DDR4 DRAM MODULE DRAM 262

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length
M471A2K43CB1-CTD	Samsung	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1320 mA	2147483648 words		YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM260,20	.5 mm	95 Cel	3-STATE	2GX64	2G	0 Cel	DUAL	1	R-XDMA-N260	1.26 V	30.15 mm	1333 MHz	3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.176 Amp		69.6 mm
M393A4G43AB3-CWE	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			34359738368 words				1.2	8	MICROELECTRONIC ASSEMBLY					32GX8	32G		DUAL	1	R-XDMA-N					274877906944 bit
M393A4G43AB3-CVF	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			34359738368 words				1.2	8	MICROELECTRONIC ASSEMBLY					32GX8	32G		DUAL	1	R-XDMA-N					274877906944 bit
M378A4G43MB1-CTD	Samsung	DDR4 DRAM MODULE
M386ABG40M5B-CYF	Samsung	DDR4 DRAM MODULE
M386AAG40MM2-CVF	Samsung	DDR4 DRAM MODULE
M391A4G43MB1-CTD	Samsung	DDR4 DRAM MODULE
M378A1K43DB2-CTD	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1480 mA	1073741824 words	8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33	.85 mm	95 Cel	3-STATE	1GX64	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.25 mm	1333 MHz	2.7 mm	68719476736 bit	1.14 V				.232 Amp	8	133.35 mm
M386AAG40MMB-CVF	Samsung	DDR4 DRAM MODULE
M386ABG40M50-CYF	Samsung	DDR4 DRAM MODULE
M393A2K40CB2-CTD	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1102 mA	2147483648 words	4,8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33	.85 mm			2GX72	2G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1333 MHz	4.3 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.845 Amp	4,8	133.35 mm
M378A5244CB0-CTD	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	816 mA	536870912 words	4,8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33	.85 mm			512MX64	512M		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1333 MHz	2.61 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.084 Amp	4,8	133.35 mm
M474A4G43AB1-CTD	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			34359738368 words				1.2	8	MICROELECTRONIC ASSEMBLY					32GX8	32G		DUAL	1	R-XDMA-N					274877906944 bit
M393A2K43DB2-CVF	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words				1.2	8	MICROELECTRONIC ASSEMBLY					16GX8	16G		DUAL	1	R-XDMA-N					137438953472 bit
M474A4G43MB1-CTD	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			34359738368 words				1.2	8	MICROELECTRONIC ASSEMBLY					32GX8	32G		DUAL	1	R-XDMA-N					274877906944 bit
M393AAK40B41-CTC	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS				YES		1.2	72	MICROELECTRONIC ASSEMBLY					16GX72	16G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		4.1 mm		1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M474A1K43DB1-CVF	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD			8589934592 words				1.2	8	MICROELECTRONIC ASSEMBLY					8GX8	8G		DUAL	1	R-XDMA-N					68719476736 bit
M393A2K43CB2-CTD	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words				1.2	8	MICROELECTRONIC ASSEMBLY					16GX8	16G		DUAL	1	R-XDMA-N					137438953472 bit
M474A1K43BB1-CTD	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD			8589934592 words				1.2	8	MICROELECTRONIC ASSEMBLY					8GX8	8G		DUAL	1	R-XDMA-N					68719476736 bit
M393AAK40B42-CWD	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		17179869184 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY					16GX72	16G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		4.3 mm	1236950581248 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M378A2K43CB1-CPB	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1616 mA	2147483648 words	4,8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33	.85 mm			2GX64	2G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1067 MHz	3.9 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.272 Amp	4,8	133.35 mm
M378A1K43CB2-CTD	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1480 mA	1073741824 words	4,8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33	.85 mm			1GX64	1G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1333 MHz	2.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.168 Amp	4,8	133.35 mm
M474A2K43DB1-CWE	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words				1.2	8	MICROELECTRONIC ASSEMBLY					16GX8	16G		DUAL	1	R-XDMA-N					137438953472 bit
M378A1K43CB2-CPB	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1480 mA	1073741824 words	4,8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33	.85 mm			1GX64	1G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1067 MHz	2.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.136 Amp	4,8	133.35 mm
M474A4G43AB1-CWE	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			34359738368 words				1.2	8	MICROELECTRONIC ASSEMBLY					32GX8	32G		DUAL	1	R-XDMA-N					274877906944 bit
M378A5244CB0-CPB	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	816 mA	536870912 words	4,8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33	.85 mm			512MX64	512M		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1067 MHz	2.61 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.068 Amp	4,8	133.35 mm
M378A2K43CB1-CTD	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1624 mA	2147483648 words	4,8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33	.85 mm			2GX64	2G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1333 MHz	3.9 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.336 Amp	4,8	133.35 mm
M474A2K43DB1-CVF	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words				1.2	8	MICROELECTRONIC ASSEMBLY					16GX8	16G		DUAL	1	R-XDMA-N					137438953472 bit
M474A2K43BB1-CRC	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words				1.2	8	MICROELECTRONIC ASSEMBLY					16GX8	16G		DUAL	1	R-XDMA-N					137438953472 bit
M378A2K43CB1-CRC	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1624 mA	2147483648 words	4,8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33	.85 mm			2GX64	2G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1200 MHz	3.9 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.288 Amp	4,8	133.35 mm
M474A4G43AB1-CVF	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			34359738368 words				1.2	8	MICROELECTRONIC ASSEMBLY					32GX8	32G		DUAL	1	R-XDMA-N					274877906944 bit
M474A1G43EB1-CRC	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			8589934592 words				1.2	8	MICROELECTRONIC ASSEMBLY					8GX8	8G		DUAL	1	R-XDMA-N					68719476736 bit
M474A2K43BB1-CTD	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words				1.2	8	MICROELECTRONIC ASSEMBLY					16GX8	16G		DUAL	1	R-XDMA-N					137438953472 bit
M393AAK40B41-CRB	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS				YES		1.2	72	MICROELECTRONIC ASSEMBLY					16GX72	16G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		4.1 mm		1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA9ASF2G72HZ-3G2F1	Micron Technology	DDR4 DRAM MODULE
MTA8ATF1G64HZ-2G6XX	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel		1GX64	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	30	260			69.6 mm
MTA72ASS16G72LZ-3G2B1	Micron Technology	DDR4 DRAM MODULE
MTA18ADF2G72PZ-3G2R1	Micron Technology	DDR4 DRAM MODULE
MTA18ASF4G72AZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		288			UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES			72				95 Cel		4GX72	4G	0 Cel	DUAL	1	R-XDMA-N288			1600 MHz		309237645312 bit		AUTO/SELF REFRESH
MTA9ASF1G72PZ-3G2E2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1710 mA	1073741824 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	1GX72	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1612 MHz	3.9 mm	77309411328 bit	1.14 V				.198 Amp	8	133.35 mm
MTA9ASF2G72PZ-3G2B1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES			72	MICROELECTRONIC ASSEMBLY			95 Cel		2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288		31.4 mm		3.9 mm	154618822656 bit		AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA8ATF2G64AZ-3G2XX	Micron Technology	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1336 mA	2147483648 words		YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel		2GX64	2G	0 Cel	DUAL	1	R-XDMA-N288		31.25 mm	1600 MHz		137438953472 bit		AUTO/SELF REFRESH			.304 Amp		133.35 mm
MTA18ASF2G72PZ-3G2E2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4140 mA	2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1600 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.396 Amp	8	133.35 mm
MTA18ASF4G72AZ-2G6B1	Micron Technology	DDR4 DRAM MODULE
MTA18ASF2G72AZ-2G6XX	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY		.85 mm	85 Cel		2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF4G72AZ-2G6F1	Micron Technology	DDR4 DRAM MODULE		288			UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES			72				95 Cel		4GX72	4G	0 Cel	DUAL	1	R-XDMA-N288			1333.33 MHz		309237645312 bit		AUTO/SELF REFRESH
MTA18ASF2G72AZ-2G3XX	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY		.85 mm	85 Cel		2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA16ATF4G64AZ-3G2B1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words					64	MICROELECTRONIC ASSEMBLY			95 Cel		4GX64	4G	0 Cel	DUAL	1	R-XDMA-N288					274877906944 bit

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.