DDR4 DRAM DRAM 722

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT40A1G8SA-062E:R	Micron Technology	DDR4 DRAM		78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32	.8 mm	95 Cel	NO		1GX8	1G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT40A1G16RC-062E:BTR	Micron Technology	DDR4 DRAM																															Tin/Silver/Copper (Sn/Ag/Cu)												e1	30	260
MT40A1G16KD-062EIT:ETR	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel			1GX16	1G		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13 mm
MT40A1G16KNR-062E:E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words				1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel			1GX16	1G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		7.5 mm	17179869184 bit	1.14 V	AUTO REFRESH	e1	30	260			13.5 mm
MT40A1G8SA-062EAUT:E	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	200 mA	1073741824 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	125 Cel		3-STATE	1GX8	1G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH				.022 Amp	8	11 mm
MT40A1G8SA-062EAAT:E	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	195 mA	1073741824 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	105 Cel		3-STATE	1GX8	1G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.02 Amp	8	11 mm
MT40A512M16TB-062E:J	Micron Technology	DDR4 DRAM		96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	NO		512MX16	512M		0 Cel		BOTTOM		R-PBGA-B96		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	13.5 mm
MT40A2G8NRE-083E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel			2GX8	2G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm	17179869184 bit	1.14 V	SELF REFRESH						12 mm
MT53D1024M32D4DT-053AAT:D	Micron Technology	DDR4 DRAM			BGA		UNSPECIFIED	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words					32	GRID ARRAY						1GX32	1G				BOTTOM	1	X-PBGA-B						34359738368 bit				NOT SPECIFIED	NOT SPECIFIED
MT40A1G16KNR-075:ETR	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	360 mA	1073741824 words		YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel			1GX16	1G		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333 MHz	7.5 mm	17179869184 bit	1.14 V			NOT SPECIFIED	NOT SPECIFIED	.036 Amp		13.5 mm
MT40A1G16RC-062E:B	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel			1GX16	1G	1.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	10 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13 mm
MT40A2G8JC-062E:E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel			2GX8	2G	1.14 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
IS43QR16256B-083RBLI	Integrated Silicon Solution	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	375 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1200.48 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH				.058 Amp	8	13.5 mm
MT40A512M16JY-083EIT:BTR	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel			512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			14 mm
IS43QR16256B-083RBLI-TR	Integrated Silicon Solution	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	375 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel			256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.26 V	1.2 mm	1200.48 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		30	260	.058 Amp	8	13.5 mm
MT40A256M16GE-083EAIT:BTR	Micron Technology	DDR4 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	256MX16	256M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1200.4 MHz	9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	14 mm
MT40A512M8SA-062EIT:F	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel			512MX8	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			11 mm
MT40A1G8WE-083EAIT:BTR	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	138 mA	1073741824 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel			1GX8	1G		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1200.4 MHz	8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	8	12 mm
MT40A512M16JY-083EAIT:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	252 mA	536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1200 MHz	8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	8	14 mm
MT40A1G8SA-062EIT:R	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel			1GX8	1G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT40A512M16JY-083EAAT:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	254 mA	536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	105 Cel		3-STATE	512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1200 MHz	8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.028 Amp	8	14 mm
K4A8G165WC-BCTD	Samsung	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	204 mA	536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.011 Amp	8	13.3 mm
MT40A1G8SA-062E:ETR	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel			1GX8	1G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			11 mm
MT40A256M16GE-083EAIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	69 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	256MX16	256M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.057 Amp	8	14 mm
MT40A2G16SKL-062E:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	392 mA	2147483648 words		YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel			2GX16	2G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	10.5 mm	34359738368 bit	1.14 V		e1	30	260	.086 Amp		13 mm
MT40A2G8VA-062EIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel			2GX8	2G	1.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	10 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
H5AN8G6NDJR-XNC	Sk Hynix	DDR4 DRAM		96			RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	63 mA	536870912 words	4,8	YES	COMMON	1.2	16		BGA96,9X16,32	.8 mm	85 Cel			512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V		1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH				.033 Amp	4,8	13 mm	3200 ns
MT40A256M16GE-083EAUT:B	Micron Technology	DDR4 DRAM	AUTOMOTIVE	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	76 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	125 Cel		3-STATE	256MX16	256M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.062 Amp	8	14 mm
MT40A2G16TBB-062E:F	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	400 mA	2147483648 words		YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel			2GX16	2G		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	7.5 mm	34359738368 bit	1.14 V			30	260	.076 Amp		13 mm
MT53D1024M32D4DT-053AAT:DTR	Micron Technology	DDR4 DRAM																																												NOT SPECIFIED	NOT SPECIFIED
MT40A2G8SA-062E:F	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel			2GX8	2G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT40A1G8SA-062E:J	Micron Technology	DDR4 DRAM		78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32	.8 mm	95 Cel	NO		1GX8	1G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
IS43QR16256B-083RBL	Integrated Silicon Solution	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	375 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	256MX16	256M	1.14 V	0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1200.48 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH			260	.058 Amp	8	13.5 mm
MT40A2G8AG-062EAUT:F	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	125 Cel			2GX8	2G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT40A512M8RH-083E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel			512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.5 mm
MT40A512M8SA-062E:F	Micron Technology	DDR4 DRAM																															TIN SILVER COPPER												e1	30	260
IS43QR16256B-075UBL	Integrated Silicon Solution	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	385 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	256MX16	256M	1.14 V	0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333.33 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH			260	.062 Amp	8	13.5 mm
IS43QR16256B-075UBLI	Integrated Silicon Solution	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	385 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333.33 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH			260	.062 Amp	8	13.5 mm
MT40A256M16GE-075E:B	Micron Technology	DDR4 DRAM	COMMERCIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	70 Cel			256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH						14 mm
MT40A256M16LY-075:F	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel			256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT40A512M8SA-075:F	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel			512MX8	512M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			11 mm
NT5AD512M16A4-HRI	Nanya Technology	DDR4 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	4,8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					4,8	13 mm
K4A4G165WE-BIWE	Samsung	DDR4 DRAM	INDUSTRIAL	96			RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL			268435456 words				1.2	16				95 Cel			256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96						4294967296 bit
K4A4G165WF-BCTD	Samsung	DDR4 DRAM	OTHER	96			RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL			268435456 words				1.2	16				85 Cel			256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96						4294967296 bit
MT40A1G16HBA-083E:A	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel			1GX16	1G		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT40A1G8WE-075E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	63 mA	1073741824 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32	.8 mm	95 Cel			1GX8	1G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1333.33 MHz	8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH				.046 Amp	8	12 mm
MT40A1G8WE-075E:BTR	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	63 mA	1073741824 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32	.8 mm	95 Cel			1GX8	1G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1333.33 MHz	8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.046 Amp	8	12 mm
MT40A1G8WE-075E:D	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel			1GX8	1G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH						12 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.