DDR DRAM MODULE DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Access Time
HYS72D64020GU-7	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
HYB25D512400BS-7.5	Infineon Technologies	DDR DRAM MODULE		66			RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	134217728 words	YES		2.5		4	MICROELECTRONIC ASSEMBLY						128MX4	128M		DUAL	1	R-PDMA-G66	2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH
HYB25D512400AS-7	Infineon Technologies	DDR DRAM MODULE		66			RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	134217728 words	YES		2.5		4	MICROELECTRONIC ASSEMBLY						128MX4	128M		DUAL	1	R-PDMA-G66	2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH
HYB25D512400BR-7.5	Infineon Technologies	DDR DRAM MODULE		66			RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	134217728 words	YES		2.5		4	MICROELECTRONIC ASSEMBLY						128MX4	128M		DUAL	1	R-PDMA-G66	2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH
HYB25D512400BS-8	Infineon Technologies	DDR DRAM MODULE		66			RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	134217728 words	YES		2.5		4	MICROELECTRONIC ASSEMBLY						128MX4	128M		DUAL	1	R-PDMA-G66	2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH
HYB25D512400AS-7.5	Infineon Technologies	DDR DRAM MODULE		66			RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	134217728 words	YES		2.5		4	MICROELECTRONIC ASSEMBLY						128MX4	128M		DUAL	1	R-PDMA-G66	2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH
HYB25D512400AR-7.5	Infineon Technologies	DDR DRAM MODULE		66			RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	134217728 words	YES		2.5		4	MICROELECTRONIC ASSEMBLY						128MX4	128M		DUAL	1	R-PDMA-G66	2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH
HYB25D512400BS-7	Infineon Technologies	DDR DRAM MODULE		66			RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	134217728 words	YES		2.5		4	MICROELECTRONIC ASSEMBLY						128MX4	128M		DUAL	1	R-PDMA-G66	2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH
HYB25D512400AS-8	Infineon Technologies	DDR DRAM MODULE		66			RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	134217728 words	YES		2.5		4	MICROELECTRONIC ASSEMBLY						128MX4	128M		DUAL	1	R-PDMA-G66	2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH
HYB25D512400BR-7F	Infineon Technologies	DDR DRAM MODULE		66			RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	134217728 words	YES		2.5		4	MICROELECTRONIC ASSEMBLY						128MX4	128M		DUAL	1	R-PDMA-G66	2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH
HYB25D512400BR-8	Infineon Technologies	DDR DRAM MODULE		66			RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	134217728 words	YES		2.5		4	MICROELECTRONIC ASSEMBLY						128MX4	128M		DUAL	1	R-PDMA-G66	2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH
HYB25D512400AR-7	Infineon Technologies	DDR DRAM MODULE		66			RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	134217728 words	YES		2.5		4	MICROELECTRONIC ASSEMBLY						128MX4	128M		DUAL	1	R-PDMA-G66	2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH
HYB25D512400BS-7F	Infineon Technologies	DDR DRAM MODULE		66			RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	134217728 words	YES		2.5		4	MICROELECTRONIC ASSEMBLY						128MX4	128M		DUAL	1	R-PDMA-G66	2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH
HYB25D512400AR-8	Infineon Technologies	DDR DRAM MODULE		66			RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	134217728 words	YES		2.5		4	MICROELECTRONIC ASSEMBLY						128MX4	128M		DUAL	1	R-PDMA-G66	2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH
HYB25D512400BR-7	Infineon Technologies	DDR DRAM MODULE		66			RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	134217728 words	YES		2.5		4	MICROELECTRONIC ASSEMBLY						128MX4	128M		DUAL	1	R-PDMA-G66	2.7 V		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH
THMD1GE2SB75	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	134217728 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	133 MHz	Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THMD51E30B70	Toshiba	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THMD1GE2SB80	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	134217728 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	125 MHz	Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	.8 ns
THMD1GE0SB70	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	134217728 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	143 MHz	Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THLD12N11B70	Toshiba	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N200	2.7 V	143 MHz	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	7 ns
THMD12E11B75	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	16777216 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	133 MHz	Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THMD12N11B70	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	143 MHz	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THMD51E01B75	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	133 MHz	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THMD51N01B80	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	125 MHz	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	.8 ns
THMD1GE2SB70	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	134217728 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	143 MHz	Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THMD25E11B80	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	33554432 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	125 MHz	Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH	.8 ns
THLD25N01B80	Toshiba	DDR DRAM MODULE	COMMERCIAL	200			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	33554432 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel	DUAL	1	R-XDMA-N200	2.7 V		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	.8 ns
THLD25N01B75	Toshiba	DDR DRAM MODULE	COMMERCIAL	200			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	33554432 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel	DUAL	1	R-XDMA-N200	2.7 V		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THMD25E30B80	Toshiba	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	33554432 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH	.8 ns
THMD25N11B75	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	133 MHz	Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THLD12N11B75	Toshiba	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N200	2.7 V	133 MHz	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	7.5 ns
THMD12N11B80	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	125 MHz	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	.8 ns
THMD51E01B80	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	125 MHz	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	.8 ns
THMD51N01B70	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	143 MHz	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THMD25N11B80	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	125 MHz	Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	.8 ns
THMD1GE0SB75	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	134217728 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	133 MHz	Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THMD25E11B75	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	33554432 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	133 MHz	Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THMD51E20B70	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	143 MHz	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THMD12E11B80	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	16777216 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	125 MHz	Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH	.8 ns
THMD51N01B75	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	133 MHz	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THMD1GE0SB80	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	134217728 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	125 MHz	Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	.8 ns
THMD51E20B75	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	133 MHz	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THLD25N01B70	Toshiba	DDR DRAM MODULE	COMMERCIAL	200			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	33554432 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel	DUAL	1	R-XDMA-N200	2.7 V		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THLD12N11B80	Toshiba	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N200	2.7 V	125 MHz	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	8 ns
THMD51E20B80	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	125 MHz	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	.8 ns
THMD51E30B80	Toshiba	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	.8 ns
THMD25E30B75	Toshiba	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	33554432 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH	.75 ns
THMD51E01B70	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	DUAL	1	R-XDMA-N184	2.7 V	143 MHz	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.