DRAM MODULE DRAM 394

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M393B2K70CM0-CF8	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5814 mA	2147483648 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	4 mm	533 MHz	30 mm	Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH			260	1.89 Amp	133.35 mm	.3 ns
M393B5773CH0-CF8	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2200 mA	268435456 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm	533 MHz	30 mm	Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH			260		133.35 mm	.3 ns
KMM374S203CT-GH0	Samsung	DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		2MX72	2M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	35.055 mm		2.54 mm		150994944 bit	3 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm	6 ns
M393B1K70EB0-K0	Samsung	DRAM MODULE
KMM332V124BT-L5	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	320 mA	1048576 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		DUAL	1	R-PDMA-N72		3.6 V	25.4 mm		2.54 mm	Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; WD-MAX; SEATED HGT-NOM				.0004 Amp	59.68 mm	50 ns
M393B5270EB0-K0	Samsung	DRAM MODULE
M393B5273CH0-CF8	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2470 mA	536870912 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm	533 MHz	30 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH			260	.786 Amp	133.35 mm	.3 ns
M393B1K73EB0-YH9	Samsung	DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm			1GX72	1G			DUAL	1	R-XDMA-N240		1.45 V	30.15 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX					133.35 mm
KMM366S203CT-GL0	Samsung	DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		2MX64	2M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	31.88 mm		2.54 mm		134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm	6 ns
KMM366S203CT-G80	Samsung	DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		2MX64	2M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	31.88 mm		2.54 mm		134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm	6 ns
KMM5361205C2W-60	Samsung	DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words	YES		5		36	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		1MX36	1M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	19.18 mm		5.08 mm		37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; WD-MAX					107.95 mm	60 ns
M393B1K73CH0-YF8	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2790 mA	1073741824 words	YES	COMMON	1.5	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH			260	.001 Amp	133.35 mm	.3 ns
M393B1K70CH0-YH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4580 mA	1073741824 words	YES	COMMON	1.5	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm	667 MHz	30 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH			260	1.04 Amp	133.35 mm	.255 ns
KMM5322204C2W-50	Samsung	DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words	YES		5		32	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	19.18 mm		8.89 mm		67108864 bit	4.5 V	SELF REFRESH; WD-MAX					107.95 mm	50 ns
KMM332F224BT-L5	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	322 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N72		3.6 V	25.4 mm		3.81 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4			.0008 Amp	59.68 mm	50 ns
M393B1K70CH0-CK0	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5080 mA	1073741824 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	4 mm	800 MHz	30 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH			260	1.092 Amp	133.35 mm	.225 ns
KMM5361205C2WG-60	Samsung	DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words	YES		5		36	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		1MX36	1M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	19.18 mm		5.08 mm		37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; WD-MAX					107.95 mm	60 ns
M393B2K70CM0-YF8	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5454 mA	2147483648 words	YES	COMMON	1.5	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm	533 MHz	30 mm	Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH			260	1.89 Amp	133.35 mm	.3 ns
M393B5273CH0-CK0	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3010 mA	536870912 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	4 mm	800 MHz	30 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH			260	.876 Amp	133.35 mm	.225 ns
KMM332V404AZ-L6	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	280 mA	4194304 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		DUAL	1	R-PDMA-N72		3.6 V	25.4 mm		2.54 mm	Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; WD-MAX; SEATED HGT-NOM				.0006 Amp	59.68 mm	60 ns
KMM332V104BT-L5	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	220 mA	1048576 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		DUAL	1	R-PDMA-N72		3.6 V	25.4 mm		2.54 mm	Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; WD-MAX; SEATED HGT-NOM				.0004 Amp	59.68 mm	50 ns
M393B5773CH0-YH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES	COMMON	1.5	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH			260		133.35 mm	.255 ns
KMM466S104BT-F8	Samsung	DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	BURST AND FAST PAGE	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	1048576 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL	1	R-PDMA-N144		3.6 V	25.4 mm	125 MHz	3.81 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM				.002 Amp	67.6 mm	6 ns
KMM466S104BT-F2	Samsung	DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	BURST AND FAST PAGE	NO	1	CMOS	NO LEAD	SYNCHRONOUS	640 mA	1048576 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL	1	R-PDMA-N144		3.6 V	25.4 mm	83 MHz	3.81 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM				.002 Amp	67.6 mm	8 ns
M393B1K70CH0-YF8	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4050 mA	1073741824 words	YES	COMMON	1.5	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH			260	1 Amp	133.35 mm	.3 ns
KMM466S104BT-F0	Samsung	DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	BURST AND FAST PAGE	NO	1	CMOS	NO LEAD	SYNCHRONOUS	720 mA	1048576 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL	1	R-PDMA-N144		3.6 V	25.4 mm	100 MHz	3.81 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM				.002 Amp	67.6 mm	7 ns
KMM5364005CKG-60	Samsung	DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		36	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		4MX36	4M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	25.53 mm		5.08 mm		150994944 bit	4.5 V	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH; WD-MAX					107.95 mm	60 ns
M393B1K70CH0-CH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4940 mA	1073741824 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	4 mm	667 MHz	30 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH			260	1.042 Amp	133.35 mm	.255 ns
KMM5364005CK-60	Samsung	DRAM MODULE
KMM332F803BS-L60	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		8MX32	8M	0 Cel		ZIG-ZAG	1	R-XZMA-N72		3.6 V	31.88 mm		2.54 mm		268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; WD-MAX					59.68 mm	60 ns
M393B2K70CM0-CH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6768 mA	2147483648 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	4 mm	667 MHz	30 mm	Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH			260	1.962 Amp	133.35 mm	.255 ns
KMM332V204BT-L5	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	222 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		DUAL	1	R-PDMA-N72		3.6 V	25.4 mm		3.81 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; WD-MAX; SEATED HGT-NOM				.0008 Amp	59.68 mm	50 ns
M393B5273CH0-CH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2915 mA	536870912 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	4 mm	667 MHz	30 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH			260	.826 Amp	133.35 mm	.255 ns
KMM332V404AZ-L5	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	300 mA	4194304 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		DUAL	1	R-PDMA-N72		3.6 V	25.4 mm		2.54 mm	Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; WD-MAX; SEATED HGT-NOM				.0006 Amp	59.68 mm	50 ns
M393B1K70EB0-YH9	Samsung	DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm			1GX72	1G			DUAL	1	R-XDMA-N240		1.45 V	30.15 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX					133.35 mm
KMM5322104CKU-50	Samsung	DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words	YES		5		32	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	24.63 mm		5.08 mm		67108864 bit	4.5 V	SELF REFRESH; WD-MAX					107.95 mm	50 ns
KMM5364005CKG-50	Samsung	DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		36	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		4MX36	4M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	25.53 mm		5.08 mm		150994944 bit	4.5 V	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH; WD-MAX					107.95 mm	50 ns
KMM366S203CT-GH0	Samsung	DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		2MX64	2M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	31.88 mm		2.54 mm		134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm	6 ns
KMM332V404BS-L5	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	240 mA	4194304 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		DUAL	1	R-PDMA-N72		3.6 V	25.4 mm		2.54 mm	Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; WD-MAX; SEATED HGT-NOM				.001 Amp	59.68 mm	50 ns
M393B5270CH0-CF8	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3690 mA	536870912 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm	533 MHz	30 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH			260	.786 Amp	133.35 mm	.3 ns
KMM5361205C2WG-50	Samsung	DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words	YES		5		36	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		1MX36	1M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	19.18 mm		5.08 mm		37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; WD-MAX					107.95 mm	50 ns
M393B2K70CM0-YH9	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6228 mA	2147483648 words	YES	COMMON	1.5	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH			260	1.962 Amp	133.35 mm	.255 ns
KMM332F203BS-L5	Samsung	DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	400 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N72		3.6 V	25.4 mm		2.54 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; WD-MAX; SEATED HGT-NOM	e4			.0012 Amp	59.68 mm	50 ns
EDJ1108EJBG-JS-F	Micron Technology	DRAM MODULE	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		7.5 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1				11 mm
MTA4ATF1G64AZ-3G2	Micron Technology	DRAM MODULE																																											NOT SPECIFIED	NOT SPECIFIED
EDJ1108EJBG-GN-F	Micron Technology	DRAM MODULE	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		7.5 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1				11 mm
MTA36ASF8G72PZ-2G9	Micron Technology	DRAM MODULE																																											NOT SPECIFIED	NOT SPECIFIED
MTA4ATF1G64AZ-2G6B1	Micron Technology	DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words					64	MICROELECTRONIC ASSEMBLY				95 Cel		1GX64	1G	0 Cel		DUAL	1	R-XDMA-N288							68719476736 bit

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.