FAST PAGE DRAM DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

TC514260BZ-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

40

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

75 mA

262144 words

NO

COMMON

5

5

16

IN-LINE

ZIP40,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T40

Not Qualified

4194304 bit

e0

.001 Amp

100 ns

TC514266BP-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

DIP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

4

IN-LINE

2.54 mm

70 Cel

256KX4

256K

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T20

5.5 V

4.4 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

24.6 mm

60 ns

TC5116100J-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

16777216 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-J24

5.5 V

3.75 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

18.42 mm

60 ns

TC514400AFT-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G20

5.5 V

1.2 mm

7.7 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

17.14 mm

60 ns

TC514100AZL-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

4194304 words

5

1

IN-LINE

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

TIN LEAD

ZIG-ZAG

1

R-PZIP-T20

5.5 V

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

25.8 mm

100 ns

TC514410AZ-70

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

1048576 words

5

4

IN-LINE

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

ZIG-ZAG

1

R-PZIP-T20

5.5 V

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

25.8 mm

70 ns

TC511000BFTL-80

Toshiba

FAST PAGE DRAM

20

TSOP1

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

1048576 words

5

1

SMALL OUTLINE, THIN PROFILE

.5 mm

1MX1

1M

DUAL

1

R-PDSO-G20

5.5 V

1.2 mm

6 mm

Not Qualified

1048576 bit

4.5 V

14.4 mm

80 ns

TC5117800CSTS-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

TSOP2

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

2097152 words

YES

5

8

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

1

R-PDSO-G28

5.5 V

1.2 mm

7.7 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

18.41 mm

60 ns

TC511000ZL-12

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

50 mA

1048576 words

SEPARATE

5

5

1

IN-LINE

ZIP20,.1

DRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

1048576 bit

e0

.0003 Amp

120 ns

TC511000AJL-80

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

1MX1

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.55 mm

7.7 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

17.15 mm

80 ns

TC5117440BSJ-70

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

95 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

TC51V16400CST-50

Toshiba

FAST PAGE DRAM

COMMERCIAL

24

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

3.3

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G24

3.6 V

1.2 mm

7.7 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.14 mm

50 ns

TC51V4400AFTL-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

55 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

DRAMs

.635 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.00015 Amp

100 ns

TC5117400CSJ-40

Toshiba

FAST PAGE DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.7 mm

7.7 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.15 mm

40 ns

TC51V17800BNJ60

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

125 mA

2097152 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

16777216 bit

e0

.0005 Amp

60 ns

TC514400ASJL-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

7.7 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH

e0

17.15 mm

60 ns

TC511000P-85

Toshiba

FAST PAGE DRAM

COMMERCIAL

18

DIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

70 mA

1048576 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

DRAMs

2.54 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T18

Not Qualified

1048576 bit

e0

.001 Amp

85 ns

TC5116400BST-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.001 Amp

60 ns

TC511000AJ-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

1MX1

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.55 mm

7.7 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

17.15 mm

100 ns

TC5116400CSJ-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.7 mm

7.7 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.15 mm

60 ns

TC51V17800BNT-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

125 mA

2097152 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

16777216 bit

e0

.0005 Amp

60 ns

TC514260BTR-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

75 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.001 Amp

100 ns

TC514256AZ-70

Toshiba

FAST PAGE DRAM

COMMERCIAL

19

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

4

IN-LINE

1.27 mm

70 Cel

256KX4

256K

0 Cel

TIN LEAD

ZIG-ZAG

1

R-PZIP-T19

5.5 V

10.16 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

25.8 mm

70 ns

TC51V17400CSJ-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

4194304 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.0005 Amp

60 ns

TC514260BFT-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

75 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.001 Amp

100 ns

TC514800AZLL-80

Toshiba

FAST PAGE DRAM

28

ZIP

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

524288 words

5

8

IN-LINE

1.27 mm

512KX8

512K

ZIG-ZAG

1

R-PZIP-T28

5.5 V

10.16 mm

Not Qualified

4194304 bit

4.5 V

36.2 mm

80 ns

TC514266BFT-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

TSOP1

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

256KX4

256K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G20

5.5 V

1.2 mm

6 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

14.4 mm

60 ns

TC514800AJLL-70

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

524288 words

YES

5

8

SMALL OUTLINE

1.27 mm

70 Cel

512KX8

512K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J28

5.5 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH

e0

18.42 mm

70 ns

TC514256AP-80

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

DIP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

4

IN-LINE

2.54 mm

70 Cel

256KX4

256K

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T20

5.5 V

4.4 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

24.6 mm

80 ns

TC511000AP-80

Toshiba

FAST PAGE DRAM

COMMERCIAL

18

DIP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

1048576 words

5

1

IN-LINE

2.54 mm

70 Cel

1MX1

1M

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T18

5.5 V

4.4 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

22 mm

80 ns

TC5116400CSJ-50

Toshiba

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.7 mm

7.7 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.15 mm

50 ns

TC514900AJ-70

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

524288 words

5

9

SMALL OUTLINE

1.27 mm

70 Cel

512KX9

512K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J28

5.5 V

3.7 mm

10.16 mm

Not Qualified

4718592 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

18.42 mm

70 ns

TC511000AZL-80

Toshiba

FAST PAGE DRAM

COMMERCIAL

19

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

1048576 words

5

1

IN-LINE

1.27 mm

70 Cel

1MX1

1M

0 Cel

TIN LEAD

ZIG-ZAG

1

R-PZIP-T19

5.5 V

10.16 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

25.8 mm

80 ns

TC514256BZL-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

19

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

4

IN-LINE

1.27 mm

70 Cel

256KX4

256K

0 Cel

TIN LEAD

ZIG-ZAG

1

R-PZIP-T19

5.5 V

10.16 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

25.8 mm

60 ns

TC5116180AJ-70

Toshiba

FAST PAGE DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

18

SMALL OUTLINE

1.27 mm

70 Cel

1MX18

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J42

5.5 V

3.7 mm

10.16 mm

Not Qualified

18874368 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

27.31 mm

70 ns

TC514400ASJL-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

7.7 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.15 mm

100 ns

TC514273BJ-70

Toshiba

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

256KX16

256K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J40

5.5 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

26.04 mm

70 ns

TC514410ASJ-80

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

7.7 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

17.15 mm

80 ns

TC51V17800BNJS-70

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

2097152 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-J28

3.6 V

3.7 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

NOT SPECIFIED

NOT SPECIFIED

18.42 mm

70 ns

TC514256P-12

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

DIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

55 mA

262144 words

COMMON

5

5

4

IN-LINE

DIP20,.3

DRAMs

2.54 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T20

Not Qualified

1048576 bit

e0

.001 Amp

120 ns

TC514800AZL-80

Toshiba

FAST PAGE DRAM

28

ZIP

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

524288 words

5

8

IN-LINE

1.27 mm

512KX8

512K

TIN LEAD

ZIG-ZAG

1

R-PZIP-T28

5.5 V

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

36.2 mm

80 ns

TC514900AFT-80

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

524288 words

5

9

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

512KX9

512K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G28

5.5 V

1.2 mm

10.16 mm

Not Qualified

4718592 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

18.41 mm

80 ns

TC51V18160AFT-60

Toshiba

FAST PAGE DRAM

44

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

MOS

GULL WING

ASYNCHRONOUS

1048576 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

3-STATE

1MX16

1M

DUAL

1

R-PDSO-G44

1.2 mm

10.16 mm

Not Qualified

16777216 bit

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

20.95 mm

60 ns

TC51V16400CST-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

24

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

3.3

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G24

3.6 V

1.2 mm

7.7 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.14 mm

60 ns

TC514400AFTL-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G20

5.5 V

1.2 mm

7.7 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH

e0

17.14 mm

60 ns

TC511665J-80

Toshiba

FAST PAGE DRAM

COMMERCIAL

40

SOJ

256

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

65536 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

64KX16

64K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J40

5.5 V

3.7 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

26.04 mm

80 ns

TC514280BZLL-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

40

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

75 mA

262144 words

NO

COMMON

5

5

18

IN-LINE

ZIP40,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T40

Not Qualified

4718592 bit

e0

100 ns

TC514266BJ-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

256KX4

256K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.55 mm

7.7 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

17.15 mm

60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.