DDR DRAM MODULE DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M470T6554CZ0-CE7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1520 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2	1.9 V		400 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH				.064 Amp		.4 ns
M395T2953GZ4-CE65	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4000 mA	134217728 words	YES	COMMON	1.5	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.575 V		333 MHz		Not Qualified	9663676416 bit	1.455 V	AUTO/SELF REFRESH			260
M378T2863FBS-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1160 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		333 MHz	2.7 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260		133.35 mm	.45 ns
M391A2K43BB1-CPB/RC/TD	Samsung	DDR DRAM MODULE
M393B5270BH1-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm		30 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		133.35 mm
M391T2953BG3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3105 mA	134217728 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N240		1.9 V		267 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e0					.5 ns
M368L3324BTM-LAA	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1440 mA	33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N184		2.7 V		133 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	e0					.75 ns
M485L3223DT0-LB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2920 mA	33554432 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V		166 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH						.7 ns
M368L6423ETN-LB3	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2680 mA	67108864 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N184		2.7 V		166 MHz		Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH	e0					.7 ns
M391B2873DZ1-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3285 mA	134217728 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.575 V		667 MHz		Not Qualified	9663676416 bit	1.425 V	AUTO/SELF REFRESH			260	.108 Amp		.255 ns
M383L3313BT1-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4125 mA	33554432 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V		133 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH				1.02 Amp		.75 ns
M312L6423EUS-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184	2	2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH						.8 ns
M378B5673DZ1-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2640 mA	268435456 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.575 V		533 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH			260	.176 Amp		.3 ns
M368L1624FUM-CC4	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.6		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH						.65 ns
M312L6423HUS-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3410 mA	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V		133 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.75 ns
M368L3313CT1-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3240 mA	33554432 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N184				133 MHz		Not Qualified	2147483648 bit								.75 ns
M391B5273EB0-CK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1674 mA	536870912 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	800 MHz	4 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M393T6453FZ0-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3605 mA	67108864 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240	2	1.9 V		267 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH				.784 Amp		.5 ns
M392T6553CZA-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2560 mA	67108864 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		333 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.45 ns
M393T2950GZ3-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3700 mA	134217728 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		200 MHz		Not Qualified	9663676416 bit	1.7 V	SELF CONTAINED REFRESH			260	.144 Amp		.6 ns
M368L3313DTL-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH						.75 ns
M383L6423AT0-LA0	Samsung	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH						.8 ns
M395T5750EZ4-CD520	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY						256MX72	256M			DUAL	1	R-XDMA-N240	2	1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH
M383L3313DTS-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4040 mA	33554432 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH				1.13 Amp		.75 ns
M485L1624FU0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.75 ns
M393B1G70BH0-CMA	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	933 MHz	4 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm	.195 ns
M391T2953CZ0-CD6	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY						128MX72	128M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH						.45 ns
M393T1G60CJA-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		200 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.6 ns
M393B2873FH0-YF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	95 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.15 mm			Not Qualified	9663676416 bit	1.2825 V	AUTO/SELF REFRESH					133.35 mm	.3 ns
M471B5273CH0-YF8	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1520 mA	536870912 words	YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm	533 MHz	3.8 mm	Not Qualified	34359738368 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX			260	.192 Amp	67.6 mm	.3 ns
M378B5773DH0-CMA	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1160 mA	268435456 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	933 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.096 Amp	133.35 mm	20 ns
M470T5267AZ3-LF7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3280 mA	536870912 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N200	3	1.9 V	30 mm	400 MHz	3.8 mm	Not Qualified	34359738368 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM			260	.128 Amp	67.6 mm	.4 ns
M383L6420AT0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH						.75 ns
M368L1624FUM-LAA	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.75 ns
M383L1713CT1-LA0	Samsung	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH						.8 ns
M383L1713CT1-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH						.75 ns
KMM368L1714BT-F0	Samsung	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH						.8 ns
M470L3224FT0-LC4	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1820 mA	33554432 words	YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V		200 MHz		Not Qualified	2147483648 bit	2.5 V	AUTO/SELF REFRESH				.032 Amp		.65 ns
M395T5750EZ4-CD510	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY						256MX72	256M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH
M368L6523MT1-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3840 mA	67108864 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH				.048 Amp		.75 ns
M381L2923BUM-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4050 mA	134217728 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	TIN SILVER COPPER	DUAL	1	R-XDMA-N184	3	2.7 V		166 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e1					.7 ns
M312L5623AUS-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4040 mA	268435456 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V		133 MHz		Not Qualified	19327352832 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.72 Amp		.75 ns
M393T5663FBA-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2695 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		400 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH			260		133.5 mm	.4 ns
M391T5663AZ3-CCC000	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				95 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH						.6 ns
M312L5620AUS-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6690 mA	268435456 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V		166 MHz		Not Qualified	19327352832 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.65 Amp		.7 ns
M393T2953CZ0-CD5000	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY						128MX72	128M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH						.5 ns
M393B5270EB0-CMA	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3600 mA	536870912 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	933 MHz	4 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				.846 Amp	133.35 mm	.195 ns
M312L3310CT0-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4800 mA	33554432 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		100 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH				.363 Amp		.8 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.