DDR4 DRAM MODULE DRAM 262

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length
MTA18ASF4G72PZ-2G9XX	Micron Technology	DDR4 DRAM MODULE
MTA8ATF2G64AZ-2G6F1	Micron Technology	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1304 mA	2147483648 words		YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel	2GX64	2G	0 Cel	DUAL	1	R-XDMA-N288		31.25 mm	1333.3 MHz		137438953472 bit		AUTO/SELF REFRESH			.304 Amp		133.35 mm
MTA18ASF2G72HBZ-3G2E1	Micron Technology	DDR4 DRAM MODULE		260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1989 mA	2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			105 Cel	2GX72	2G	-40 Cel	ZIG-ZAG	1	R-XZMA-N260		30.15 mm	1600 MHz	3.7 mm	154618822656 bit		AUTO/SELF REFRESH; WD-MAX			.468 Amp		69.6 mm
CT16G4DFD8266	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS	2200 mA	2147483648 words		NO	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33	.85 mm	85 Cel	2GX64	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.25 mm	2666 MHz	3.9 mm	137438953472 bit	1.14 V				.048 Amp		133.35 mm
MTA9ASF2G72AZ-3G2B1	Micron Technology	DDR4 DRAM MODULE
MTA9ADF1G72AKIZ-3G2XX	Micron Technology	DDR4 DRAM MODULE
MTA4ATF51264AZ-2G6XX	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel	512MX64	512M	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		2.7 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA36ASS4G72XF1Z-2G9PR1AB	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel	4GX72	4G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		5.8 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MTA18ASF2G72XF1Z-2G6V21AB	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		5.8 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MTA9ADF1G72PZ-3G2XX	Micron Technology	DDR4 DRAM MODULE
MTA16ATF4G64AZ-2G6XX	Micron Technology	DDR4 DRAM MODULE
MTA9ASF1G72AZ-3G2R1	Micron Technology	DDR4 DRAM MODULE
MTA8ATF1G64HZ-3G2XX	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel	1GX64	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED			69.6 mm
MTA18ASF4G72AZ-3G2XX	Micron Technology	DDR4 DRAM MODULE		288			UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES			72				95 Cel	4GX72	4G	0 Cel	DUAL	1	R-XDMA-N288			1600 MHz		309237645312 bit		AUTO/SELF REFRESH
MTA18ADF2G72PDZ-2G3XX	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	18.9 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA9ASF1G72HZ-3G2XX	Micron Technology	DDR4 DRAM MODULE
MTA18ASF2G72HZ-3G2XX	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N260	1.26 V	30.13 mm		3.7 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED			69.6 mm
MTA18ASF4G72PZ-3G2XX	Micron Technology	DDR4 DRAM MODULE
MTA8ATF2G64AZ-3G2B1	Micron Technology	DDR4 DRAM MODULE
MTA18ADF2G72AZ-3G2R1	Micron Technology	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1737 mA	2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	18.9 mm	1612.9 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.54 Amp	8	133.35 mm
MTA18ADF2G72PZ-2G6XX	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY		.85 mm	85 Cel	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	18.9 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MTA18ADF2G72AZ-2G3XX	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	18.9 mm	1204.8 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.