EDO DRAM MODULE DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Length	Maximum Access Time
KMM366F213BK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	2097152 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M	DUAL	1	R-XDMA-N168		3.6 V	25.4 mm		Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.000004 Amp		60 ns
KMM372F3280BK3-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2260 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	DUAL	1	R-XDMA-N168		3.6 V	41.91 mm		Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		50 ns
KMM5368005ASW-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		366 mA	8388608 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M	SINGLE		R-PSMA-N72					Not Qualified	301989888 bit			.006 Amp		60 ns
M366F0884DT1-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	484 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.004 Amp		50 ns
KMM374F400CS1-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1620 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	DUAL	2	R-XDMA-N168		3.6 V	25.4 mm		Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.009 Amp		50 ns
KMM332F203CS-L6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	320 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	DUAL	1	R-XDMA-N72		3.6 V			Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	.0008 Amp		60 ns
KMM332F224AT-L7	Samsung	EDO DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	282 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	DUAL	1	R-XDMA-N72		3.6 V	25.4 mm		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.0008 Amp		70 ns
M53640805CT0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	336 mA	8388608 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M	SINGLE	2	R-XSMA-N72		5.5 V			Not Qualified	301989888 bit	4.5 V		.006 Amp		50 ns
KMM366F803CK2-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	DUAL	2	R-XDMA-N168		3.6 V	25.4 mm		Not Qualified	536870912 bit	3 V		.004 Amp		60 ns
KMM364E803CK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	960 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-N168		5.5 V			Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		50 ns
M53230810CW0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel		8MX32	8M	SINGLE	1	R-XSMA-N72		5.5 V			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			60 ns
KMM5361205BWG-7	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	345 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	SINGLE	1	R-XSMA-N72		5.5 V			Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.003 Amp		70 ns
KMM5322104CKUG-5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	440 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	DUAL	1	R-XDMA-N72		5.5 V	25.4 mm		Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.004 Amp		50 ns
KMM372F400CS-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1620 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	301989888 bit	3 V	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH	.03 Amp		50 ns
KMM374F810BK-7	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1638 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL	1	R-XDMA-N168		3.6 V	38.1 mm		Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.018 Amp		70 ns
KMM366F1600AK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2240 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	1073741824 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp		60 ns
KMM5368105BK-7	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	828 mA	8388608 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M	SINGLE	1	R-XSMA-N72		5.5 V			Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.018 Amp		70 ns
KMM364E883BS-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-N168		5.5 V			Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		60 ns
KMM374F3280BK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2196 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	DUAL	1	R-XDMA-N168		3.6 V	41.275 mm		Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.018 Amp		50 ns
KMM372E213CS-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		72	MICROELECTRONIC ASSEMBLY					70 Cel		2MX72	2M	DUAL	1	R-XDMA-N168		5.5 V			Not Qualified	150994944 bit	4.5 V	CAS BEFORE RAS REFRESH; RAS ONLY/HIDDEN REFRESH			60 ns
KMM5324004CSW-5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	240 mA	4194304 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	SINGLE	1	R-XSMA-N72		5.5 V			Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.002 Amp		50 ns
M364E0883CT0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-N168		5.5 V			Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		50 ns
M53631601BJ0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1320 mA	16777216 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	16MX36	16M	SINGLE	1	R-XSMA-N72		5.5 V			Not Qualified	603979776 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.012 Amp		50 ns
KMM466F803AS2-L6	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1120 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	DUAL		R-PDMA-N144					Not Qualified	536870912 bit			.0024 Amp		60 ns
M374F1600DJ1-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1800 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.009 Amp		60 ns
KMM374F883CS3-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	990 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL	2	R-XDMA-N168		3.6 V	31.75 mm		Not Qualified	603979776 bit	3 V		.0045 Amp		50 ns
M374F1680BJ1-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1620 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.009 Amp		60 ns
KMM5361205AW-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	395 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	SINGLE	1	R-XSMA-N72		5.5 V			Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.003 Amp		60 ns
KMM366F484BS1-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	440 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.002 Amp		60 ns
KMM366F803BK2-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		880 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	DUAL		R-PDMA-N168			25.4 mm		Not Qualified	536870912 bit			.004 Amp		60 ns
M364E0883CJ0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-N168		5.5 V			Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		60 ns
KMM372E3280BK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1900 mA	33554432 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	DUAL	1	R-XDMA-N168		5.5 V	50.8 mm		Not Qualified	2415919104 bit	4.5 V	CAS BEFORE RAS REFRESH; RAS ONLY/HIDDEN REFRESH	.03 Amp		50 ns
KMM372F804CS-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			60 ns
M372F0410DZ0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		4MX72	4M	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	301989888 bit	3 V				60 ns
KMM53216004CK-60	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		16777216 words			5		32	MICROELECTRONIC ASSEMBLY				1.27 mm	70 Cel		16MX32	16M	SINGLE	1	R-XSMA-N72		5.5 V	31.88 mm	8.89 mm		536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; WD-MAX		107.95 mm	60 ns
KMM5324104CKG-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	DUAL	1	R-XDMA-N72		5.5 V	25.4 mm		Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp		60 ns
KMM374F410BK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1800 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	DUAL	1	R-XDMA-N168		3.6 V	25.4 mm		Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.009 Amp		60 ns
M53230810DB0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	896 mA	8388608 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	SINGLE	1	R-XSMA-N72		5.5 V			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.016 Amp		50 ns
KMM372F883AS-7	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1170 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		70 ns
KMM364E804BS-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	540 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-N168		5.5 V			Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		60 ns
M53640810DW0-50	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1008 mA	8388608 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M	SINGLE		R-PSMA-N72					Not Qualified	301989888 bit			.018 Amp		50 ns
M53633201CE0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1344 mA	33554432 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	32MX36	32M	SINGLE	1	R-XSMA-N72		5.5 V			Not Qualified	1207959552 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.024 Amp		50 ns
M372F0400CW0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		4MX72	4M	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	301989888 bit	3 V				50 ns
M372F1680EJ0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1800 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL	1	R-XDMA-N168	1	3.6 V	31.75 mm		Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		60 ns
M53633201BJ0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1344 mA	33554432 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	32MX36	32M	SINGLE	1	R-XSMA-N72		5.5 V			Not Qualified	1207959552 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.024 Amp		50 ns
KMM466F804AS1-L5	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		604 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	DUAL		R-PDMA-N144					Not Qualified	536870912 bit			.0024 Amp		50 ns
KMM372F883CK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			50 ns
KMM372F803BK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	990 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.