DDR4 DRAM MODULE DRAM 262

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length
MTA18ASF2G72PDZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1600 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA18ASF2G72PDZ-2G6E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1333 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA18ASF2G72PDZ-2G9E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1466 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA9ASF1G72PZ-2G9E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1665 mA	1073741824 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel	OPEN-DRAIN	1GX72	1G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1466 MHz	3.9 mm		77309411328 bit	1.14 V				.198 Amp	8	133.35 mm
HMAA8GR7AJR4N-XN	Sk Hynix	DDR4 DRAM MODULE
MTA18ASF4G72HZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1845 mA	4294967296 words		YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY				95 Cel		4GX72	4G		0 Cel	ZIG-ZAG	1	R-XZMA-N260		30.15 mm	1612.9 MHz	3.7 mm		309237645312 bit		AUTO/SELF REFRESH; WD-MAX			.684 Amp		69.6 mm
HMA84GR7DJR4N-XN	Sk Hynix	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33		.85 mm	85 Cel		4GX72	4G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	30.88 mm	1600 MHz	3.98 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
M393A4K40DB3-CWE	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words				1.2		72	MICROELECTRONIC ASSEMBLY						4GX72	4G			DUAL	1	R-XDMA-N288						274877906944 bit
MTA8ATF2G64HZ-3G2F1	Micron Technology	DDR4 DRAM MODULE
MTA8ATF1G64HZ-3G2R1	Micron Technology	DDR4 DRAM MODULE
MTA4ATF1G64HZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES	COMMON			64	MICROELECTRONIC ASSEMBLY				95 Cel		1GX64	1G		0 Cel	DUAL	1	R-XDMA-N260			1600 MHz			68719476736 bit		AUTO/SELF REFRESH	30	260
MTA9ASF1G72HZ-3G2R1	Micron Technology	DDR4 DRAM MODULE
MTA18ASF2G72PDZ-3G2J3	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1600 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA16ATF4G64HZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES				64	MICROELECTRONIC ASSEMBLY	DIMM260,20		.5 mm	95 Cel		4GX64	4G		0 Cel	DUAL	1	R-XDMA-N260		30.15 mm		3.7 mm		274877906944 bit		AUTO REFRESH AND SELF REFRESH; WIDTH MAX					69.6 mm
M471A1K43DB1-CTD	Samsung	DDR4 DRAM MODULE		260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words				1.2		64	MICROELECTRONIC ASSEMBLY	DIMM260,20		.5 mm	85 Cel		1GX64	1G		0 Cel	DUAL	1	R-XDMA-N260		30 mm	1333 MHz	3.7 mm		68719476736 bit		WD-MAX; SEATED HGT-NOM					69.6 mm
MTA18ASF2G72PZ-3G2J3	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1600 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA18ASF4G72PZ-3G2B1	Micron Technology	DDR4 DRAM MODULE
MTA4ATF1G64AZ-3G2F1	Micron Technology	DDR4 DRAM MODULE
MTA4ATF51264HZ-3G2R1	Micron Technology	DDR4 DRAM MODULE
MTA72ASS16G72PSZ-3S2B1	Micron Technology	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS		17179869184 words			COMMON	1.2		72	MICROELECTRONIC ASSEMBLY				95 Cel		16GX72	16G		0 Cel	DUAL		R-XDMA-N288			1600 MHz			1236950581248 bit
MTA8ATF1G64AZ-2G6E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel		1GX64	1G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1333 MHz	2.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA8ATF2G64AZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1336 mA	2147483648 words		YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY				95 Cel		2GX64	2G		0 Cel	DUAL	1	R-XDMA-N288		31.25 mm	1600 MHz			137438953472 bit		AUTO/SELF REFRESH			.304 Amp		133.35 mm
M378A1K43CB2-CRC	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1480 mA	1073741824 words	4,8	YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY	DIMM288,33		.85 mm			1GX64	1G			DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1200 MHz	2.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.144 Amp	4,8	133.35 mm
M378A2K43DB1-CTD	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1624 mA	2147483648 words	8	YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY	DIMM288,33		.85 mm	95 Cel	3-STATE	2GX64	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.25 mm	1333 MHz	3.9 mm		137438953472 bit	1.14 V				.464 Amp	8	133.35 mm
M393A2K43CB2-CVF	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words				1.2		8	MICROELECTRONIC ASSEMBLY						16GX8	16G			DUAL	1	R-XDMA-N						137438953472 bit
M393A2K43DB3-CWE	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words				1.2		8	MICROELECTRONIC ASSEMBLY						16GX8	16G			DUAL	1	R-XDMA-N						137438953472 bit
M471A4G43MB1-CTD	Samsung	DDR4 DRAM MODULE
MTA16ATF2G64AZ-3G2J1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY				95 Cel		2GX64	2G	1.14 V	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1612 MHz	3.9 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED		8	133.35 mm
MTA18ASF2G72HZ-2G6E1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1881 mA	2147483648 words	4,8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY				95 Cel	3-STATE	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N260	1.26 V	30.15 mm	1333 MHz	3.7 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.45 Amp	4,8	69.6 mm
MTA18ASF2G72PZ-2G9E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3870 mA	2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1466 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.396 Amp	8	133.35 mm
MTA18ASF4G72PZ-3G2F1	Micron Technology	DDR4 DRAM MODULE
MTA36ASF8G72PZ-3G2B2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				95 Cel		8GX72	8G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		618475290624 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA8ATF2G64HZ-3G2E2	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1480 mA	2147483648 words		YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY	DIMM260,20		.5 mm	95 Cel		2GX64	2G		0 Cel	DUAL	1	R-XDMA-N260		30.15 mm	1600 MHz	3.7 mm		137438953472 bit		AUTO/SELF REFRESH; WD-MAX			.304 Amp		69.6 mm
MTA9ASF1G72PZ-3G2R1	Micron Technology	DDR4 DRAM MODULE
M474A2K43BB1-CWE	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words				1.2		8	MICROELECTRONIC ASSEMBLY						16GX8	16G			DUAL	1	R-XDMA-N						137438953472 bit
M474A1G43DB0-CRC	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			8589934592 words				1.2		8	MICROELECTRONIC ASSEMBLY						8GX8	8G			DUAL	1	R-XDMA-N						68719476736 bit
M393A4K40BB0-CPB	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			34359738368 words				1.2	1.2	8	MICROELECTRONIC ASSEMBLY		Other Memory ICs				32GX8	32G			DUAL	1	R-XDMA-N					Not Qualified	274877906944 bit			NOT SPECIFIED	NOT SPECIFIED
M474A1K43DB1-CTD	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD			8589934592 words				1.2		8	MICROELECTRONIC ASSEMBLY						8GX8	8G			DUAL	1	R-XDMA-N						68719476736 bit
M474A2K43DB1-CTD	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words				1.2		8	MICROELECTRONIC ASSEMBLY						16GX8	16G			DUAL	1	R-XDMA-N						137438953472 bit
M474A1G43EB1-CPB	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			8589934592 words				1.2		8	MICROELECTRONIC ASSEMBLY						8GX8	8G			DUAL	1	R-XDMA-N						68719476736 bit
M393A4G40AB3-CWE	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD			34359738368 words				1.2		8	MICROELECTRONIC ASSEMBLY						32GX8	32G			DUAL	1	R-XDMA-N						274877906944 bit
M393A2K43DB2-CWE	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words				1.2		8	MICROELECTRONIC ASSEMBLY						16GX8	16G			DUAL	1	R-XDMA-N						137438953472 bit
M393A2K43DB2-CTD	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words				1.2		8	MICROELECTRONIC ASSEMBLY						16GX8	16G			DUAL	1	R-XDMA-N						137438953472 bit
M474A1G43DB0-CPB	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			8589934592 words				1.2	1.2,2.5	8	MICROELECTRONIC ASSEMBLY		Other Memory ICs				8GX8	8G			DUAL	1	R-XDMA-N					Not Qualified	68719476736 bit			NOT SPECIFIED	NOT SPECIFIED
M378A5244CB0-CRC	Samsung	DDR4 DRAM MODULE		288	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	816 mA	536870912 words	4,8	YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY	DIMM288,33		.85 mm			512MX64	512M			DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1200 MHz	2.61 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.068 Amp	4,8	133.35 mm
M393A4G40AB3-CVF	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD			34359738368 words				1.2		8	MICROELECTRONIC ASSEMBLY						32GX8	32G			DUAL	1	R-XDMA-N						274877906944 bit
M474A1K43DB1-CWE	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD			8589934592 words				1.2		8	MICROELECTRONIC ASSEMBLY						8GX8	8G			DUAL	1	R-XDMA-N						68719476736 bit
M474A2K43BB1-CVF	Samsung	DDR4 DRAM MODULE			DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words				1.2		8	MICROELECTRONIC ASSEMBLY						16GX8	16G			DUAL	1	R-XDMA-N						137438953472 bit

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.