EDO DRAM MODULE DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Maximum Access Time
KMM374F883BK1-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL	2	R-XDMA-N168	3.6 V	25.4 mm	Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.0045 Amp	60 ns
KMM372E400CK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		72	MICROELECTRONIC ASSEMBLY					70 Cel		4MX72	4M	DUAL	1	R-XDMA-N168	5.5 V		Not Qualified	301989888 bit	4.5 V	CAS BEFORE RAS REFRESH; RAS ONLY/HIDDEN REFRESH		50 ns
KMM53232004CK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	976 mA	33554432 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	32MX32	32M	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	1073741824 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.016 Amp	50 ns
KMM374F803BS-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	990 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL	1	R-XDMA-N168	3.6 V	31.75 mm	Not Qualified	603979776 bit	3 V		.0045 Amp	60 ns
KMM53616004AK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	16777216 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	16MX36	16M	SINGLE		R-PSMA-N72			Not Qualified	603979776 bit			.012 Amp	60 ns
KMM364E803CS-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-N168	5.5 V		Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
KMM5368005BSW-5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	336 mA	8388608 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.006 Amp	50 ns
KMM332F404BZ-L5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	240 mA	4194304 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	DUAL	1	R-XDMA-N72	3.6 V		Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.001 Amp	50 ns
KMM332F404BZ-L6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	220 mA	4194304 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	DUAL	1	R-XDMA-N72	3.6 V		Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.001 Amp	60 ns
KMM364E400CS-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1280 mA	4194304 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	DUAL	1	R-XDMA-N168	5.5 V	25.4 mm	Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
KMM364E410CK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1600 mA	4194304 words	NO	COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	DUAL	1	R-XDMA-N168	5.5 V	25.4 mm	Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
KMM374F224CJ1-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	660 mA	2097152 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX72	2M	DUAL	1	R-XDMA-N168	3.6 V		Not Qualified	150994944 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.01 Amp	60 ns
KMM332F804AS-L5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		302 mA	8388608 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	DUAL		R-PDMA-N72			Not Qualified	268435456 bit			.0012 Amp	50 ns
M372E3200BJ0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2260 mA	33554432 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	DUAL	1	R-XDMA-N168	5.5 V	50.8 mm	Not Qualified	2415919104 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
M372F0805DT0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	666 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL	1	R-XDMA-N168	3.6 V	25.4 mm	Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
KMM5364005BSWG-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	300 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	150994944 bit	4.5 V	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH	.003 Amp	60 ns
KMM372F803CK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	DUAL	1	R-XDMA-N168	3.6 V		Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
M372F0883DJ0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	900 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL	1	R-XDMA-N168	3.6 V		Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
M366F0404BF1-C600	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		440 mA	4194304 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	DUAL		R-PDMA-N168		25.4 mm	Not Qualified	268435456 bit			.002 Amp	60 ns
M53640400DB0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel		4MX36	4M	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		50 ns
M372E1600BT0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1980 mA	16777216 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL	1	R-XDMA-N168	5.5 V	31.75 mm	Not Qualified	1207959552 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
KMM372F810CK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1818 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL	1	R-XDMA-N168	3.6 V	38.1 mm	Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
KMM374F410BK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1980 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	DUAL		R-PDMA-N168		25.4 mm	Not Qualified	301989888 bit			.009 Amp	50 ns
KMM374F410CK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1980 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	DUAL	1	R-XDMA-N168	3.6 V	25.4 mm	Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.009 Amp	50 ns
KMM366F410CK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1600 mA	4194304 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	DUAL	1	R-XDMA-N168	3.6 V		Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp	60 ns
M372F0803DT0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	900 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL	1	R-XDMA-N168	3.6 V		Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
M372E0883BJ0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	DUAL	1	R-XDMA-N168	5.5 V		Not Qualified	603979776 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		50 ns
M53640405CT0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	300 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.006 Amp	60 ns
KMM372F1680AK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2700 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL	1	R-XDMA-N168	3.6 V	31.75 mm	Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
M364E0804BT0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	540 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-N168	5.5 V		Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
KMM5361205BW-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	375 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.003 Amp	60 ns
KMM374F203CK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	2097152 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX72	2M	DUAL	1	R-XDMA-N168	3.6 V		Not Qualified	150994944 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.0045 Amp	50 ns
KMM5322104BKU-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	400 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.004 Amp	60 ns
M53230804CT0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	224 mA	8388608 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.004 Amp	60 ns
M372F0805DT0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	606 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL	1	R-XDMA-N168	3.6 V	25.4 mm	Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
KMM5324104BKG-7	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm	Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp	70 ns
KMM374F1680BK1-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1620 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL	1	R-XDMA-N168	3.6 V		Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.009 Amp	60 ns
KMM372F3280AK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2800 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	DUAL	1	R-XDMA-N168	3.6 V	59.69 mm	Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
M53230804BT0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	244 mA	8388608 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.004 Amp	50 ns
KMM5324004BK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp	50 ns
M364E0803CT0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	960 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-N168	5.5 V		Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
M53640405CY0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	300 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.006 Amp	60 ns
KMM374F410CS1-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1980 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	DUAL	2	R-XDMA-N168	3.6 V	25.4 mm	Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.009 Amp	50 ns
KMM374F804CS1-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	606 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL	1	R-XDMA-N168	3.6 V	25.4 mm	Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.006 Amp	60 ns
M53640405BY0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	300 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.003 Amp	60 ns
KMM5364105BKG-5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	990 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.009 Amp	50 ns
KMM372F410BS-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1980 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	DUAL	1	R-XDMA-N168	3.6 V	25.4 mm	Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
M366F0803DJ2-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-N168	3.6 V	25.4 mm	Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.004 Amp	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.