FAST PAGE DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
TC5116180AFT-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		18	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			1MX18	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm	10.16 mm	Not Qualified	18874368 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		20.95 mm	80 ns
TC514256P-85	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		75 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	1048576 bit			e0	.001 Amp		85 ns
TC514273BZ-70	Toshiba	FAST PAGE DRAM		40	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			262144 words			5		16	IN-LINE			1.27 mm				256KX16	256K			ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm		Not Qualified	4194304 bit	4.5 V				51.2 mm	70 ns
TC5116400J-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel			4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.75 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		18.42 mm	60 ns
TC511664BZ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		16	IN-LINE			1.27 mm	70 Cel			64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		51.2 mm	100 ns
TC514256APL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			2.54 mm	70 Cel			256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.4 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		24.6 mm	80 ns
TC511665Z-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		16	IN-LINE			1.27 mm	70 Cel			64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		51.2 mm	80 ns
TC514260DJ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		85 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4194304 bit			e0	.001 Amp		70 ns
TC5117400BTR-50	Toshiba	FAST PAGE DRAM							FAST PAGE		1	CMOS		ASYNCHRONOUS		4194304 words					4								4MX4	4M				1					Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				50 ns
TC51V4260DFTS-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEELF REFRESH	e0		18.41 mm	60 ns
TC514400ASJ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		17.15 mm	80 ns
TC514400ASJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		17.15 mm	60 ns
TC5116400CST-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			17.14 mm	60 ns
TC514256AJ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel			256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm	7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		17.15 mm	80 ns
TC514280BZ-70	Toshiba	FAST PAGE DRAM		40	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			262144 words			5		18	IN-LINE			1.27 mm				256KX18	256K		TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm		Not Qualified	4718592 bit	4.5 V		e0		51.2 mm	70 ns
TC514400Z-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		25.8 mm	80 ns
TC514256AZ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			1.27 mm	70 Cel			256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		25.8 mm	100 ns
TC514256AZL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			1.27 mm	70 Cel			256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		25.8 mm	100 ns
TC514100Z-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		25.8 mm	100 ns
TC511000Z-85	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0	.001 Amp		85 ns
TC51V17800BNJS60	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		125 mA	2097152 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28				Not Qualified	16777216 bit			e0	.0002 Amp		60 ns
TC511000BJL-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	70 Cel			1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm	7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		17.15 mm	60 ns
TC511000PL-12	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		50 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0	.0003 Amp		120 ns
TC514256BPL-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			2.54 mm	70 Cel			256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.4 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		24.6 mm	60 ns
TC514100AP-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		22 mm	80 ns
TC514800AJ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel			512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		18.42 mm	80 ns
TC511000AJ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	70 Cel			1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm	7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		17.15 mm	70 ns
TC514280BJLL-80	Toshiba	FAST PAGE DRAM		40	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			262144 words			5		18	SMALL OUTLINE			1.27 mm				256KX18	256K		TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.7 mm	10.16 mm	Not Qualified	4718592 bit	4.5 V		e0		26.04 mm	80 ns
TC514400APL-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			2.54 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.4 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		24.6 mm	60 ns
TC514100APL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		22 mm	80 ns
TC514900AZLL-70	Toshiba	FAST PAGE DRAM		28	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			524288 words	YES		5		9	IN-LINE			1.27 mm				512KX9	512K		TIN LEAD	ZIG-ZAG	1	R-PZIP-T28	5.5 V	10.16 mm		Not Qualified	4718592 bit	4.5 V	SELF REFRESH	e0		36.2 mm	70 ns
TC51V17800BNTS-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		105 mA	2097152 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28				Not Qualified	16777216 bit			e0	.0002 Amp		70 ns
TC514100APL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		22 mm	100 ns
TC514800AFTL-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0		18.41 mm	70 ns
TC5118180AJ-60	Toshiba	FAST PAGE DRAM		42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	MOS	J BEND	ASYNCHRONOUS		1048576 words			5		18	SMALL OUTLINE			1.27 mm			3-STATE	1MX18	1M			DUAL	1	R-PDSO-J42		3.7 mm	10.16 mm	Not Qualified	18874368 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			27.31 mm	60 ns
TC51V4400ATRL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		55 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	4194304 bit			e0	.00015 Amp		100 ns
TC514400ASJ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		17.15 mm	100 ns
TC5116100BZ-50	Toshiba	FAST PAGE DRAM		24	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			16777216 words			5		1	IN-LINE			1.27 mm				16MX1	16M			ZIG-ZAG	1	R-PZIP-T24	5.5 V	12.07 mm		Not Qualified	16777216 bit	4.5 V				30.88 mm	50 ns
TC514400ZL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		25.8 mm	80 ns
TC514800AJL-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel			512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0		18.42 mm	70 ns
TC514800AZ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		524288 words			5		8	IN-LINE			1.27 mm	70 Cel			512KX8	512K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T28	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		36.2 mm	80 ns
TC511665BZ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		16	IN-LINE			1.27 mm	70 Cel			64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		51.2 mm	100 ns
TC5116100Z70	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		80 mA	16777216 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24				Not Qualified	16777216 bit			e0	.001 Amp		70 ns
TC514100Z-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		25.8 mm	80 ns
TC51V17405BST-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	7.7 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			17.14 mm	60 ns
TC51V18160CJS-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words	YES		3.3		16	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-J42	3.6 V	3.7 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			27.31 mm	60 ns
TC514410J-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		17.15 mm	100 ns
TC511000BPL-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	70 Cel			1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		22 mm	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.