Part | RoHS | Manufacturer | Logic IC Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Schmitt Trigger | Surface Mount | No. of Functions | Technology | Screening Level | No. of Inputs | No. of Bits | Translation | Packing Method | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Load Capacitance (CL) | Package Style (Meter) | Package Equivalence Code | Propagation Delay (tpd) | Maximum I (ol) | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Minimum Operating Temperature | Terminal Finish | Terminal Position | Control Type | Minimum fmax | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Output Polarity | Minimum Supply Voltage (Vsup) | Maximum Power Supply Current (ICC) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Length | Family |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
NOR GATE |
MILITARY |
GULL WING |
8 |
LSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
2 |
TR |
5 |
5 |
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH |
TSSOP8,.1 |
9.5 ns |
8 Amp |
Gates |
.65 mm |
125 Cel |
-55 Cel |
TIN |
DUAL |
R-PDSO-G8 |
1 |
5.5 V |
1.45 mm |
1.625 mm |
Not Qualified |
4.5 V |
e3 |
260 |
2.9 mm |
74V |
|||||||||||||
|
STMicroelectronics |
AND-OR GATE |
FLAT |
16 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
NO |
YES |
4 |
CMOS |
5 |
FLATPACK |
FL16,.3 |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
R-CDFP-F16 |
15 V |
2.38 mm |
6.91 mm |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
9.94 mm |
HC |
||||||||||||||||||||||
STMicroelectronics |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
3/18 |
FLATPACK |
FL14,.3 |
Gates |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDFP-F14 |
Not Qualified |
||||||||||||||||||||||||||||||||
|
STMicroelectronics |
OR GATE |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, GLASS-SEALED |
NO |
NO |
2 |
CMOS |
4 |
IN-LINE |
DIP14,.3 |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-GDIP-T14 |
20 V |
3.7 mm |
7.62 mm |
3 V |
19 mm |
4000/14000/40000 |
||||||||||||||||||||||||
STMicroelectronics |
NAND GATE |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
50k Rad(Si) |
CERAMIC, GLASS-SEALED |
NO |
NO |
3 |
CMOS |
3 |
IN-LINE |
DIP14,.3 |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-GDIP-T14 |
6 V |
2.54 mm |
7.62 mm |
2 V |
19 mm |
HC |
|||||||||||||||||||||||||
|
STMicroelectronics |
OR GATE |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, GLASS-SEALED |
NO |
NO |
2 |
CMOS |
4 |
IN-LINE |
DIP14,.3 |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-GDIP-T14 |
20 V |
3.7 mm |
7.62 mm |
3 V |
19 mm |
4000/14000/40000 |
||||||||||||||||||||||||
STMicroelectronics |
AND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
50k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
NO |
NO |
3 |
CMOS |
ESCC9000 |
3 |
4.5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
130 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-CDIP-T14 |
6 V |
3.7 mm |
7.62 mm |
Not Qualified |
2 V |
e0 |
19 mm |
HC/UH |
||||||||||||||
STMicroelectronics |
||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
NAND GATE |
COMMERCIAL |
J BEND |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
3 |
TTL |
3 |
5 |
15 pF |
CHIP CARRIER |
28 ns |
1.27 mm |
70 Cel |
OPEN-COLLECTOR |
0 Cel |
QUAD |
S-PQCC-J20 |
5.25 V |
4.57 mm |
8.9662 mm |
Not Qualified |
4.75 V |
3.3 mA |
8.9662 mm |
LS |
|||||||||||||||||||||
STMicroelectronics |
NOR GATE |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
4 |
CMOS |
2 |
4.5 |
FLATPACK |
135 ns |
125 Cel |
-55 Cel |
DUAL |
R-CDFP-F14 |
6 V |
Not Qualified |
2 V |
HC/UH |
||||||||||||||||||||||||||||
STMicroelectronics |
XOR GATE |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
YES |
4 |
CMOS |
MIL-STD-883 |
2 |
4.5 |
2/6 |
50 pF |
FLATPACK |
FL14,.3 |
180 ns |
4 Amp |
Gates |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
R-CDFP-F14 |
6 V |
Not Qualified |
2 V |
HC/UH |
||||||||||||||||||||
|
STMicroelectronics |
NOR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
NO |
NO |
2 |
CMOS |
4 |
STRIP PACK |
5 |
IN-LINE |
DIP14,.3 |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-CDIP-T14 |
20 V |
3.7 mm |
7.62 mm |
3 V |
19 mm |
4000/14000/40000 |
|||||||||||||||||||||
STMicroelectronics |
AND GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
4 |
TTL |
2 |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
35 ns |
8 Amp |
Gates |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
8.8 mA |
e0 |
LS |
|||||||||||||||
|
STMicroelectronics |
OR GATE |
MILITARY |
GULL WING |
8 |
LSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
2 |
TR |
3.3 |
2/5.5 |
50 pF |
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH |
TSSOP8,.1 |
10.5 ns |
.05 Amp |
Gates |
.65 mm |
125 Cel |
-55 Cel |
TIN |
DUAL |
R-PDSO-G8 |
1 |
5.5 V |
1.45 mm |
1.625 mm |
Not Qualified |
2 V |
e3 |
260 |
2.9 mm |
74V |
||||||||||||
STMicroelectronics |
AND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
50k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
NO |
NO |
2 |
CMOS |
4 |
4.5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
150 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-CDIP-T14 |
6 V |
3.7 mm |
7.62 mm |
Not Qualified |
2 V |
e0 |
19 mm |
HC/UH |
|||||||||||||||
STMicroelectronics |
XNOR GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
4 |
TTL |
2 |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
30 ns |
8 Amp |
Gates |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
13 mA |
e0 |
LS |
|||||||||||||||
|
STMicroelectronics |
NAND GATE |
||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
INVERTER |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
TTL |
1 |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
15 ns |
8 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T14 |
5.25 V |
5.1 mm |
7.62 mm |
Not Qualified |
4.75 V |
6.6 mA |
e0 |
LS |
||||||||||||||||
STMicroelectronics |
AND GATE |
COMMERCIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
2 |
TTL |
4 |
5 |
5 |
15 pF |
SMALL OUTLINE |
SOP14,.25 |
20 ns |
8 Amp |
Gates |
1.27 mm |
70 Cel |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G14 |
5.25 V |
1.75 mm |
3.9 mm |
Not Qualified |
4.75 V |
4.4 mA |
e0 |
8.65 mm |
LS |
|||||||||||||||
STMicroelectronics |
XOR GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
4 |
TTL |
2 |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
22 ns |
8 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
10 mA |
e0 |
LS |
||||||||||||||||
STMicroelectronics |
AND-OR-INVERT GATE |
COMMERCIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
2 |
TTL |
6 |
5 |
5 |
15 pF |
SMALL OUTLINE |
SOP14,.25 |
20 ns |
8 Amp |
Gates |
1.27 mm |
70 Cel |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G14 |
5.25 V |
1.75 mm |
3.9 mm |
Not Qualified |
4.75 V |
2.8 mA |
ASYMMETRICAL I/P'S |
e0 |
8.65 mm |
LS |
||||||||||||||
STMicroelectronics |
NAND GATE |
FLAT |
14 |
DFP |
RECTANGULAR |
50k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
NO |
YES |
3 |
CMOS |
3 |
FLATPACK |
FL14,.3 |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
R-CDFP-F14 |
6 V |
2.33 mm |
6.91 mm |
2 V |
9.95 mm |
HC |
|||||||||||||||||||||||||
STMicroelectronics |
NAND GATE |
COMMERCIAL |
J BEND |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
4 |
TTL |
2 |
5 |
45 pF |
CHIP CARRIER |
24 ns |
1.27 mm |
70 Cel |
0 Cel |
QUAD |
S-PQCC-J20 |
5.25 V |
4.57 mm |
8.9662 mm |
Not Qualified |
4.75 V |
12 mA |
8.9662 mm |
LS |
||||||||||||||||||||||
STMicroelectronics |
NOR GATE |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
50k Rad(Si) |
CERAMIC, GLASS-SEALED |
NO |
NO |
3 |
CMOS |
3 |
IN-LINE |
DIP14,.3 |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-GDIP-T14 |
6 V |
2.54 mm |
7.62 mm |
2 V |
19 mm |
HC |
|||||||||||||||||||||||||
STMicroelectronics |
AND GATE |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
50k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
4 |
CMOS |
2 |
FLATPACK |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
R-CDFP-F14 |
6 V |
2.33 mm |
6.91 mm |
2 V |
SEATED HT-CALCULATED |
9.95 mm |
HC/UH |
|||||||||||||||||||||||||
|
STMicroelectronics |
NAND GATE |
MILITARY |
GULL WING |
14 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
4 |
CMOS |
2 |
2.7 |
3.3 |
50 pF |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP14,.25 |
5.1 ns |
24 Amp |
Gates |
.65 mm |
125 Cel |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G14 |
1 |
3.6 V |
1.2 mm |
4.4 mm |
Not Qualified |
2 V |
e4 |
5 mm |
LVC/LCX/Z |
||||||||||||||
STMicroelectronics |
NAND GATE |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
50k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
YES |
4 |
CMOS |
2 |
TR |
4.5 |
2/6 |
FLATPACK |
FL14,.3 |
160 ns |
.02 Amp |
Gates |
1.27 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-CDFP-F14 |
6 V |
6.91 mm |
Not Qualified |
2 V |
e0 |
9.95 mm |
HC/UH |
||||||||||||||||
STMicroelectronics |
NAND GATE |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
50k Rad(Si) |
CERAMIC, GLASS-SEALED |
NO |
NO |
4 |
CMOS |
2 |
IN-LINE |
DIP14,.3 |
2.54 mm |
125 Cel |
OPEN-DRAIN |
-55 Cel |
DUAL |
R-GDIP-T14 |
6 V |
2.54 mm |
7.62 mm |
2 V |
19 mm |
HC |
||||||||||||||||||||||||
STMicroelectronics |
OR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
50k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
NO |
NO |
2 |
CMOS |
4 |
4.5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
150 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-CDIP-T14 |
6 V |
3.7 mm |
7.62 mm |
Not Qualified |
2 V |
e0 |
19 mm |
HC/UH |
|||||||||||||||
STMicroelectronics |
NAND GATE |
TR |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
BUFFER |
MILITARY |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
NO |
NO |
6 |
CMOS |
ESCC9000 |
1 |
5/15 |
IN-LINE |
DIP16,.3 |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-CDIP-T16 |
20 V |
3.83 mm |
7.62 mm |
Not Qualified |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
20.32 mm |
4000/14000/40000 |
|||||||||||||||||
STMicroelectronics |
INVERTER |
MILITARY |
FLAT |
16 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC |
NO |
YES |
6 |
CMOS |
ESCC9000 |
1 |
5 |
5/15 |
FLATPACK |
FL16,.3 |
Gates |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDFP-F16 |
20 V |
Not Qualified |
3 V |
|||||||||||||||||||||||
STMicroelectronics |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
50k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
NO |
6 |
CMOS |
1 |
TR |
IN-LINE |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-CDIP-T14 |
6 V |
3.7 mm |
7.62 mm |
2 V |
19 mm |
HC/UH |
|||||||||||||||||||||||||
|
STMicroelectronics |
NAND GATE |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
4 |
CMOS |
2 |
TR |
5 |
FLATPACK |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
R-CDFP-F14 |
20 V |
2.33 mm |
6.91 mm |
3 V |
SEATED HT CALCULATED |
NOT SPECIFIED |
NOT SPECIFIED |
9.95 mm |
4000/14000/40000 |
||||||||||||||||||||
STMicroelectronics |
||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
AND-OR-INVERT GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
1 |
TTL |
8 |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
20 ns |
Gates |
2.54 mm |
70 Cel |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T14 |
5.25 V |
5.1 mm |
7.62 mm |
Not Qualified |
4.75 V |
1.3 mA |
EXPANDABLE |
e0 |
LS |
||||||||||||||||
STMicroelectronics |
AND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
4 |
CMOS |
2 |
5 |
3/18 |
50 pF |
IN-LINE |
DIP14,.3 |
250 ns |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
18 V |
5.08 mm |
7.62 mm |
Not Qualified |
3 V |
e0 |
19.43 mm |
4000/14000/40000 |
|||||||||||||||||
STMicroelectronics |
BUFFER |
MILITARY |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
6 |
CMOS |
1 |
5 |
IN-LINE |
120 ns |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-CDIP-T16 |
18 V |
5.08 mm |
7.62 mm |
3 V |
LG-MAX |
20 mm |
4000/14000/40000 |
||||||||||||||||||||||||
STMicroelectronics |
OR GATE |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
50k Rad(Si) |
CERAMIC, GLASS-SEALED |
NO |
NO |
4 |
CMOS |
2 |
IN-LINE |
DIP14,.3 |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-GDIP-T14 |
6 V |
2.54 mm |
7.62 mm |
2 V |
19 mm |
HC |
|||||||||||||||||||||||||
STMicroelectronics |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
6 |
CMOS |
1 |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
27 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
6 V |
5 mm |
7.62 mm |
Not Qualified |
2 V |
e0 |
HC/UH |
|||||||||||||||||
STMicroelectronics |
BUFFER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
6 |
CMOS |
1 |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
39 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
5.5 V |
5 mm |
7.62 mm |
Not Qualified |
4.5 V |
IOL = 4.0MA @ VOL = 0.40V; IOH = 4.0MA @ VOH = 4.10V |
e0 |
HCT |
||||||||||||||||
STMicroelectronics |
OR GATE |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC |
NO |
YES |
4 |
CMOS |
ESCC9000 |
2 |
5/15 |
FLATPACK |
FL14,.3 |
Gates |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDFP-F14 |
20 V |
Not Qualified |
3 V |
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STMicroelectronics |
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STMicroelectronics |
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STMicroelectronics |
AND GATE |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
YES |
4 |
CMOS |
38535Q/M;38534H;883B |
2 |
4.5 |
2/6 |
50 pF |
FLATPACK |
FL14,.3 |
150 ns |
4 Amp |
Gates |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
R-GDFP-F14 |
NOT APPLICABLE |
6 V |
2.03 mm |
6.285 mm |
Not Qualified |
2 V |
NOT APPLICABLE |
NOT APPLICABLE |
9.21 mm |
HC/UH |
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STMicroelectronics |
OR GATE |
MILITARY |
GULL WING |
5 |
LSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
2 |
3.3 |
2/5.5 |
50 pF |
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH |
TSOP5/6,.11,37 |
12 ns |
4 Amp |
Gates |
.95 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-PDSO-G5 |
5.5 V |
1.45 mm |
1.625 mm |
Not Qualified |
2 V |
e0 |
2.9 mm |
74V |
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STMicroelectronics |
NAND GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
YES |
NO |
4 |
TTL |
2 |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
22 ns |
8 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
14 mA |
e0 |
LS |
Logic gates are electronic circuits that perform basic logical operations on one or more inputs to produce a single output. They are the building blocks of digital circuits and are used to implement digital logic functions, such as AND, OR, NOT, XOR, and NAND.
Logic gates are designed using various technologies, including transistor-transistor logic (TTL), complementary metal-oxide-semiconductor (CMOS), and field-programmable gate arrays (FPGAs). They can be classified into three main types based on their operation: combinational logic gates, sequential logic gates, and programmable logic gates.
Combinational logic gates are logic gates that produce an output based solely on the current input values. These gates include the AND gate, OR gate, NOT gate, XOR gate, and NAND gate. The output of a combinational logic gate depends on the input values and the logic function implemented by the gate.
Sequential logic gates are logic gates that have memory elements and can store information. These gates include the SR flip-flop, D flip-flop, JK flip-flop, and T flip-flop. The output of a sequential logic gate depends on the current input values and the previous state of the gate.
Programmable logic gates are logic gates that can be programmed to implement different logic functions. These gates include programmable logic arrays (PLAs), programmable array logic (PALs), and field-programmable gate arrays (FPGAs). Programmable logic gates can be reprogrammed to adapt to changing system requirements.
Logic gates are used in various applications, including digital signal processing, control systems, and memory systems. They are essential components of digital systems and can be found in many electronic devices, such as computers, mobile phones, and digital cameras.