DDR4 DRAM DRAM 722

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Interleaved Burst Length	Length
K4A4G165WE-BCWE	Samsung	DDR4 DRAM	OTHER	96			RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL		268435456 words				1.2	16				85 Cel	256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96					4294967296 bit
K4A4G045WE-BCTD0	Samsung	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel	1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH					11 mm
K4A4G085WD-BIPB0	Samsung	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	512MX8	512M	-40 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH					11 mm
K4A4G165WE-BIPB0	Samsung	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		13.3 mm
K4A4G085WD-BIRC0	Samsung	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	512MX8	512M	-40 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH					11 mm
K4A4G085WF-BITD	Samsung	DDR4 DRAM	INDUSTRIAL	78			RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL		536870912 words				1.2	8				95 Cel	512MX8	512M	-40 Cel		BOTTOM	1	R-PBGA-B78					4294967296 bit
K4A4G085WD-BCPB0	Samsung	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH					11 mm
K4A4G165WD-BIPB0	Samsung	DDR4 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm		256MX16	256M			BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH					13.3 mm
K4A4G085WE-BIRC	Samsung	DDR4 DRAM	INDUSTRIAL	78			RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL		536870912 words				1.2	8				95 Cel	512MX8	512M	-40 Cel		BOTTOM	1	R-PBGA-B78					4294967296 bit
K4A4G165WE-BCPB0	Samsung	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		13.3 mm
K4A4G165WE-BITD0	Samsung	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		13.3 mm
K4A4G165WF-BITD	Samsung	DDR4 DRAM	INDUSTRIAL	96			RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL		268435456 words				1.2	16				95 Cel	256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B96					4294967296 bit
K4A4G165WE-BCRC0	Samsung	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		13.3 mm
K4A4G085WE-BITD	Samsung	DDR4 DRAM	INDUSTRIAL	78			RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL		536870912 words				1.2	8				95 Cel	512MX8	512M	-40 Cel		BOTTOM	1	R-PBGA-B78					4294967296 bit
K4A4G165WE-BIRC0	Samsung	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		13.3 mm
K4A4G045WE-BCRC0	Samsung	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH					11 mm
K4A4G165WE-BCTD0	Samsung	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		13.3 mm
K4A4G165WD-BCRC0	Samsung	DDR4 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm		256MX16	256M			BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH					13.3 mm
PRN1G8Z01AD8WE-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	8 mm	8589934592 bit						4,8	12 mm
SUM1G8Z11CD8SA-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	7.5 mm	8589934592 bit						4,8	11 mm
SUU1G8Z31AD8JC-TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78				9 mm	8589934592 bit						4,8	11 mm
SUU64M16ZD8HBA-107E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	933.7 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					14 mm
MTA9ASF2G72PZ-2G9XX	Micron Technology	DDR4 DRAM
PRM4096M16ZD8CLU-083H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	4294967296 words		YES		1.2	8				95 Cel	4GX8	4G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz		34359738368 bit	1.14 V	AUTO/SELF REFRESH
SUU1G8Z21CD8SA-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	7.5 mm	8589934592 bit						4,8	11 mm
SUU1G8Z01AD8WE-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	8 mm	8589934592 bit						4,8	12 mm
PRN1G8Z91BD8PM-083E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1200 MHz	9 mm	8589934592 bit						4,8	13.2 mm
PRN1G8Z91BD8PM-93E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	9 mm	8589934592 bit						4,8	13.2 mm
PRA64M16ZD8WBU-093E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1067.23 MHz	8 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					14 mm
SUU1G16Z22AD8RC-093TP	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1067 MHz	10 mm	17179869184 bit	1.14 V					4,8	13 mm
PRA1G8Z21ED8VA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78			1333 MHz	10 mm	8589934592 bit						4,8	11 mm
PRN1024M8Z91BD8PMF-083	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1200 MHz	9 mm	8589934592 bit						4,8	13.2 mm
PRA64M16ZD8HBA-062E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					14 mm
PRN512M16Z91BD8HA-93E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words	4,8		COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.2 mm	1067 MHz	9 mm	8589934592 bit						4,8	14 mm
PRN2G8Z22AD8VA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2147483648 words	4,8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1333 MHz	10 mm	17179869184 bit	1.14 V					4,8	11 mm
EDY4016AABG-DR-F-R	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	256MX16	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1				13.5 mm
PRN4096M4ZD8DVN-093H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	4294967296 words		YES		1.2	4				95 Cel	4GX4	4G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1067.23 MHz		17179869184 bit	1.14 V	AUTO/SELF REFRESH
PRM1G8Z01BD8WE-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	8 mm	8589934592 bit						4,8	12 mm
PRA1G8Z11CD8SA-083E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1200 MHz	7.5 mm	8589934592 bit						4,8	11 mm
SUU512M16Z21CD8TB-093TP	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words	4,8		COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.2 mm	1067 MHz	7.5 mm	8589934592 bit						4,8	13 mm
PRM64M16ZD8WBU-083	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200.48 MHz	8 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					14 mm
SUU64M16ZD8HBA-068	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1466.27 MHz	9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					14 mm
SUM512M16Z01AD8JY-093DG	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words	4,8		COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.2 mm	1067 MHz	8 mm	8589934592 bit						4,8	14 mm
PRM64M16ZD8WBU-075	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	1GX16	1G	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333.33 MHz	8 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					14 mm
PRN4096M16ZD8CLU-075H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	4294967296 words		YES		1.2	8				95 Cel	4GX8	4G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1333.33 MHz		34359738368 bit	1.14 V	AUTO/SELF REFRESH
PRM2048M8ZD8DVN-083J	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2147483648 words		YES		1.2	8				95 Cel	2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz		17179869184 bit	1.14 V	AUTO/SELF REFRESH
PRN4096M4ZD8DVN-075H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	4294967296 words		YES		1.2	4				95 Cel	4GX4	4G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1333.33 MHz		17179869184 bit	1.14 V	AUTO/SELF REFRESH
SUU1G8Z21CD8SA-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1073741824 words	4,8		COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	7.5 mm	8589934592 bit						4,8	11 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.