DRAM MODULE DRAM 394

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Organization	No. of Words Code	Terminal Position	No. of Ports	JESD-30 Code	Qualification	Memory Density	Maximum Access Time
THL32V4010BTG-7	Toshiba	DRAM MODULE	72	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1		GULL WING	4194304 words	3.3	32	SMALL OUTLINE	4MX32	4M	DUAL	1	R-PDSO-G72	Not Qualified	134217728 bit	70 ns
THL32V1010ATG-8L	Toshiba	DRAM MODULE	72	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1		GULL WING	1048576 words	3.3	32	SMALL OUTLINE	1MX32	1M	DUAL	1	R-PDSO-G72	Not Qualified	33554432 bit	80 ns
THM361000ASG-80	Toshiba	DRAM MODULE						1			1048576 words		36		1MX36	1M		1		Not Qualified	37748736 bit	80 ns
THM364080AS-60	Toshiba	DRAM MODULE						1			4194304 words		36		4MX36	4M		1		Not Qualified	150994944 bit	60 ns
THM91620S-70	Toshiba	DRAM MODULE						1			16777216 words		9		16MX9	16M		1		Not Qualified	150994944 bit	70 ns
THM321090CS-50	Toshiba	DRAM MODULE						1	CMOS		1048576 words		32		1MX32	1M		1		Not Qualified	33554432 bit	50 ns
THM88020ATS-70	Toshiba	DRAM MODULE	30	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	8388608 words		8	SMALL OUTLINE	8MX8	8M	DUAL	1	R-PDSO-G30	Not Qualified	67108864 bit	70 ns
THM94020CL-50	Toshiba	DRAM MODULE						1	CMOS		4194304 words		9		4MX9	4M		1		Not Qualified	37748736 bit	50 ns
THM364080AS-70	Toshiba	DRAM MODULE						1			4194304 words		36		4MX36	4M		1		Not Qualified	150994944 bit	70 ns
THM361070CSG-50	Toshiba	DRAM MODULE						1	CMOS		1048576 words		36		1MX36	1M		1		Not Qualified	37748736 bit	50 ns
THM331000AS-70	Toshiba	DRAM MODULE						1	CMOS		1048576 words		33		1MX33	1M		1		Not Qualified	34603008 bit	70 ns
THL32V1070ATG-7	Toshiba	DRAM MODULE	72	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1		GULL WING	1048576 words	3.3	32	SMALL OUTLINE	1MX32	1M	DUAL	1	R-PDSO-G72	Not Qualified	33554432 bit	70 ns
THM84000AL-60	Toshiba	DRAM MODULE						1			4194304 words		8		4MX8	4M		1		Not Qualified	33554432 bit	60 ns
THL321010ATG-6L	Toshiba	DRAM MODULE	72	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1		GULL WING	1048576 words		32	SMALL OUTLINE	1MX32	1M	DUAL	1	R-PDSO-G72	Not Qualified	33554432 bit	60 ns
THM84020CL-50	Toshiba	DRAM MODULE						1	CMOS		4194304 words		8		4MX8	4M		1		Not Qualified	33554432 bit	50 ns
THL321010ATG-7	Toshiba	DRAM MODULE	72	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1		GULL WING	1048576 words		32	SMALL OUTLINE	1MX32	1M	DUAL	1	R-PDSO-G72	Not Qualified	33554432 bit	70 ns
THL321010CTG-5	Toshiba	DRAM MODULE	72	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	1048576 words		32	SMALL OUTLINE	1MX32	1M	DUAL	1	R-PDSO-G72	Not Qualified	33554432 bit	50 ns
THM368020S-80	Toshiba	DRAM MODULE						1	CMOS		8388608 words		36		8MX36	8M		1		Not Qualified	301989888 bit	80 ns
THM321090AS-60	Toshiba	DRAM MODULE						1	CMOS		1048576 words		32		1MX32	1M		1		Not Qualified	33554432 bit	60 ns
THM84000AL-70	Toshiba	DRAM MODULE						1			4194304 words		8		4MX8	4M		1		Not Qualified	33554432 bit	70 ns
TH81070AS-60	Toshiba	DRAM MODULE						1	CMOS		1048576 words		8		1MX8	1M		1		Not Qualified	8388608 bit	60 ns
THM94020AL-70	Toshiba	DRAM MODULE						1			4194304 words		9		4MX9	4M		1		Not Qualified	37748736 bit	70 ns
THM334080CSG-50	Toshiba	DRAM MODULE						1	CMOS		4194304 words		33		4MX33	4M		1		Not Qualified	138412032 bit	50 ns
THM401000ASG-80	Toshiba	DRAM MODULE						1			1048576 words		40		1MX40	1M		1		Not Qualified	41943040 bit	80 ns
THM322080AS-80	Toshiba	DRAM MODULE						1			2097152 words		32		2MX32	2M		1		Not Qualified	67108864 bit	80 ns
TH81070AL-70	Toshiba	DRAM MODULE						1	CMOS		1048576 words		8		1MX8	1M		1		Not Qualified	8388608 bit	70 ns
THM361010AS-70	Toshiba	DRAM MODULE						1	CMOS		1048576 words		36		1MX36	1M		1		Not Qualified	37748736 bit	70 ns
TH32V1010ATS-8	Toshiba	DRAM MODULE	72	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	1048576 words	3.3	32	SMALL OUTLINE	1MX32	1M	DUAL	1	R-PDSO-G72	Not Qualified	33554432 bit	80 ns
THM94000CL-50	Toshiba	DRAM MODULE						1	CMOS		4194304 words		9		4MX9	4M		1		Not Qualified	37748736 bit	50 ns
TH32V1010ATG-8	Toshiba	DRAM MODULE	72	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	1048576 words	3.3	32	SMALL OUTLINE	1MX32	1M	DUAL	1	R-PDSO-G72	Not Qualified	33554432 bit	80 ns
THM334080AS-80	Toshiba	DRAM MODULE						1			4194304 words		33		4MX33	4M		1		Not Qualified	138412032 bit	80 ns
THM401000CSG-50	Toshiba	DRAM MODULE						1	CMOS		1048576 words		40		1MX40	1M		1		Not Qualified	41943040 bit	50 ns
THM364080ASG-80	Toshiba	DRAM MODULE						1			4194304 words		36		4MX36	4M		1		Not Qualified	150994944 bit	80 ns
THM324080ASG-70	Toshiba	DRAM MODULE						1	CMOS		4194304 words		32		4MX32	4M		1		Not Qualified	134217728 bit	70 ns
THL321010ATS-6L	Toshiba	DRAM MODULE	72	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	1048576 words		32	SMALL OUTLINE	1MX32	1M	DUAL	1	R-PDSO-G72	Not Qualified	33554432 bit	60 ns
THM81620TS-80	Toshiba	DRAM MODULE	30	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	16777216 words		8	SMALL OUTLINE	16MX8	16M	DUAL	1	R-PDSO-G30	Not Qualified	134217728 bit	80 ns
THM181000ASG-60	Toshiba	DRAM MODULE						1	CMOS		1048576 words		18		1MX18	1M		1		Not Qualified	18874368 bit	60 ns
THL321010ATG-8	Toshiba	DRAM MODULE	72	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1		GULL WING	1048576 words		32	SMALL OUTLINE	1MX32	1M	DUAL	1	R-PDSO-G72	Not Qualified	33554432 bit	80 ns
THM321000CSG-50	Toshiba	DRAM MODULE						1	CMOS		1048576 words		32		1MX32	1M		1		Not Qualified	33554432 bit	50 ns
THL32V4010BTG-6	Toshiba	DRAM MODULE	72	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1		GULL WING	4194304 words	3.3	32	SMALL OUTLINE	4MX32	4M	DUAL	1	R-PDSO-G72	Not Qualified	134217728 bit	60 ns
THM361070CS-50	Toshiba	DRAM MODULE						1	CMOS		1048576 words		36		1MX36	1M		1		Not Qualified	37748736 bit	50 ns
THM334080CS-50	Toshiba	DRAM MODULE						1	CMOS		4194304 words		33		4MX33	4M		1		Not Qualified	138412032 bit	50 ns
THM334080AS-60	Toshiba	DRAM MODULE						1	CMOS		4194304 words		33		4MX33	4M		1		Not Qualified	138412032 bit	60 ns
THM361020ATSG-60	Toshiba	DRAM MODULE	72	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	1048576 words		36	SMALL OUTLINE	1MX36	1M	DUAL	1	R-PDSO-G72	Not Qualified	37748736 bit	60 ns
THM364080CS-50	Toshiba	DRAM MODULE						1	CMOS		4194304 words		36		4MX36	4M		1		Not Qualified	150994944 bit	50 ns
THL324010TS-7	Toshiba	DRAM MODULE	72	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	4194304 words		32	SMALL OUTLINE	4MX32	4M	DUAL	1	R-PDSO-G72	Not Qualified	134217728 bit	70 ns
THL32V4010BTS-7	Toshiba	DRAM MODULE	72	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	4194304 words	3.3	32	SMALL OUTLINE	4MX32	4M	DUAL	1	R-PDSO-G72	Not Qualified	134217728 bit	70 ns
THM334080AS-70	Toshiba	DRAM MODULE						1	CMOS		4194304 words		33		4MX33	4M		1		Not Qualified	138412032 bit	70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.