DDR DRAM MODULE DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
M383L1713FTS-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3200 mA	16777216 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
M378T3253FG0-CD500	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2040 mA	33554432 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	32MX64	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			267 MHz		Not Qualified	2147483648 bit			e3						.5 ns
M383L3310DTS-LA0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4840 mA	33554432 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		100 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH				1.12 Amp			.8 ns
M471B5273EB0-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1440 mA	536870912 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.13 mm	533 MHz	3.8 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				.192 Amp		67.6 mm	.3 ns
M381L3223BT1-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
M470T3354CZ3-LE6	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1080 mA	33554432 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	32MX64	32M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2	1.9 V		333 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH							.45 ns
M393B1K70DH0-H90	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	77309411328 bit	1.283 V	AUTO/SELF REFRESH						133.35 mm	.25 ns
K4H561638H-ZPB00	Samsung	DDR DRAM MODULE	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	280 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	2,4,8	14 mm	.75 ns
M368L2923MT1-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4000 mA	134217728 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		100 MHz		Not Qualified	8589934592 bit	2.3 V	AUTO/SELF REFRESH				.688 Amp			.8 ns
K4H1G0638B-TCAA0	Samsung	DDR DRAM MODULE	COMMERCIAL	66	ATSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		268435456 words		YES		2.5		4	SMALL OUTLINE, PIGGYBACK, THIN PROFILE			.65 mm	70 Cel		256MX4	256M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	2.59 mm		10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
M312L2923BG0-CCC	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5600 mA	134217728 words		YES	COMMON	2.6	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		200 MHz		Not Qualified	9663676416 bit	2.5 V	AUTO/SELF REFRESH							.65 ns
M378B5673GB0-CK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	800 MHz	4 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX			260	.16 Amp		133.35 mm
M383L2828FU1-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
M471A5244BB0-CTD	Samsung	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY			.5 mm	85 Cel		512MX64	512M	0 Cel		DUAL	1	R-XDMA-N260		1.26 V	30.15 mm		2.5 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
M378B5273BH1-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2160 mA	536870912 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V		533 MHz		Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.192 Amp			.3 ns
M368L6423BT1-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
M368L3223HUS-LB30	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2240 mA	33554432 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N184				166 MHz		Not Qualified	2147483648 bit									.7 ns
M391B5773DH0-YH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1125 mA	268435456 words		YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N240	1	1.45 V	30.15 mm	667 MHz	4 mm	Not Qualified	19327352832 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e3			.09 Amp		133.35 mm	.255 ns
M368L6423FUN-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N184	2	2.7 V				Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
M393T2863CZA-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		333 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH			260				.45 ns
M312L5628MT0-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4080 mA	268435456 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		100 MHz		Not Qualified	19327352832 bit	2.3 V	AUTO/SELF REFRESH							.8 ns
M470L1624BT0-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	200			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V				Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
M312L6523BZ0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N184	2	2.7 V				Not Qualified	38654705664 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
M312L6423DT0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4200 mA	67108864 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
M368L6523DUS-CCC	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3080 mA	67108864 words		YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N184	3	2.7 V	1.2 mm	200 MHz	31.75 mm	Not Qualified	4294967296 bit	2.5 V	AUTO/SELF REFRESH			260	.04 Amp		133.35 mm	.65 ns
M383L3310BT0-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
M368L6423AT0-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
M312L3310CT0-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5880 mA	33554432 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH				.372 Amp			.75 ns
M470L2923BV0-LCC	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.6		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2	2.7 V				Not Qualified	8589934592 bit	2.5 V	AUTO/SELF REFRESH							.65 ns
M393B5173EH1-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2970 mA	536870912 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm	400 MHz	30 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	1.08 Amp		133.35 mm	.4 ns
M391T2953BZ3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3105 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel	TIN SILVER COPPER	DUAL	1	R-XDMA-N240	3	1.9 V		267 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e1		260				.5 ns
M378B2873FH0-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1160 mA	134217728 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH			260	.08 Amp		133.35 mm	20 ns
M393T5160QZA-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6750 mA	536870912 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH			260	1.49 Amp			.4 ns
M378T2863QZS-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1840 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260				.45 ns
M471B5773DH0-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1080 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	667 MHz	3.8 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				.096 Amp		67.6 mm	.255 ns
M470T6554BG0-CD5	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1840 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V		267 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	230	.064 Amp			.5 ns
M368L3223FUN-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.75 ns
M393B1K70BH1-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5260 mA	1073741824 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm	533 MHz	30 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	1.19 Amp		133.35 mm
M368L1624FUM-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1400 mA	16777216 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N184	2	2.7 V		166 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH							.7 ns
M393B5670EH1-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4890 mA	268435456 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	4 mm	667 MHz	30 mm	Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH				1.02 Amp		133.35 mm	.225 ns
M378T6453FF0-CE600	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2720 mA	67108864 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX64	64M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			333 MHz		Not Qualified	4294967296 bit			e3			.128 Amp			.45 ns
M383L2828CT1-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
M381L3223FTM-CCC	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3150 mA	33554432 words		YES	COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		200 MHz		Not Qualified	2415919104 bit	2.5 V	AUTO/SELF REFRESH							.65 ns
M470L3224BT0-LA0	Samsung	DDR DRAM MODULE	COMMERCIAL	200			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V				Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH							.8 ns
M368L1713ETM-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2400 mA	16777216 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N184		2.7 V		166 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e0			.024 Amp			.7 ns
M393T5750CZ3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5780 mA	268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel	TIN SILVER COPPER	DUAL	1	R-XDMA-N240	3	1.9 V		267 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e1		260				.5 ns
M470L6524BT0-CCC	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2200 mA	67108864 words		YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		2.7 V		200 MHz		Not Qualified	4294967296 bit	2.5 V	AUTO/SELF REFRESH		30	225				.65 ns
M470L3324CU0-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1380 mA	33554432 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V		133 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.