Toshiba - TH81070AS-60

  1. Home
  2. Toshiba - TH81070AS-60
TH81070AS-60 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TH81070AS-60
Description DRAM MODULE; No. of Words: 1048576 words; Qualification: Not Qualified; No. of Functions: 1; No. of Ports: 1; Technology: CMOS;
Datasheet TH81070AS-60 Datasheet
NAME DESCRIPTION
No. of Functions: 1
No. of Ports: 1
No. of Words: 1048576 words
Qualification: Not Qualified
Memory Density: 8388608 bit
Organization: 1MX8
Technology: CMOS
Maximum Access Time: 60 ns
No. of Words Code: 1M
Memory IC Type: DRAM MODULE
Memory Width: 8
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IS42S16160G-7TLI by Integrated Silicon Solution

IS42S16160G-7TLI

Integrated Silicon Solution

IS42S16160G-7TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features self-refresh mode and common I/O type, suitable for industrial applications requiring fast memory access and low power consumption.
AS4C16M16SA-6TIN by Alliance Memory

AS4C16M16SA-6TIN

Alliance Memory

AS4C16M16SA-6TIN by Alliance Memory is a 16MX16 Synchronous DRAM with a clock frequency of 166 MHz. It operates at a voltage of 3.3V and has a temperature range of -40 to 85°C. This memory chip is commonly used in industrial applications requiring high-speed data storage and retrieval.
AS4C8M16SA-6TINTR by Alliance Memory

AS4C8M16SA-6TINTR

Alliance Memory

Alliance Memory's AS4C8M16SA-6TINTR is a 8MX16 Synchronous DRAM with 166 MHz clock frequency, operating at -40 to 85 °C. Ideal for industrial applications, it features common I/O type, self-refresh mode, and small outline package style.
MT48LC8M16A2TG-6A:L by Micron Technology

MT48LC8M16A2TG-6A:L

Micron Technology

Micron Technology's MT48LC8M16A2TG-6A:L is a 8MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density.
MT40A1G8WE-083E:B by Micron Technology

MT40A1G8WE-083E:B

Micron Technology

Micron Technology's MT40A1G8WE-083E:B is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in devices like servers and PCs.
MT53E256M32D2FW-046WT:B by Micron Technology

MT53E256M32D2FW-046WT:B

Micron Technology

LPDDR4 DRAM;
M378B5673FH0-CH9 by Samsung

M378B5673FH0-CH9

Samsung

Samsung M378B5673FH0-CH9 DDR DRAM MODULE features 256MX64 organization, operates at 667 MHz clock frequency, and has a memory width of 64. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
K4G323222M-PC60 by Samsung

K4G323222M-PC60

Samsung

Samsung's K4G323222M-PC60 is a 1MX32 DRAM with 3.3V supply, operating at 166MHz clock frequency. Ideal for synchronous graphics RAM applications due to its 5.5ns access time and dual bank page burst access mode. Package style flatpack, width 14mm, length 20mm, temperature grade commercial.
MT40A1G8SA-062EIT:R by Micron Technology

MT40A1G8SA-062EIT:R

Micron Technology

Micron Technology's MT40A1G8SA-062EIT:R is a DDR4 DRAM with 1GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
AS4C128M16D3LC-12BINTR by Alliance Memory

AS4C128M16D3LC-12BINTR

Alliance Memory

Alliance Memory's AS4C128M16D3LC-12BINTR is a 128MX16 DDR3L DRAM with 800 MHz clock frequency. It operates at 1.35V, has 96 terminals in a grid array package style, and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing.
MT47H128M16RT-25E:C by Micron Technology

MT47H128M16RT-25E:C

Micron Technology

MT47H128M16RT-25E:C by Micron Technology is a 128MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT46H128M32L2MC-6WT:B by Micron Technology

MT46H128M32L2MC-6WT:B

Micron Technology

Micron Technology's MT46H128M32L2MC-6WT:B is a 128MX32 DDR1 DRAM with 240 terminals and operates at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring fast access times and high memory density.
MT47H128M16RT-25EXIT:C by Micron Technology

MT47H128M16RT-25EXIT:C

Micron Technology

Micron Technology's MT47H128M16RT-25EXIT:C is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access times in industrial environments.
S27KL0642DPBHI023 by Cypress Semiconductor

S27KL0642DPBHI023

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; Maximum Access Time: 35 ns;
K4S281632I-UC60 by Samsung

K4S281632I-UC60

Samsung

Samsung's K4S281632I-UC60 is a 3.3V DRAM with 8MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high-speed memory access in commercial-grade devices.
MT41K256M16HA-125IT:E by Micron Technology

MT41K256M16HA-125IT:E

Micron Technology

Micron Technology's MT41K256M16HA-125IT:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features a low supply voltage of 1.35V and offers 4294967296 bits memory density. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT16KTF2G64HZ-1G6A1 by Micron Technology

MT16KTF2G64HZ-1G6A1

Micron Technology

Micron Technology's MT16KTF2G64HZ-1G6A1 is a 2GX64 DDR DRAM MODULE with 64-bit memory width and 137.4 Gb density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.
MT48LC16M16A2P-75:D by Micron Technology

MT48LC16M16A2P-75:D

Micron Technology

MT48LC16M16A2P-75:D by Micron Technology is a 16MX16 SDRAM with 3.3V supply, 133 MHz clock frequency, and 70°C operating temp. Ideal for commercial applications requiring high-speed memory access in a small outline package.
S70KL1282DPBHA023 by Infineon Technologies

S70KL1282DPBHA023

Infineon Technologies

Infineon's S70KL1282DPBHA023 is a 16MX8 DRAM with 200 MHz clock frequency, operating at 3.6V max voltage. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for automotive applications due to AEC-Q100 screening level and very thin profile grid array package style.
MT46V32M16P-5B:FTR by Micron Technology

MT46V32M16P-5B:FTR

Micron Technology

MT46V32M16P-5B:FTR by Micron Technology is a DDR1 DRAM with 32MX16 organization and 33554432 words. It operates synchronously, has self-refresh capability, and a max access time of 0.7 ns. It is commonly used in applications requiring high-speed memory such as computers and servers.