DDR4 DRAM DRAM 722

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length
SUU64M16ZD8KNR-083	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200.48 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					13.5 mm
SUU8192M8ZD8CLU-093H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8589934592 words		YES		1.2	4				95 Cel		8GX4	8G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1067.23 MHz		34359738368 bit	1.14 V	AUTO/SELF REFRESH
SUU64M16ZD8WBU-075E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333.33 MHz	8 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					14 mm
PRM64M16ZD8HBA-075	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333.33 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					14 mm
SUU64M16ZD8HBA-083	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200.48 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					14 mm
PRM1G8Z91BD8PM-93E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	9 mm	8589934592 bit						4,8	13.2 mm
SUU512M16Z91BD8HA-093DG	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	4,8		COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		512MX16	512M	0 Cel	BOTTOM	1	R-PBGA-B96		1.2 mm	1067 MHz	9 mm	8589934592 bit						4,8	14 mm
MTA9ADF2G72AZ-3G2XX	Micron Technology	DDR4 DRAM
MTA9ADF2G72AZ-3G2F1	Micron Technology	DDR4 DRAM
MTA18ASF4G72PDZ-3G2F1	Micron Technology	DDR4 DRAM
PRA64M16ZD8HBA-107E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	933.7 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					14 mm
SUU1G16Z32DD8KD-093TP	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	4,8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1067 MHz	9 mm	17179869184 bit	1.14 V					4,8	13 mm
SUU512M16Z11CD8LY-093TP	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	4,8		COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		512MX16	512M	0 Cel	BOTTOM	1	R-PBGA-B96		1.2 mm	1067 MHz	7.5 mm	8589934592 bit						4,8	13.5 mm
PRM4096M16ZD8CLU-083J	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words		YES		1.2	8				95 Cel		4GX8	4G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz		34359738368 bit	1.14 V	AUTO/SELF REFRESH
PRM1G8Z11CD8SA-083E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	7.5 mm	8589934592 bit						4,8	11 mm
PRM64M16ZD8KNR-083	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200.48 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					13.5 mm
SUU64M16ZD8KNR-075	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333.33 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					13.5 mm
PRM64M16ZD8KNR-075	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333.33 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					13.5 mm
PRM1G16Z32DD8KD-075E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	4,8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333 MHz	9 mm	17179869184 bit	1.14 V					4,8	13 mm
PRM64M16ZD8KNR-068	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1466.27 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					13.5 mm
SUM64M16ZD8HBA-107E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	933.7 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					14 mm
PRM2G8Z22AD8VA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words	4,8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1333 MHz	10 mm	17179869184 bit	1.14 V					4,8	11 mm
PRN2G8Z32DD8JC-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words	4,8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1333 MHz	9 mm	17179869184 bit	1.14 V					4,8	11 mm
SGG2048M8ZD8DVN-083J	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.2	8				95 Cel		2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz		17179869184 bit	1.14 V	AUTO/SELF REFRESH
PRM2G8Z32DD8JC-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words	4,8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1333 MHz	9 mm	17179869184 bit	1.14 V					4,8	11 mm
PRM512M16Z11CD8LY-083E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	4,8		COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		512MX16	512M	0 Cel	BOTTOM	1	R-PBGA-B96		1.2 mm	1200 MHz	7.5 mm	8589934592 bit						4,8	13.5 mm
PRM64M16ZD8WBU-075E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333.33 MHz	8 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					14 mm
SUU1G8Z01BD8WE-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	8 mm	8589934592 bit						4,8	12 mm
SMG2048M8ZD8DVN-083J	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.2	8				95 Cel		2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz		17179869184 bit	1.14 V	AUTO/SELF REFRESH
PRM1G8Z01AD8WE-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	8 mm	8589934592 bit						4,8	12 mm
SUU512M16Z11BD8LY-093DG	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	4,8		COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		512MX16	512M	0 Cel	BOTTOM	1	R-PBGA-B96		1.2 mm	1067 MHz	7.5 mm	8589934592 bit						4,8	13.5 mm
EDY4016AABG-JD-F-D	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		256MX16	256M	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH					13.5 mm
SUU64M16ZD8HBA-075E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333.33 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					14 mm
SUM2G8Z32DD8JC-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words	4,8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1067 MHz	9 mm	17179869184 bit	1.14 V					4,8	11 mm
SUU2G8Z32DD8JC-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words	4,8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1067 MHz	9 mm	17179869184 bit	1.14 V					4,8	11 mm
PRN1G8Z21CDFSA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	7.5 mm	8589934592 bit						4,8	11 mm
MTA18ASF2G72XF1Z-2G6XXXXX	Micron Technology	DDR4 DRAM																																							NOT SPECIFIED	NOT SPECIFIED
PRA1G8Z21CD8SA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	7.5 mm	8589934592 bit						4,8	11 mm
PRN4096M16ZD8CLU-083H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words		YES		1.2	8				95 Cel		4GX8	4G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz		34359738368 bit	1.14 V	AUTO/SELF REFRESH
SUM64M16ZD8KNR-068	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1466.27 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					13.5 mm
SUU1G8Z11CD8SA-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	7.5 mm	8589934592 bit						4,8	11 mm
SUU1G8Z21ED8VA-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78			1067 MHz	10 mm	8589934592 bit						4,8	11 mm
SUM1G8Z01AD8WE-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	8 mm	8589934592 bit						4,8	12 mm
PRM2G8Z32DD8JC-062E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words	4,8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V					4,8	11 mm
PRM1G8Z11BD8SA-062E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1600 MHz	7.5 mm	8589934592 bit						4,8	11 mm
SUM64M16ZD8HBA-062E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					14 mm
MT40A8G4CLU-068H:E	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8589934592 words		YES		1.2	4	GRID ARRAY			95 Cel		8GX4	8G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V				34359738368 bit	1.14 V	AUTO/SELF REFRESH
MT40A2G8KD-062EAIT:E	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	189 mA	2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	2GX8	2G	-40 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH			.043 Amp	8	13 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.