DDR DRAM MODULE DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

M393T6553CZA-CE7

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

95 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N240

3

1.9 V

400 MHz

Not Qualified

4831838208 bit

1.7 V

AUTO/SELF REFRESH

260

.4 ns

M393T5750EZ3-CCC

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4800 mA

268435456 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

95 Cel

3-STATE

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N240

3

1.9 V

200 MHz

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

260

.6 ns

M391T6453FG0-CD5

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2925 mA

67108864 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

85 Cel

3-STATE

64MX72

64M

0 Cel

TIN LEAD

DUAL

1

R-XDMA-N240

1.9 V

266 MHz

Not Qualified

4831838208 bit

1.7 V

AUTO/SELF REFRESH

e0

.5 ns

M378T6453FZ3-CD5

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2600 mA

67108864 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

95 Cel

3-STATE

64MX64

64M

0 Cel

TIN SILVER COPPER

DUAL

1

R-XDMA-N240

3

1.9 V

266 MHz

Not Qualified

4294967296 bit

1.7 V

AUTO/SELF REFRESH

e1

.128 Amp

.5 ns

M368L2923BTM-CC4

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4200 mA

134217728 words

YES

COMMON

2.6

2.6

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

128MX64

128M

0 Cel

DUAL

1

R-XDMA-N184

1

2.7 V

200 MHz

Not Qualified

8589934592 bit

2.5 V

AUTO/SELF REFRESH

.08 Amp

.65 ns

M391B5673FH0-CK0

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1845 mA

268435456 words

YES

COMMON

1.5

1.5

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

85 Cel

3-STATE

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N240

1.575 V

30.15 mm

800 MHz

Not Qualified

19327352832 bit

1.425 V

AUTO/SELF REFRESH

260

.18 Amp

133.35 mm

20 ns

M383L6420CT1-CB0

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

5880 mA

67108864 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

Other Memory ICs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N184

1

2.7 V

133 MHz

Not Qualified

4831838208 bit

2.3 V

AUTO/SELF REFRESH

1.14 Amp

.75 ns

M470L3324BT0-LB0

Samsung

DDR DRAM MODULE

COMMERCIAL

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1440 mA

33554432 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

70 Cel

3-STATE

32MX64

32M

0 Cel

TIN LEAD

ZIG-ZAG

1

R-XZMA-N200

2.7 V

133 MHz

Not Qualified

2147483648 bit

2.3 V

AUTO/SELF REFRESH

e0

.75 ns

M368L6423CTL-CB0

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N184

1

2.7 V

133 MHz

Not Qualified

4294967296 bit

2.3 V

AUTO/SELF REFRESH

.75 ns

M381L6523BTM-LB0

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2970 mA

67108864 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

Other Memory ICs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

TIN LEAD

DUAL

1

R-XDMA-N184

2.7 V

133 MHz

Not Qualified

4831838208 bit

2.3 V

AUTO/SELF REFRESH

e0

.045 Amp

.75 ns

M395T5750EZ4-CE61

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4000 mA

268435456 words

YES

COMMON

1.8

1.5,1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

85 Cel

3-STATE

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

333 MHz

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

M381L6423ETM-LA2

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2660 mA

67108864 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N184

1

2.7 V

133 MHz

Not Qualified

4831838208 bit

2.3 V

AUTO/SELF REFRESH

.75 ns

M368L3223FUN-LB3

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2240 mA

33554432 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX64

32M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

166 MHz

Not Qualified

2147483648 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.7 ns

M383L6420BT1-CB0

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

7140 mA

67108864 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

Other Memory ICs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N184

1

2.7 V

133 MHz

Not Qualified

4831838208 bit

2.3 V

AUTO/SELF REFRESH

.75 Amp

.75 ns

M312L6420DG0-LA2

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

6050 mA

67108864 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

Other Memory ICs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

133 MHz

Not Qualified

4831838208 bit

2.3 V

AUTO/SELF REFRESH

1.15 Amp

.75 ns

M378T3253FZ3-CCC

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2040 mA

33554432 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

95 Cel

3-STATE

32MX64

32M

0 Cel

TIN SILVER COPPER

DUAL

1

R-XDMA-N240

3

1.9 V

200 MHz

Not Qualified

2147483648 bit

1.7 V

AUTO/SELF REFRESH

e1

.064 Amp

.6 ns

M391B5673GB0-CH9

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1305 mA

268435456 words

YES

COMMON

1.5

1.5

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

85 Cel

3-STATE

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N240

2

1.575 V

30.15 mm

667 MHz

4 mm

Not Qualified

19327352832 bit

1.425 V

AUTO/SELF REFRESH; WD-MAX

.18 Amp

133.35 mm

.255 ns

M393A2G40DB1-CRC

Samsung

DDR DRAM MODULE

OTHER

288

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2147483648 words

YES

COMMON

1.2

1.2,2.5

72

MICROELECTRONIC ASSEMBLY

DIMM288,33

Other Memory ICs

.85 mm

85 Cel

3-STATE

2GX72

2G

0 Cel

DUAL

1

R-XDMA-N288

1.26 V

31.4 mm

1200 MHz

3.9 mm

Not Qualified

154618822656 bit

1.14 V

AUTO/SELF REFRESH; WD-MAX

NOT SPECIFIED

NOT SPECIFIED

133.35 mm

M378A5143DB0-CRC

Samsung

DDR DRAM MODULE

OTHER

288

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1200 mA

536870912 words

YES

COMMON

1.2

1.2

64

MICROELECTRONIC ASSEMBLY

DIMM288,33

DRAMs

85 Cel

3-STATE

512MX64

512M

0 Cel

DUAL

1

R-XDMA-N288

1.26 V

31.4 mm

1200 MHz

2.7 mm

Not Qualified

34359738368 bit

1.14 V

AUTO/SELF REFRESH; WD-MAX

.06 Amp

133.35 mm

.175 ns

M312L2923BUS-CA2

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4260 mA

134217728 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2

2.7 V

133 MHz

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

.75 ns

M393T5750BS0-CD5

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

7140 mA

268435456 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

95 Cel

3-STATE

256MX72

256M

0 Cel

TIN LEAD

DUAL

1

R-XDMA-N240

1.9 V

267 MHz

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

e0

.5 ns

M312L6423BT0-LB0

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4395 mA

67108864 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N184

1

2.7 V

133 MHz

Not Qualified

4831838208 bit

2.3 V

AUTO/SELF REFRESH

.75 ns

M368L6523MTL-LB0

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

3840 mA

67108864 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N184

1

2.7 V

133 MHz

Not Qualified

4294967296 bit

2.3 V

AUTO/SELF REFRESH

.048 Amp

.75 ns

M471B5774EB0-YK0

Samsung

DDR DRAM MODULE

OTHER

204

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

268435456 words

COMMON

1.35

1.35

64

MICROELECTRONIC ASSEMBLY

DIMM204,24

DRAMs

.6 mm

85 Cel

3-STATE

256MX64

256M

0 Cel

DUAL

R-PDMA-N204

800 MHz

Not Qualified

17179869184 bit

K4B4G0446B-HYF8

Samsung

DDR DRAM MODULE

78

TFBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

YES

1.35

4

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

1GX4

1G

BOTTOM

1

R-PBGA-B78

1.45 V

1.2 mm

10 mm

4294967296 bit

1.283 V

AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY

11 mm

M368L1713DTL-LB3

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

4096

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2640 mA

16777216 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N184

1

2.7 V

166 MHz

Not Qualified

1073741824 bit

2.3 V

AUTO/SELF REFRESH

.028 Amp

.7 ns

M393B2873GB0-CMA

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1980 mA

134217728 words

YES

COMMON

1.5

1.5

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

85 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

1.575 V

30.15 mm

933 MHz

Not Qualified

9663676416 bit

1.425 V

AUTO/SELF REFRESH

260

.72 Amp

133.35 mm

20 ns

M470L6524DU0-LA2

Samsung

DDR DRAM MODULE

COMMERCIAL

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1560 mA

67108864 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N200

2.7 V

133 MHz

Not Qualified

4294967296 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.04 Amp

.75 ns

M312L6523FH3-CCC

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4215 mA

67108864 words

YES

COMMON

2.6

2.6

72

MICROELECTRONIC ASSEMBLY

DIMM184

Other Memory ICs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N184

3

2.7 V

200 MHz

Not Qualified

4831838208 bit

2.5 V

AUTO/SELF REFRESH

260

.42 Amp

.65 ns

M391T2863DZ3-CF7

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2340 mA

134217728 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

85 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

3

1.9 V

4 mm

400 MHz

30 mm

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

260

.135 Amp

133.35 mm

.4 ns

M381L6523BTM-CB3

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

3600 mA

67108864 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

Other Memory ICs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N184

1

2.7 V

166 MHz

Not Qualified

4831838208 bit

2.3 V

AUTO/SELF REFRESH

.045 Amp

.7 ns

M378T2953EZ3-CE7

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2200 mA

134217728 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

95 Cel

3-STATE

128MX64

128M

0 Cel

DUAL

1

R-XDMA-N240

3

1.9 V

400 MHz

Not Qualified

8589934592 bit

1.7 V

AUTO/SELF REFRESH

260

.128 Amp

.4 ns

M393A2K43BB1-CTD

Samsung

DDR DRAM MODULE

288

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2147483648 words

YES

1.2

72

MICROELECTRONIC ASSEMBLY

.85 mm

2GX72

2G

DUAL

1

R-XDMA-N288

1.26 V

31.25 mm

4.3 mm

154618822656 bit

1.14 V

AUTO/SELF REFRESH; WD-MAX

NOT SPECIFIED

NOT SPECIFIED

133.35 mm

M381L1713CT1-CB0

Samsung

DDR DRAM MODULE

COMMERCIAL

184

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

16777216 words

YES

2.5

72

MICROELECTRONIC ASSEMBLY

70 Cel

16MX72

16M

0 Cel

DUAL

1

R-XDMA-N184

1

2.7 V

Not Qualified

1207959552 bit

2.3 V

AUTO/SELF REFRESH

.75 ns

M391T2953EZ3-CD5

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1935 mA

134217728 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

95 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

3

1.9 V

267 MHz

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

260

.5 ns

M391B1G73BH0-CMA0

Samsung

DDR DRAM MODULE

M381L3313BT1-LB0

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

4096

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N184

1

2.7 V

133 MHz

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

.75 ns

M378T3253FG0-CCC

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2040 mA

33554432 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

85 Cel

3-STATE

32MX64

32M

0 Cel

TIN LEAD

DUAL

1

R-XDMA-N240

1.9 V

200 MHz

Not Qualified

2147483648 bit

1.7 V

AUTO/SELF REFRESH

e0

.064 Amp

.6 ns

M393B2K70BM1-CF7

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

6780 mA

2147483648 words

YES

COMMON

1.5

1.5

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

85 Cel

3-STATE

2GX72

2G

0 Cel

DUAL

1

R-XDMA-N240

1.575 V

4 mm

400 MHz

30 mm

Not Qualified

154618822656 bit

1.425 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

133.35 mm

M381L3223HUM-LCCT

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

2700 mA

33554432 words

COMMON

2.6

2.6

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

R-PDMA-N184

200 MHz

Not Qualified

2415919104 bit

.65 ns

M312L1713CT0-LA2

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

4096

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4220 mA

16777216 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

1

R-XDMA-N184

1

2.7 V

133 MHz

Not Qualified

1207959552 bit

2.3 V

AUTO/SELF REFRESH

1.12 Amp

.75 ns

M381L3313ETM-LAA

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

4096

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

TIN LEAD

DUAL

1

R-XDMA-N184

2.7 V

133 MHz

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

e0

.75 ns

M386A8K40BM2-CTD

Samsung

DDR DRAM MODULE

288

DIMM

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

8589934592 words

YES

1.2

72

MICROELECTRONIC ASSEMBLY

.85 mm

8GX72

8G

DUAL

1

R-XDMA-N288

1.26 V

31.4 mm

4.3 mm

618475290624 bit

1.14 V

AUTO/SELF REFRESH

133.35 mm

M391T2953BZ3-CCC

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

3015 mA

134217728 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

95 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

2

1.9 V

200 MHz

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

.6 ns

M381L3223CTL-LB3

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

166 MHz

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

.7 ns

M485L3324BT0-LB3

Samsung

DDR DRAM MODULE

COMMERCIAL

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM200,24

Other Memory ICs

.6 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N200

1

2.7 V

166 MHz

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

.025 Amp

.7 ns

M381L6423CTL-CB0

Samsung

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

3015 mA

67108864 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N184

1

2.7 V

133 MHz

Not Qualified

4831838208 bit

2.3 V

AUTO/SELF REFRESH

.75 ns

M393B2G70QH0-YH9

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2147483648 words

YES

1.35

72

MICROELECTRONIC ASSEMBLY

1 mm

85 Cel

2GX72

2G

0 Cel

DUAL

1

R-XDMA-N240

1.45 V

30.15 mm

4 mm

154618822656 bit

1.283 V

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX

133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.