FAST PAGE DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TC51V17800CST-50	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words			3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-G28	3.6 V	1.2 mm	7.7 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					18.41 mm	50 ns
TC511000C-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	1048576 bit			e0					100 ns
TC514410Z-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				25.8 mm	100 ns
TC511000PL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0			.0003 Amp		100 ns
TC514400AZL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				25.8 mm	80 ns
TC5116160AFT-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				20.95 mm	70 ns
TC5116100BSJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		80 mA	16777216 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	16777216 bit			e0			.001 Amp		60 ns
TC5116400BSJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		80 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	16777216 bit			e0			.001 Amp		60 ns
TC514256BFT-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	TSOP1	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	6 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				14.4 mm	60 ns
TC5116100CSJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words			5		1	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.7 mm	7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.15 mm	60 ns
TC514256BZ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				25.8 mm	60 ns
TC5117800CFT-50	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					18.41 mm	50 ns
TC514900AZL-80	Toshiba	FAST PAGE DRAM		28	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			524288 words			5		9	IN-LINE			1.27 mm			512KX9	512K		TIN LEAD	ZIG-ZAG	1	R-PZIP-T28	5.5 V	10.16 mm		Not Qualified	4718592 bit	4.5 V		e0				36.2 mm	80 ns
TC514900AFTL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		75 mA	524288 words	NO	COMMON	5	5	9	SMALL OUTLINE	SO28(UNSPEC)	DRAMs		70 Cel	3-STATE	512KX9	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28				Not Qualified	4718592 bit			e0			.0003 Amp		100 ns
TC5116400FT-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				18.41 mm	60 ns
TC514260BZ-70	Toshiba	FAST PAGE DRAM		40	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			262144 words			5		16	IN-LINE			1.27 mm			256KX16	256K		TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm		Not Qualified	4194304 bit	4.5 V		e0				51.2 mm	70 ns
TC514410AZ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				25.8 mm	100 ns
TC511000AZ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			1.27 mm	70 Cel		1MX1	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				25.8 mm	100 ns
TC514900AJL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words			5		9	SMALL OUTLINE			1.27 mm	70 Cel		512KX9	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.7 mm	10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0				18.42 mm	80 ns
TC5117400BST-50	Toshiba	FAST PAGE DRAM							FAST PAGE		1			ASYNCHRONOUS		4194304 words					4							4MX4	4M				1					Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						50 ns
TC5118160AFT-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	MOS	GULL WING	ASYNCHRONOUS		1048576 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				20.95 mm	70 ns
TC514400JL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				17.15 mm	100 ns
TC511000BTR-70	Toshiba	FAST PAGE DRAM		20	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			1048576 words			5		1	SMALL OUTLINE, THIN PROFILE			.5 mm			1MX1	1M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	6 mm	Not Qualified	1048576 bit	4.5 V						14.4 mm	70 ns
TC514190BZ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		55 mA	262144 words	NO	COMMON	5	5	18	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T40				Not Qualified	4718592 bit			e0			.001 Amp		100 ns
TC5118180BJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	42	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			5		18	SMALL OUTLINE			1.27 mm	70 Cel		1MX18	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42	5.5 V	3.7 mm	10.16 mm	Not Qualified	18874368 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				27.31 mm	60 ns
TC514100AZL-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				25.8 mm	70 ns
TC514410AP-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.4 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				24.6 mm	60 ns
TC514400AJ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				17.15 mm	70 ns
TC511664ZL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		16	IN-LINE			1.27 mm	70 Cel		64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				51.2 mm	100 ns
TC5116100TR-60	Toshiba	FAST PAGE DRAM		24	TSOP2-R		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			16777216 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm			16MX1	16M			DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V						18.41 mm	60 ns
TC5116100BTR-70	Toshiba	FAST PAGE DRAM		24	TSOP2-R		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			16777216 words			5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm			16MX1	16M			DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V						18.41 mm	70 ns
TC514400AZ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				25.8 mm	80 ns
TC5117400BSR-60	Toshiba	FAST PAGE DRAM							FAST PAGE		1	CMOS		ASYNCHRONOUS		4194304 words					4							4MX4	4M				1					Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						60 ns
TC514400AZ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				25.8 mm	100 ns
TC5117400BSR-70	Toshiba	FAST PAGE DRAM							FAST PAGE		1	CMOS		ASYNCHRONOUS		4194304 words					4							4MX4	4M				1					Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						70 ns
TC5117800CJS-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words	YES		5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.7 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH					18.42 mm	60 ns
TC511000JL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		60 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	1048576 bit			e0			.0003 Amp		100 ns
TC514900AFTL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		85 mA	524288 words	NO	COMMON	5	5	9	SMALL OUTLINE	SO28(UNSPEC)	DRAMs		70 Cel	3-STATE	512KX9	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28				Not Qualified	4718592 bit			e0			.0003 Amp		80 ns
TC514280BZ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		85 mA	262144 words	NO	COMMON	5	5	18	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T40				Not Qualified	4718592 bit			e0			.001 Amp		100 ns
TC5118320BFT-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	70	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		524288 words			5		32	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G70	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				23.49 mm	60 ns
TC514190BJ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		55 mA	262144 words	NO	COMMON	5	5	18	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4718592 bit			e0			.001 Amp		100 ns
TC514800AFTL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		75 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28				Not Qualified	4194304 bit			e0			.0003 Amp		100 ns
TC5117400CST-50	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.14 mm	50 ns
TC51V16400BST-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	16777216 bit			e0			.0005 Amp		60 ns
TC5117400Z-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	ZIP	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		4	IN-LINE			1.27 mm	70 Cel		4MX4	4M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T24	5.5 V	12.07 mm		Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				30.88 mm	60 ns
TC51V17800BNJ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words			3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28	3.6 V	3.7 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	NOT SPECIFIED	NOT SPECIFIED		18.42 mm	70 ns
TC51V16160CFT-50	Toshiba	FAST PAGE DRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.95 mm	50 ns
TC511000AP-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	70 Cel		1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0				22 mm	70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.