DDR4 DRAM DRAM 722

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length
MT40A256M16GE-075EA:B	Micron Technology	DDR4 DRAM	COMMERCIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	72 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	256MX16	256M	1.14 V	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333 MHz	9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH				.058 Amp	8	14 mm
MT40A512M8SA-062EAAT:FTR	Micron Technology	DDR4 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	105 Cel		3-STATE	512MX8	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1600 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
MT40A256M16LY-083EAAT:F	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	52 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	105 Cel		3-STATE	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH				.042 Amp	8	13.5 mm
MT40A512M8SA-062AUT:F	Micron Technology	DDR4 DRAM
MT40A512M8RH-075EAAT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	61 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	105 Cel		3-STATE	512MX8	512M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.06 Amp	8	10.5 mm
MT40A512M8RH-062EA:B	Micron Technology	DDR4 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		3-STATE	512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1600 MHz	9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH					8	10.5 mm
MT40A512M8RH-075EAUT:F	Micron Technology	DDR4 DRAM	AUTOMOTIVE	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	49 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	125 Cel		3-STATE	512MX8	512M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1333 MHz	9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH				.045 Amp	8	10.5 mm
MT40A256M16GE-062EIT	Micron Technology	DDR4 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32	.8 mm	95 Cel			256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH					8	14 mm
MT40A256M16LY-083EAAT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	71 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	105 Cel		3-STATE	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH				.059 Amp	8	13.5 mm
MT40A512M8RH-083EAAT:F	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	45 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	105 Cel		3-STATE	512MX8	512M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1200 MHz	9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH				.041 Amp	8	10.5 mm
MT40A1G16KD-068IT:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	267 mA	1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	1GX16	1G		-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1466 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.04 Amp	8	13 mm
MT40A256M16LY-083EAIT:F	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	50 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH				.04 Amp	8	13.5 mm
MT40A512M8RH-062EAUT:F	Micron Technology	DDR4 DRAM	AUTOMOTIVE	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	53 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	125 Cel		3-STATE	512MX8	512M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1600 MHz	9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH				.049 Amp	8	10.5 mm
MT40A8G4CLU-062H:ETR	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8589934592 words		YES		1.2	4	GRID ARRAY			95 Cel			8GX4	8G		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78	1.26 V				34359738368 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
MT40A256M16GE-075EA:F	Micron Technology	DDR4 DRAM	COMMERCIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	56 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	256MX16	256M	1.14 V	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333 MHz	9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH				.046 Amp	8	14 mm
MT40A512M8HX-083E	Micron Technology	DDR4 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32	.8 mm				512MX8	512M				BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	10.5 mm
MT53B1024M32D4NQ-053WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel			1GX32	1G		-30 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	1866 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	14.5 mm
MT40A4G4DVN-068H:E	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words		YES		1.2	4	GRID ARRAY			95 Cel			4GX4	4G		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V				17179869184 bit	1.14 V	AUTO/SELF REFRESH
MT40A512M8RH-075E:B	Micron Technology	DDR4 DRAM	COMMERCIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	70 Cel			512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH						10.5 mm
MT40A1G16JC-068IT:B	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	267 mA	1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		3-STATE	1GX16	1G		-40 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1466 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.04 Amp	8	11 mm
MT40A512M8SA-075EA:F	Micron Technology	DDR4 DRAM	COMMERCIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	49 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		3-STATE	512MX8	512M	1.14 V	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1333 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH				.045 Amp	8	11 mm
MT40A512M8SA-062EAUT:F	Micron Technology	DDR4 DRAM	AUTOMOTIVE	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	53 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	125 Cel		3-STATE	512MX8	512M	1.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.049 Amp	8	11 mm
MT40A4G4JC-062E:B	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	234 mA	4294967296 words	8	YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		3-STATE	4GX4	4G		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.04 Amp	8	11 mm
MT40A512M8RH-075EAUT	Micron Technology	DDR4 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32	.8 mm	125 Cel			512MX8	512M		-40 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1333.33 MHz	9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	10.5 mm
MT40A2G4SA-075:ETR	Micron Technology	DDR4 DRAM																															TIN SILVER COPPER											e1	30	260
MT40A2G8VA-068IT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	193 mA	2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		3-STATE	2GX8	2G		-40 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1466 MHz	10 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.04 Amp	8	11 mm
MT40A256M16HA-107E:A	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel			256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT53B1024M32D4NQ-062WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel			1GX32	1G		-30 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	1600 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	14.5 mm
MT40A4G4KD-062E:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	234 mA	4294967296 words	8	YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	4GX4	4G		0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.04 Amp	8	13 mm
MT40A256M16GE-075EAUT	Micron Technology	DDR4 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32	.8 mm	125 Cel			256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333.33 MHz	9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	14 mm
MT40A2G4WE-083E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32	.8 mm	85 Cel	NO		2GX4	2G		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	12 mm
MT40A512M16JY-062E:BTR	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel			512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH						14 mm
MT40A512M8SA-083EAIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	56 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		3-STATE	512MX8	512M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1200 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH				.057 Amp	8	11 mm
MT40A4G4RC-068IT:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	4294967296 words	8	YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	4GX4	4G		-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1466 MHz	10 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.04 Amp	8	13 mm
MT40A512M8RH-083EAAT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	58 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	105 Cel		3-STATE	512MX8	512M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.059 Amp	8	10.5 mm
MT40A512M8RH-062EAIT:F	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	49 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		3-STATE	512MX8	512M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1600 MHz	9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH				.045 Amp	8	10.5 mm
MT40A2G8RC-068IT:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	193 mA	2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	2GX8	2G		-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1466 MHz	10 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.04 Amp	8	13 mm
MT40A1G16KD-062EAAT:E	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	251 mA	1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	105 Cel		3-STATE	1GX16	1G		-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.043 Amp	8	13 mm
MT40A512M8HX-083E:A	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel			512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH						11.5 mm
MT40A2G8JC-062EAAT:E	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	189 mA	2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	105 Cel		3-STATE	2GX8	2G		-40 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.043 Amp	8	11 mm
MT40A2G8KD-068IT:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	193 mA	2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	2GX8	2G		-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1466 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.04 Amp	8	13 mm
MT40A4G4SA-062E:F	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words	8	YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel			4GX4	4G		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1600 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT40A2G4SA-062E:J	Micron Technology	DDR4 DRAM		78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32	.8 mm	95 Cel	NO		2GX4	2G		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT40A2G4SA-062E:R	Micron Technology	DDR4 DRAM		78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32	.8 mm	95 Cel	NO		2GX4	2G		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT53E512M64D2HJ-046AIT:B	Micron Technology	DDR4 DRAM
MT53E512M64D2HJ-046AAT:B	Micron Technology	DDR4 DRAM
MT53E512M64D2HJ-046AUT:B	Micron Technology	DDR4 DRAM
MT53E768M64D4HJ-046WT:B	Micron Technology	DDR4 DRAM

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.