EDO DRAM MODULE DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Maximum Access Time
KMM374F800CK-7	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M		0 Cel	DUAL	1	R-XDMA-N168		3.6 V		Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
KMM372F3280BK4-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1720 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel	DUAL	1	R-XDMA-N168		3.6 V	50.8 mm	Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
M53231600BJ0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	16777216 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M		0 Cel	SINGLE	1	R-XSMA-N72		5.5 V		Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp	60 ns
KMM364E213CS-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	2097152 words	NO	COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M		0 Cel	DUAL	1	R-XDMA-N168		5.5 V	25.4 mm	Not Qualified	134217728 bit	4.5 V	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH	.03 Amp	60 ns
KMM372F3200CK4-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		33554432 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		32MX72	32M		0 Cel	DUAL	1	R-XDMA-N168		3.6 V		Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
KMM364E404CS-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		64	MICROELECTRONIC ASSEMBLY					70 Cel		4MX64	4M		0 Cel	DUAL	1	R-XDMA-N168		5.5 V		Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		50 ns
KMM53232004CK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	896 mA	33554432 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	32MX32	32M		0 Cel	SINGLE	1	R-XSMA-N72		5.5 V		Not Qualified	1073741824 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.016 Amp	60 ns
KMM374F124BJ-7	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		670 mA	1048576 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	1MX72	1M	3 V	0 Cel	DUAL		R-PDMA-N168				Not Qualified	75497472 bit			.005 Amp	70 ns
M372F0803ET0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	990 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel	DUAL	1	R-XDMA-N168	1	3.6 V		Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
KMM364E410CK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1760 mA	4194304 words	NO	COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		0 Cel	DUAL	1	R-XDMA-N168		5.5 V	25.4 mm	Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
KMM5328004BK-7	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	736 mA	8388608 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M		0 Cel	SINGLE	1	R-XSMA-N72		5.5 V		Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.016 Amp	70 ns
M366F0484CT1-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	440 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		0 Cel	DUAL	1	R-XDMA-N168		3.6 V		Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.002 Amp	60 ns
KMM332F803AS-L5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		600 mA	8388608 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M		0 Cel	DUAL		R-PDMA-N72				Not Qualified	268435456 bit			.0012 Amp	50 ns
KMM5364005BK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	900 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M		0 Cel	SINGLE	1	R-XSMA-N72		5.5 V		Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.009 Amp	50 ns
KMM372E883CK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	900 mA	8388608 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel	DUAL	1	R-XDMA-N168		5.5 V		Not Qualified	603979776 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
KMM466F803BS2-L6	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		0 Cel	DUAL	1	R-XDMA-N144		3.6 V		Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN /SELF REFRESH	.0024 Amp	60 ns
KMM372F1680AS-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2700 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		0 Cel	DUAL	1	R-XDMA-N168		3.6 V	31.75 mm	Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
KMM364E803AS-7	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1040 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M		0 Cel	DUAL	1	R-XDMA-N168		5.5 V		Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	70 ns
M372F0883BT0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel	DUAL	1	R-XDMA-N168		3.6 V		Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
KMM466F124AT1-L6	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		600 mA	1048576 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M		0 Cel	DUAL		R-PDMA-N144			25.4 mm	Not Qualified	67108864 bit			.0008 Amp	60 ns
KMM364E484CS-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	400 mA	4194304 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		0 Cel	DUAL	1	R-XDMA-N168		5.5 V		Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
KMM5368005ASWG-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		366 mA	8388608 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M		0 Cel	SINGLE		R-PSMA-N72				Not Qualified	301989888 bit			.006 Amp	60 ns
KMM5324104BKG-5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M		0 Cel	SINGLE	1	R-XSMA-N72		5.5 V	25.4 mm	Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp	50 ns
M53230800DB0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	656 mA	8388608 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M		0 Cel	SINGLE	1	R-XSMA-N72		5.5 V		Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.016 Amp	60 ns
KMM466F203CS2-L5	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M		0 Cel	DUAL	1	R-XDMA-N144		3.6 V		Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	.0016 Amp	50 ns
M466F0404BF1-L600	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		440 mA	4194304 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M		0 Cel	DUAL		R-PDMA-N144				Not Qualified	268435456 bit			.0012 Amp	60 ns
KMM466F124AT-L7	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	560 mA	1048576 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M		0 Cel	DUAL	1	R-XDMA-N144		3.6 V	25.4 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.0008 Amp	70 ns
KMM53232004AKG-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1136 mA	33554432 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	32MX32	32M		0 Cel	SINGLE		R-PSMA-N72				Not Qualified	1073741824 bit			.016 Amp	60 ns
KMM5324004CSWG-5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	240 mA	4194304 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M		0 Cel	SINGLE	1	R-XSMA-N72		5.5 V		Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.002 Amp	50 ns
M53640800CB0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel		8MX36	8M		0 Cel	SINGLE	1	R-XSMA-N72		5.5 V		Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		50 ns
KMM5362205BW/BWG-6	Samsung	EDO DRAM MODULE		72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD			2097152 words			5		36	MICROELECTRONIC ASSEMBLY							2MX36	2M			SINGLE	1	R-XSMA-N72				Not Qualified	75497472 bit				60 ns
KMM372F404CS-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		4MX72	4M		0 Cel	DUAL	1	R-XDMA-N168		3.6 V		Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
M366F0484CT1-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	480 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		0 Cel	DUAL	1	R-XDMA-N168		3.6 V		Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.002 Amp	50 ns
M366F1600BJ2-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1760 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		0 Cel	DUAL	1	R-XDMA-N168		3.6 V		Not Qualified	1073741824 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp	60 ns
M364E1600CJ0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1760 mA	16777216 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		0 Cel	DUAL	1	R-XDMA-N168		5.5 V		Not Qualified	1073741824 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
M372F0883CT0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	900 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel	DUAL	1	R-XDMA-N168		3.6 V		Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
M53633200BB0-C600	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1224 mA	33554432 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	32MX36	32M		0 Cel	SINGLE		R-PSMA-N72				Not Qualified	1207959552 bit			.024 Amp	60 ns
M372F0400CB0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1620 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel	DUAL	1	R-XDMA-N168		3.6 V		Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
KMM374F3280CK1-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1818 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel	DUAL	2	R-XDMA-N168		3.6 V	41.275 mm	Not Qualified	2415919104 bit	3 V		.018 Amp	60 ns
KMM5321204AW/AWG-7	Samsung	EDO DRAM MODULE		72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD			1048576 words			5		32	MICROELECTRONIC ASSEMBLY							1MX32	1M			SINGLE	1	R-XSMA-N72				Not Qualified	33554432 bit				70 ns
KMM5364105BK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	900 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M		0 Cel	SINGLE	1	R-XSMA-N72		5.5 V		Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.009 Amp	60 ns
KMM372F1680CK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		16777216 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		16MX72	16M		0 Cel	DUAL	1	R-XDMA-N168		3.6 V		Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
KMM332F224BT-L6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	302 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M		0 Cel	DUAL	1	R-XDMA-N72		3.6 V	25.4 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.0008 Amp	60 ns
M372F0883DT0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	990 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel	DUAL	1	R-XDMA-N168		3.6 V		Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
M372F3280CJ3-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1998 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel	DUAL	1	R-XDMA-N168		3.6 V	41.91 mm	Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
M466F0803CT2-L50	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		0 Cel	ZIG-ZAG	1	R-XZMA-N144		3.6 V		Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.0016 Amp	50 ns
KMM5364005BK/BKG-5	Samsung	EDO DRAM MODULE		72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD			4194304 words			5		36	MICROELECTRONIC ASSEMBLY							4MX36	4M			SINGLE	1	R-XSMA-N72				Not Qualified	150994944 bit				50 ns
M53230800CW0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel		8MX32	8M		0 Cel	SINGLE	1	R-XSMA-N72		5.5 V		Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		50 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.