.225 W	22 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	11.11 %	30 V	e0	30	235	SILICON	4.5
1N4810	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	55 V	LONG FORM	Varactors	55 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	39 pF		DO-7	20 %	61 V	e0			SILICON	2.34
1N5465	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	550	GLASS	SINGLE	ABRUPT		.02 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	15 pF		DO-7	20 %	30 V	e0			SILICON	2.8
1N5683	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	550	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	10 pF		DO-7	20 %	45 V	e0			SILICON	3.2
MMBV105GLT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1		Not Qualified	.225 W	2.15 pF	HIGH RELIABILITY	TO-236AB	30.23 %	30 V	e0	30	235	SILICON	4
MV209	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			Tin/Lead (Sn80Pb20)	O-PBCY-T2			Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-226AC	10.34 %	30 V	e0	30	235	SILICON	5
MV1626	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE				1		LONG FORM					TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	12 pF		DO-204AA	10 %	20 V	e0			SILICON	2
MMVL105GT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G2	1		Not Qualified	.2 W	2.15 pF	HIGH RELIABILITY		30.23 %	30 V	e3	30	260	SILICON	4
SVC710-TL-E	Onsemi	VARIABLE CAPACITANCE DIODE																			Tin/Bismuth (Sn/Bi)		1									e6			SILICON
1N5456	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	175	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	100 pF		DO-7	20 %	30 V	e0			SILICON	2.7
1N5452	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	250	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	47 pF		DO-7	20 %	30 V	e0			SILICON	2.6
MMVL105GT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G2	1		Not Qualified	.2 W	2.15 pF	HIGH RELIABILITY		30.23 %	30 V	e0	30	235	SILICON	4
SVC346	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL	Varactors	33 V				O-PBCY-T3			Not Qualified		64 pF		TO-92	8 %	33 V				SILICON	17.5
MMVL2105T1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE					TIN LEAD	R-PDSO-G2	1		Not Qualified	.2 W	15 pF	HIGH RELIABILITY		10 %	30 V	e0			SILICON	2.5
1N5469	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	27 pF		DO-7	20 %	30 V	e0			SILICON	2.9
1N5454	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	175	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	68 pF		DO-7	20 %	30 V	e0			SILICON	2.7
SVC203C	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	60	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY	.05 uA	2	10 V	SMALL OUTLINE		16 V	125 Cel			R-PDSO-G3					62.39 pF			5.75 %	16 V				SILICON	4.6
1N4798	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	15 V	LONG FORM	Varactors	15 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	68 pF		DO-7	20 %	17 V	e0			SILICON	2.3
SVC364K	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	200	PLASTIC/EPOXY	2 BANKS, COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	16 V				R-PDSO-G6			Not Qualified					3.22 %	16 V				SILICON	17.5
SVD102	Onsemi	VARIABLE CAPACITANCE DIODE	UNSPECIFIED	FLAT	2	YES	UNSPECIFIED		UNSPECIFIED	SINGLE	HYPERABRUPT	X BAND		1		MICROWAVE	Varactors	30 V	150 Cel			X-XXMW-F2			Not Qualified	.5 W	7 pF				27 V				GALLIUM ARSENIDE	5
1N4796	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	20 V	LONG FORM	Varactors	20 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	47 pF		DO-7	20 %	22 V	e0			SILICON	2.33
LV2205RL	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	15 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	25 V	e0			SILICON	2.5
1N5684	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	550	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	12 pF		DO-7	20 %	45 V	e0			SILICON	3.2
MMBV432LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY		2		SMALL OUTLINE	Varactors	14 V			TIN	R-PDSO-G3	1		Not Qualified	.225 W	45.55 pF	HIGH Q, 1% MATCHING GUARANTEED	TO-236AB	5.6 %	14 V	e3	30	260	SILICON	1.5
SVC707-AL	Onsemi	VARIABLE CAPACITANCE DIODE				NO											Varactors	15 V			Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)						19.9 pF					e2
1N5694	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	225	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	82 pF		DO-7	20 %	45 V	e0			SILICON	3.3
SVC384S	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	3	NO	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		IN-LINE	Varactors	33 V	125 Cel			R-PSIP-T3			Not Qualified					3.31 %	33 V				SILICON	17.5
1N5708	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	175	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	68 pF		DO-7	20 %	65 V	e0			SILICON	3.2
1N5148	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	GLASS	SINGLE				1		LONG FORM						O-LALF-W2		ISOLATED	Not Qualified	.4 W	47 pF		DO-204AA	10 %	60 V				SILICON	3.2
MV2108	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL	Varactors	30 V	150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	27 pF		TO-92	10 %	30 V	e0			SILICON	2.5
SVC211SP	Onsemi	VARIABLE CAPACITANCE DIODE				NO		100									Varactors	30 V									42 pF
LV2209ZL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	33 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	25 V	e0			SILICON	2.5
1N4809	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	60 V	LONG FORM	Varactors	60 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	33 pF		DO-7	20 %	66 V	e0			SILICON	2.35
SVC272-TL-E	Onsemi	VARIABLE CAPACITANCE DIODE																			TIN BISMUTH		1									e6	30	260	SILICON

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.