DRAM MODULE DRAM 394

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
THM91620S-80	Toshiba	DRAM MODULE									1	CMOS				16777216 words					9							16MX9	16M				1							Not Qualified	150994944 bit							80 ns
THM161000ASG-70	Toshiba	DRAM MODULE									1					1048576 words					16							1MX16	1M				1							Not Qualified	16777216 bit							70 ns
THM361000AS-60	Toshiba	DRAM MODULE									1	CMOS				1048576 words					36							1MX36	1M				1							Not Qualified	37748736 bit							60 ns
THM98020ATS-70	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			8388608 words					9	SMALL OUTLINE						8MX9	8M			DUAL	1	R-PDSO-G30						Not Qualified	75497472 bit							70 ns
THM362060CSG-50	Toshiba	DRAM MODULE									1	CMOS				2097152 words					36							2MX36	2M				1							Not Qualified	75497472 bit							50 ns
THM84000CL-50	Toshiba	DRAM MODULE									1	CMOS				4194304 words					8							4MX8	4M				1							Not Qualified	33554432 bit							50 ns
THM181000ASG-80	Toshiba	DRAM MODULE									1					1048576 words					18							1MX18	1M				1							Not Qualified	18874368 bit							80 ns
THM321000ATS-60	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words					32	SMALL OUTLINE						1MX32	1M			DUAL	1	R-PDSO-G72						Not Qualified	33554432 bit							60 ns
THM91620TS-60	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			16777216 words					9	SMALL OUTLINE						16MX9	16M			DUAL	1	R-PDSO-G30						Not Qualified	150994944 bit							60 ns
THM94000AS-70	Toshiba	DRAM MODULE									1					4194304 words					9							4MX9	4M				1							Not Qualified	37748736 bit							70 ns
M393B1K70CH0-YF8	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4050 mA	1073741824 words	YES	COMMON	1.5	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH		260	1 Amp	133.35 mm	.3 ns
KMM466S104BT-F0	Samsung	DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	BURST AND FAST PAGE	NO	1	CMOS	NO LEAD	SYNCHRONOUS	720 mA	1048576 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL	1	R-PDMA-N144		3.6 V	25.4 mm	100 MHz	3.81 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM			.002 Amp	67.6 mm	7 ns
KMM5364005CKG-60	Samsung	DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		36	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		4MX36	4M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	25.53 mm		5.08 mm		150994944 bit	4.5 V	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH; WD-MAX				107.95 mm	60 ns
M393B1K70CH0-CH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4940 mA	1073741824 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	4 mm	667 MHz	30 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH		260	1.042 Amp	133.35 mm	.255 ns
KMM5364005CK-60	Samsung	DRAM MODULE
KMM332F803BS-L60	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		8MX32	8M	0 Cel		ZIG-ZAG	1	R-XZMA-N72		3.6 V	31.88 mm		2.54 mm		268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; WD-MAX				59.68 mm	60 ns
M393B2K70CM0-CH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6768 mA	2147483648 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	4 mm	667 MHz	30 mm	Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH		260	1.962 Amp	133.35 mm	.255 ns
KMM332V204BT-L5	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	222 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		DUAL	1	R-PDMA-N72		3.6 V	25.4 mm		3.81 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; WD-MAX; SEATED HGT-NOM			.0008 Amp	59.68 mm	50 ns
M393B5273CH0-CH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2915 mA	536870912 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	4 mm	667 MHz	30 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH		260	.826 Amp	133.35 mm	.255 ns
KMM332V404AZ-L5	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	300 mA	4194304 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		DUAL	1	R-PDMA-N72		3.6 V	25.4 mm		2.54 mm	Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; WD-MAX; SEATED HGT-NOM			.0006 Amp	59.68 mm	50 ns
M393B1K70EB0-YH9	Samsung	DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm			1GX72	1G			DUAL	1	R-XDMA-N240		1.45 V	30.15 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX				133.35 mm
KMM5322104CKU-50	Samsung	DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words	YES		5		32	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	24.63 mm		5.08 mm		67108864 bit	4.5 V	SELF REFRESH; WD-MAX				107.95 mm	50 ns
KMM5364005CKG-50	Samsung	DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		36	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		4MX36	4M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	25.53 mm		5.08 mm		150994944 bit	4.5 V	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH; WD-MAX				107.95 mm	50 ns
KMM366S203CT-GH0	Samsung	DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		2MX64	2M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	31.88 mm		2.54 mm		134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX				133.35 mm	6 ns
KMM332V404BS-L5	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	240 mA	4194304 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		DUAL	1	R-PDMA-N72		3.6 V	25.4 mm		2.54 mm	Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; WD-MAX; SEATED HGT-NOM			.001 Amp	59.68 mm	50 ns
M393B5270CH0-CF8	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3690 mA	536870912 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm	533 MHz	30 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH		260	.786 Amp	133.35 mm	.3 ns
KMM5361205C2WG-50	Samsung	DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words	YES		5		36	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		1MX36	1M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	19.18 mm		5.08 mm		37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; WD-MAX				107.95 mm	50 ns
M393B2K70CM0-YH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6228 mA	2147483648 words	YES	COMMON	1.5	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH		260	1.962 Amp	133.35 mm	.255 ns
KMM332F203BS-L5	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	400 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N72		3.6 V	25.4 mm		2.54 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; WD-MAX; SEATED HGT-NOM	e4		.0012 Amp	59.68 mm	50 ns
KMM466S424CT-F00	Samsung	DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY			.8 mm	70 Cel		4MX64	4M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V	25.53 mm		3.81 mm		268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX				67.6 mm
M393B5273CH0-YF8	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2340 mA	536870912 words	YES	COMMON	1.5	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH		260	.786 Amp	133.35 mm	.3 ns
M393B1K70CH0-CF8	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4230 mA	1073741824 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm	533 MHz	30 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH		260	1.002 Amp	133.35 mm	.3 ns
KMM332V404BS-L6	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	220 mA	4194304 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		DUAL	1	R-PDMA-N72		3.6 V	25.4 mm		3.81 mm	Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; WD-MAX; SEATED HGT-NOM			.001 Amp	59.68 mm	60 ns
KMM5322204C2W-60	Samsung	DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words	YES		5		32	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	19.18 mm		8.89 mm		67108864 bit	4.5 V	SELF REFRESH; WD-MAX				107.95 mm	60 ns
KMM5322104CKU-60	Samsung	DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words	YES		5		32	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	24.63 mm		5.08 mm		67108864 bit	4.5 V	SELF REFRESH; WD-MAX				107.95 mm	60 ns
M393B5270CH0-CH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4310 mA	536870912 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm	667 MHz	30 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH		260	.826 Amp	133.35 mm	.255 ns
KMM332F124BT-L5	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	320 mA	1048576 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N72		3.6 V	25.4 mm		2.54 mm	Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; WD-MAX; SEATED HGT-NOM	e4		.0004 Amp	59.68 mm	50 ns
KMM5364105CK-50	Samsung	DRAM MODULE
KMM332V404BZ-L6	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	220 mA	4194304 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		DUAL	1	R-PDMA-N72		3.6 V	25.4 mm		2.54 mm	Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; WD-MAX; SEATED HGT-NOM			.001 Amp	59.68 mm	60 ns
KMM466S204BT-F0	Samsung	DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	BURST AND FAST PAGE	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL	1	R-PDMA-N144		3.6 V	26.67 mm	100 MHz	3.81 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM			.004 Amp	67.6 mm	7 ns
M393B5270CH0-YH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4040 mA	536870912 words	YES	COMMON	1.5	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH		260	.826 Amp	133.35 mm	.255 ns
KMM374S203CT-G80	Samsung	DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		2MX72	2M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	35.055 mm		2.54 mm		150994944 bit	3 V	AUTO/SELF REFRESH; WD-MAX				133.35 mm	6 ns
M393B1K73CH0-CH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3545 mA	1073741824 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm	667 MHz	30 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH		260	1.042 Amp	133.35 mm	.255 ns
KMM5361205C2W-50	Samsung	DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words	YES		5		36	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		1MX36	1M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	19.18 mm		5.08 mm		37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; WD-MAX				107.95 mm	50 ns
M393B5773CH0-CK0	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2695 mA	268435456 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm	800 MHz	30 mm	Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH		260		133.35 mm	.225 ns
KMM466S204BT-F2	Samsung	DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	BURST AND FAST PAGE	NO	1	CMOS	NO LEAD	SYNCHRONOUS	720 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL	1	R-PDMA-N144		3.6 V	26.67 mm	83 MHz	3.81 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM			.004 Amp	67.6 mm	8 ns
M393B5773CH0-CH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2600 mA	268435456 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm	667 MHz	30 mm	Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH		260		133.35 mm	.255 ns
KMM332V404BZ-L5	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	240 mA	4194304 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		DUAL	1	R-PDMA-N72		3.6 V	25.4 mm		2.54 mm	Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; WD-MAX; SEATED HGT-NOM			.001 Amp	59.68 mm	50 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.