Toshiba - TH81070AL-70

  1. Home
  2. Toshiba - TH81070AL-70
TH81070AL-70 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TH81070AL-70
Description DRAM MODULE; Qualification: Not Qualified; Memory Width: 8; Organization: 1MX8; Memory Density: 8388608 bit; Technology: CMOS;
Datasheet TH81070AL-70 Datasheet
NAME DESCRIPTION
No. of Functions: 1
No. of Ports: 1
No. of Words: 1048576 words
Qualification: Not Qualified
Memory Density: 8388608 bit
Organization: 1MX8
Technology: CMOS
Maximum Access Time: 70 ns
No. of Words Code: 1M
Memory IC Type: DRAM MODULE
Memory Width: 8
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MT40A512M8SA-075:F by Micron Technology

MT40A512M8SA-075:F

Micron Technology

Micron Technology's MT40A512M8SA-075:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in a compact form factor.
MT41K512M16HA-125:ATR by Micron Technology

MT41K512M16HA-125:ATR

Micron Technology

DDR3L DRAM; JESD-609 Code: e1; Terminal Finish: TIN SILVER COPPER;
IS46TR16640CL-107MBLA2 by Integrated Silicon Solution

IS46TR16640CL-107MBLA2

Integrated Silicon Solution

IS46TR16640CL-107MBLA2 by Integrated Silicon Solution is a 64MX16 DDR3 DRAM with 1.35V supply voltage, operating in synchronous mode with self-refresh capability. It features a memory density of 1073741824 bits and is suitable for industrial applications requiring multi-bank page burst access mode at temperatures ranging from -40 to 105°C.
TC51V16405CST-60 by Toshiba

TC51V16405CST-60

Toshiba

Toshiba's TC51V16405CST-60 is a 4MX4 EDO DRAM with 16777216-bit memory density. Operating at 3.3V, it offers a max access time of 60ns and supports 4096 refresh cycles. Ideal for commercial applications requiring fast memory access in small outline packages.
K4A8G085WB-BCPB by Samsung

K4A8G085WB-BCPB

Samsung

Samsung's K4A8G085WB-BCPB DDR4 DRAM features 1066 MHz clock frequency, 78 terminals, and 1.2V supply voltage. Ideal for high-performance computing applications requiring fast data processing and storage with a memory density of 8.59 Gb.
MT46V32M16P-5BIT by Micron Technology

MT46V32M16P-5BIT

Micron Technology

Micron Technology's MT46V32M16P-5BIT is a DDR1 DRAM with 32MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high-speed memory access in a compact package.
MT53E128M32D2DS-046AIT:A by Micron Technology

MT53E128M32D2DS-046AIT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-046AIT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in harsh environments.
S27KL0642GABHI020 by Cypress Semiconductor

S27KL0642GABHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00025 Amp; No. of Functions: 1;
S27KS0642GABHV023 by Infineon Technologies

S27KS0642GABHV023

Infineon Technologies

S27KS0642GABHV023 by Infineon Technologies is a 8MX8 DRAM with 67108864 bit memory density. It operates at 200 MHz clock frequency, featuring synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices due to its very thin profile package style.
MT46H32M16LFBF-5IT:C by Micron Technology

MT46H32M16LFBF-5IT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-5IT:C is a 32MX16 DDR1 DRAM with 536870912-bit memory density. It operates at 200 MHz with a supply voltage of 1.8V, suitable for industrial applications requiring fast data access and low power consumption. The package style is grid array, very thin profile, fine pitch, making it ideal for space-constrained designs.
MB814400A-70PZ by Fujitsu

MB814400A-70PZ

Fujitsu

The Fujitsu MB814400A-70PZ is a 1MX4 DRAM with 3-STATE output, operating at 5V. It features a memory density of 4194304 bit and offers fast access with a max access time of 70ns. Ideal for commercial applications requiring high-speed memory solutions.
MT47H128M16RT-25EAIT:C by Micron Technology

MT47H128M16RT-25EAIT:C

Micron Technology

Micron Technology's MT47H128M16RT-25EAIT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage and offers multi-bank page burst access mode. This industrial-grade memory IC has a thin profile grid array package suitable for various applications requiring high-speed synchronous operation.
MT48LC16M16A2B4-6AIT:G by Micron Technology

MT48LC16M16A2B4-6AIT:G

Micron Technology

MT48LC16M16A2B4-6AIT:G by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact grid array package with very thin profile and fine pitch design.
KM416C1000AJ-7 by Samsung

KM416C1000AJ-7

Samsung

Samsung's KM416C1000AJ-7 is a 1MX16 DRAM with 70ns access time, operating at 5V. It features a small outline package, 3-state output, and fast page access mode. Ideal for commercial applications requiring high memory density and fast data retrieval.
MT40A1G8SA-062EAIT:E by Micron Technology

MT40A1G8SA-062EAIT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EAIT:E is a DDR4 DRAM with 1.2V supply, operating at up to 1600MHz clock frequency. It features 1GX8 organization, 1073741824 words capacity, and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics or industrial systems.
IS42S16800F-7BLI-TR by Integrated Silicon Solution

IS42S16800F-7BLI-TR

Integrated Silicon Solution

IS42S16800F-7BLI-TR by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143 MHz clock frequency. Ideal for industrial applications requiring fast access time and low standby current consumption.
MT41K128M16JT-125AAT:K by Micron Technology

MT41K128M16JT-125AAT:K

Micron Technology

Micron Technology's MT41K128M16JT-125AAT:K is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package, operates at 1.35V, and has an industrial temperature grade. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
AS4C256M16D4-83BCN by Alliance Memory

AS4C256M16D4-83BCN

Alliance Memory

Alliance Memory's AS4C256M16D4-83BCN is a 256MX16 DDR4 DRAM with 1200 MHz clock frequency, 95°C operating temp, and 1.2V supply voltage. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT48LC8M16A2TG-75:G by Micron Technology

MT48LC8M16A2TG-75:G

Micron Technology

Micron Technology's MT48LC8M16A2TG-75:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 133MHz clock frequency. Ideal for commercial applications, it offers 4096 refresh cycles and supports sequential burst lengths of 1,2,4,8.
MT40A512M16LY-062E:E by Micron Technology

MT40A512M16LY-062E:E

Micron Technology

Micron Technology's MT40A512M16LY-062E:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in various electronic devices.