LPDDR3 DRAM DRAM 69

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
EDFP164A1PB-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	216	VFBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		402653184 words	YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel			384MX64	384M	-30 Cel		BOTTOM	1	S-PBGA-B216	1.3 V	.82 mm		15 mm	25769803776 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED		15 mm
EDFB164A1MA-GD-F-R	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel			512MX64	512M	-30 Cel		BOTTOM	1	S-PBGA-B253	1.3 V	.95 mm		12.5 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					12.5 mm
EDFP164A3PD-JDTJ-F-R	Micron Technology	LPDDR3 DRAM	OTHER	256	VFBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		402653184 words	YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm	105 Cel			384MX64	384M	-30 Cel		BOTTOM	1	S-PBGA-B256	1.3 V	.8 mm		14 mm	25769803776 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					14 mm
EDFA164A2PP-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	220	VFBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel			256MX64	256M	-30 Cel		BOTTOM	1	S-PBGA-B220	1.3 V	.99 mm		14 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED		14 mm
EDFP164A3PD-GDTJ-F-D	Micron Technology	LPDDR3 DRAM	OTHER	256	VFBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		402653184 words	YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm	105 Cel			384MX64	384M	-30 Cel		BOTTOM	1	S-PBGA-B256	1.3 V	.8 mm		14 mm	25769803776 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					14 mm
EDFB164A1MA-JD-F-R	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel			512MX64	512M	-30 Cel		BOTTOM	1	S-PBGA-B253	1.3 V	.95 mm		12.5 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					12.5 mm
EDFA232A2MA-GD-F-R	Micron Technology	LPDDR3 DRAM		178	VFBGA	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm				512MX32	512M			BOTTOM	1	R-PBGA-B178	1.3 V	1 mm		10.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; IT ALSO HAVE 0.65 MM PITCH		NOT SPECIFIED	NOT SPECIFIED		11.5 mm
EDFA364A3MA-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel			256MX64	256M	-30 Cel		BOTTOM	1	S-PBGA-B253	1.3 V	.85 mm		12.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED		12.5 mm
EDF8132A1MC-GD-F-R	Micron Technology	LPDDR3 DRAM		178	VFBGA	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm				256MX32	256M			BOTTOM	1	R-PBGA-B178	1.3 V	.9 mm		11.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					12 mm
EDFP164A3PD-GD-F-R	Micron Technology	LPDDR3 DRAM	OTHER	256	VFBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		402653184 words	YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm	85 Cel			384MX64	384M	-30 Cel		BOTTOM	1	S-PBGA-B256	1.3 V	.8 mm		14 mm	25769803776 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					14 mm
EDF8164A3MA-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel			128MX64	128M	-30 Cel		BOTTOM	1	S-PBGA-B253	1.3 V	.85 mm		11 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					11 mm
EDF8164A3PK-GD-F-D	Micron Technology	LPDDR3 DRAM		216	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				128MX64	128M			BOTTOM	1	S-PBGA-B216	1.3 V	.7 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY					12 mm
EDFA164A2PK-JD-F-R	Micron Technology	LPDDR3 DRAM		216	VFBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				256MX64	256M			BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY					12 mm
EDF8132A3MA-GD-F-D	Micron Technology	LPDDR3 DRAM		178	VFBGA	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm				256MX32	256M			BOTTOM	1	R-PBGA-B178	1.3 V	.85 mm		10.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; IT ALSO HAVE 0.65 MM PITCH		NOT SPECIFIED	NOT SPECIFIED		11.5 mm
EDF8132A3MA-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	178	BGA	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	YES		1.2	32	GRID ARRAY		.8 mm	85 Cel			256MX32	256M	-30 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B178	1.3 V	.85 mm		10.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1				11.5 mm
MT52L256M64D2PP-107WT:BTR	Micron Technology	LPDDR3 DRAM																																							NOT SPECIFIED	NOT SPECIFIED
MT52L256M64D2LZ-107XT:B	Micron Technology	LPDDR3 DRAM	OTHER	216	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	320 mA	268435456 words	YES	COMMON	1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16	.4 mm	105 Cel		3-STATE	256MX64	256M	-30 Cel		BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm	933 MHz	12 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM				.012 Amp	12 mm
MT52L1G32D4PG-107WT:B	Micron Technology	LPDDR3 DRAM	OTHER	178	VFBGA	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel			1GX32	1G	-30 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B178	1.3 V	1 mm		11.5 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY	e1				12 mm
MT52L256M64D2LZ-107WT:B	Micron Technology	LPDDR3 DRAM	OTHER	216	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	320 mA	268435456 words	YES	COMMON	1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16	.4 mm	85 Cel		3-STATE	256MX64	256M	-30 Cel		BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm	933 MHz	12 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED	.012 Amp	12 mm
MT52L256M64D2GN-107WT:B	Micron Technology	LPDDR3 DRAM		256	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				256MX64	256M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B256	1.3 V	.7 mm		14 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1				14 mm
MT52L256M64D2PP-107WT:B	Micron Technology	LPDDR3 DRAM	OTHER	216	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	YES	CONFIGURABLE	1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,12X12,16	.4 mm	85 Cel	NO	COMMON	256MX64	256M	-30 Cel		BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					12 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.