DDR4 DRAM DRAM 722

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Interleaved Burst Length	Length
EDY4016AABG-GX-F-R	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	256MX16	256M	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		13.5 mm
PRM64M16ZD8HBA-062E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		14 mm
EDY4016AABG-JD-F-R	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	256MX16	256M	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		13.5 mm
SUU512M16Z21CD8TB-093DG	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words	4,8		COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	512MX16	512M	0 Cel	BOTTOM	1	R-PBGA-B96		1.2 mm	1067 MHz	7.5 mm	8589934592 bit			4,8	13 mm
PRA64M16ZD8KNR-075	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333.33 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		13.5 mm
PRA64M16ZD8HBA-068	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1466.27 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		14 mm
PRA64M16ZD8HBA-075E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333.33 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		14 mm
PRN1G8Z01AD8WE-083E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1200 MHz	8 mm	8589934592 bit			4,8	12 mm
PRN2048M8ZD8DVN-093H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2147483648 words		YES		1.2	8				95 Cel	2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1067.23 MHz		17179869184 bit	1.14 V	AUTO/SELF REFRESH
PRA64M16ZD8WBU-083E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200.48 MHz	8 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		14 mm
PRA64M16ZD8HBA-083E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200.48 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		14 mm
PRM1G8Z91BD8PM-083	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1200 MHz	9 mm	8589934592 bit			4,8	13.2 mm
PRM1G8Z11BD8SA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	7.5 mm	8589934592 bit			4,8	11 mm
PRM64M16ZD8WBU-107E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	933.7 MHz	8 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		14 mm
MTA36ASF8G72PZ-2G9XX	Micron Technology	DDR4 DRAM
SUM1G8Z01BD8WE-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	8 mm	8589934592 bit			4,8	12 mm
SUM1G8Z11BD8SA-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	7.5 mm	8589934592 bit			4,8	11 mm
SUM64M16ZD8KNR-075E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333.33 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		13.5 mm
MTA144ASQ16G72LSZ-2S6G1	Micron Technology	DDR4 DRAM
PRA64M16ZD8WBU-062E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	8 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		14 mm
SUU64M16ZD8HBA-062E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		14 mm
PRA1G8Z11BD8SA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	7.5 mm	8589934592 bit			4,8	11 mm
SUU512M16Z91BD8HA-093TP	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words	4,8		COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	512MX16	512M	0 Cel	BOTTOM	1	R-PBGA-B96		1.2 mm	1067 MHz	9 mm	8589934592 bit			4,8	14 mm
SGG2048M8ZD8DVN-075H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2147483648 words		YES		1.2	8				95 Cel	2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1333.33 MHz		17179869184 bit	1.14 V	AUTO/SELF REFRESH
SUM512M16Z01AD8JY-093TP	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words	4,8		COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	512MX16	512M	0 Cel	BOTTOM	1	R-PBGA-B96		1.2 mm	1067 MHz	8 mm	8589934592 bit			4,8	14 mm
PRN4096M4ZD8DVN-083H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	4294967296 words		YES		1.2	4				95 Cel	4GX4	4G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz		17179869184 bit	1.14 V	AUTO/SELF REFRESH
SUU512M16Z11BD8LY-093TP	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words	4,8		COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	512MX16	512M	0 Cel	BOTTOM	1	R-PBGA-B96		1.2 mm	1067 MHz	7.5 mm	8589934592 bit			4,8	13.5 mm
PRM1G8Z91BD8PM-083E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1200 MHz	9 mm	8589934592 bit			4,8	13.2 mm
PRA64M16ZD8HBA-083	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200.48 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		14 mm
SUM8192M8ZD8CLU-093H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	8589934592 words		YES		1.2	4				95 Cel	8GX4	8G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1067.23 MHz		34359738368 bit	1.14 V	AUTO/SELF REFRESH
SUM64M16ZD8HBA-075	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333.33 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		14 mm
EDY4016AABG-DR-F-D	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	256MX16	256M	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		13.5 mm
PRA64M16ZD8KNR-083E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200.48 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		13.5 mm
PRA64M16ZD8KNR-083	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200.48 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		13.5 mm
SGG2048M8ZD8DVN-083H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2147483648 words		YES		1.2	8				95 Cel	2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz		17179869184 bit	1.14 V	AUTO/SELF REFRESH
PRN2048M8ZD8DVN-075H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2147483648 words		YES		1.2	8				95 Cel	2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1333.33 MHz		17179869184 bit	1.14 V	AUTO/SELF REFRESH
PRM64M16ZD8KNR-062E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		13.5 mm
PRM1024M8Z91BD8PMF-083	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1200 MHz	9 mm	8589934592 bit			4,8	13.2 mm
SUU2G8Z22AD8VA-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2147483648 words	4,8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1067 MHz	10 mm	17179869184 bit	1.14 V		4,8	11 mm
PRM2048M8ZD8DVN-083H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2147483648 words		YES		1.2	8				95 Cel	2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz		17179869184 bit	1.14 V	AUTO/SELF REFRESH
SUM8192M8ZD8CLU-083H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	8589934592 words		YES		1.2	4				95 Cel	8GX4	8G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz		34359738368 bit	1.14 V	AUTO/SELF REFRESH
PRN1G8Z11CD8SA-083E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	7.5 mm	8589934592 bit			4,8	11 mm
SUM1G8Z91BD8PM-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	9 mm	8589934592 bit			4,8	13.2 mm
PRM2048M8ZD8DVN-075H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2147483648 words		YES		1.2	8				95 Cel	2GX8	2G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1333.33 MHz		17179869184 bit	1.14 V	AUTO/SELF REFRESH
PRA1G8Z01BD8WE-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	8 mm	8589934592 bit			4,8	12 mm
PRM4096M16ZD8CLU-075H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	4294967296 words		YES		1.2	8				95 Cel	4GX8	4G	0 Cel	BOTTOM	1	R-PBGA-B78	1.26 V		1333.33 MHz		34359738368 bit	1.14 V	AUTO/SELF REFRESH
PRM64M16ZD8KNR-107E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	933.7 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		13.5 mm
PRM1G8Z01AD8WE-083E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel	BOTTOM	1	R-PBGA-B78		1.2 mm	1200 MHz	8 mm	8589934592 bit			4,8	12 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.