EDO DRAM MODULE DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Maximum Access Time
THM3210B5BS-70	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		300 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE		R-PSMA-N72		17.78 mm	Not Qualified	33554432 bit			.002 Amp	70 ns
THL64V8035BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel	DUAL	1	R-XDMA-N144	3.47 V		Not Qualified	536870912 bit	3.13 V			50 ns
THL64V8015ATG-5S	Toshiba	EDO DRAM MODULE	COMMERCIAL	144		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	8MX64	8M	0 Cel	ZIG-ZAG	1	R-XZMA-N144	3.47 V		Not Qualified	536870912 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		50 ns
THM328025BS-60	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		896 mA	8388608 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	SINGLE		R-PSMA-N72		25.4 mm	Not Qualified	268435456 bit			.016 Amp	60 ns
TC51V17445BST	Toshiba	EDO DRAM MODULE							FAST PAGE WITH EDO		1	CMOS		ASYNCHRONOUS		4194304 words					4								4MX4	4M			1				Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
THL64V8015BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	8388608 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-N144	3.47 V		Not Qualified	536870912 bit	3.13 V		.004 Amp	50 ns
THM72V1635ATG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2350 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V	30.48 mm	Not Qualified	1207959552 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.019 Amp	50 ns
THM65V4075ATG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	520 mA	4194304 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V	25.4 mm	Not Qualified	268435456 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.002 Amp	50 ns
THL64V8035BTG-5S	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel	DUAL	1	R-XDMA-N144	3.47 V		Not Qualified	536870912 bit	3.13 V			50 ns
THM65V4095ATG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	520 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	268435456 bit	3.13 V	CAS BEFORE RAS/HIDDEN REFRESH	.002 Amp	50 ns
THL64V8035BTG-4S	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel	DUAL	1	R-XDMA-N144	3.47 V		Not Qualified	536870912 bit	3.13 V			40 ns
THL64V4095BTG-5S	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		4MX64	4M	0 Cel	DUAL	1	R-XDMA-N144	3.47 V		Not Qualified	268435456 bit	3.13 V			40 ns
THM73V8035ATG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1170 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V	25.4 mm	Not Qualified	603979776 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.0045 Amp	50 ns
THM324005BSG-60	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		880 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	SINGLE		R-PSMA-N72		22.86 mm	Not Qualified	134217728 bit			.008 Amp	60 ns
THM72V1615BTG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		16777216 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		16MX72	16M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	1207959552 bit	3.13 V			40 ns
THM65V8035BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	536870912 bit	3.13 V			50 ns
THL64V4075BTG-4S	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		4MX64	4M	0 Cel	DUAL	1	R-XDMA-N144	3.47 V		Not Qualified	268435456 bit	3.13 V			40 ns
THM3210B5BSG-60	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		360 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE		R-PSMA-N72		17.78 mm	Not Qualified	33554432 bit			.002 Amp	60 ns
THM3251F5BS-60	Toshiba	EDO DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	512KX32	512K	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
THM73V1615ATG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1		NO LEAD	ASYNCHRONOUS		16777216 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		16MX72	16M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	1207959552 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		40 ns
THM3210B5BSG-70	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		300 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE		R-PSMA-N72		17.78 mm	Not Qualified	33554432 bit			.002 Amp	70 ns
THL64V8015BTG-4S	Toshiba	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	960 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-N144	3.47 V		Not Qualified	536870912 bit	3.13 V		.0016 Amp	40 ns
THM73V8015BTG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	603979776 bit	3.13 V			40 ns
THM65V8035BTG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	536870912 bit	3.13 V			40 ns
THL64V4075ATG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1		NO LEAD	ASYNCHRONOUS		4194304 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		4MX64	4M	0 Cel	DUAL	1	R-XDMA-N144	3.47 V		Not Qualified	268435456 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		50 ns
THM65V8015ATG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1		NO LEAD	ASYNCHRONOUS		8388608 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	536870912 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		40 ns
THM73V8015ATG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1		NO LEAD	ASYNCHRONOUS		8388608 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	603979776 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		40 ns
TC51V18165BJ-60	Toshiba	EDO DRAM MODULE							FAST PAGE WITH EDO		1	CMOS		ASYNCHRONOUS		1048576 words					16								1MX16	1M			1				Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
THM3680G5BS-70	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		873 mA	8388608 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M	0 Cel	SINGLE		R-PSMA-N72			Not Qualified	301989888 bit			.018 Amp	70 ns
THM3680G5BS-60	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1008 mA	8388608 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M	0 Cel	SINGLE		R-PSMA-N72			Not Qualified	301989888 bit			.018 Amp	60 ns
THM73V8035BTG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	603979776 bit	3.13 V			40 ns
THM324005BSG-70	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		760 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	SINGLE		R-PSMA-N72		22.86 mm	Not Qualified	134217728 bit			.008 Amp	70 ns
THL64V8035BTG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel	DUAL	1	R-XDMA-N144	3.47 V		Not Qualified	536870912 bit	3.13 V			40 ns
THM3640F5BSG-60	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		990 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	0 Cel	SINGLE		R-PSMA-N72			Not Qualified	150994944 bit			.009 Amp	60 ns
THM65V1615ATG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2560 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	1073741824 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp	40 ns
THM72V1615ATG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2890 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V	30.48 mm	Not Qualified	1207959552 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.019 Amp	40 ns
TC51V17405BSJ	Toshiba	EDO DRAM MODULE							FAST PAGE WITH EDO		1	CMOS		ASYNCHRONOUS		4194304 words					4								4MX4	4M			1				Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
THM65V1615ATG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2080 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	1073741824 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp	50 ns
THM3251F5BSG-70	Toshiba	EDO DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	512KX32	512K	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
THL64V4095BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		4MX64	4M	0 Cel	DUAL	1	R-XDMA-N144	3.47 V		Not Qualified	268435456 bit	3.13 V			40 ns
THM72V8035BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	603979776 bit	3.13 V			50 ns
THL64V4075BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		4MX64	4M	0 Cel	DUAL	1	R-XDMA-N144	3.47 V		Not Qualified	268435456 bit	3.13 V			50 ns
THM72V8035BTG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	603979776 bit	3.13 V			40 ns
THL64V8015ATG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	144		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	8MX64	8M	0 Cel	ZIG-ZAG	1	R-XZMA-N144	3.47 V		Not Qualified	536870912 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		50 ns
THM73V8035ATG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1440 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V	25.4 mm	Not Qualified	603979776 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.0045 Amp	40 ns
THM65V1635BTG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		16777216 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		16MX64	16M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	1073741824 bit	3.13 V			40 ns
THM3251F5BS-70	Toshiba	EDO DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	512KX32	512K	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
THM65V4075BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		4MX64	4M	0 Cel	DUAL	1	R-XDMA-N168	3.47 V		Not Qualified	268435456 bit	3.13 V			50 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.