NIBBLE MODE DRAM DRAM 424

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
THM81001S-85	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		560 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		SINGLE		R-PSMA-N30		20.32 mm		Not Qualified	8388608 bit				.008 Amp		85 ns
TC511001BZ-60	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words		5		1	IN-LINE			1.27 mm	70 Cel		1MX1	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		25.8 mm	60 ns
THM41001L-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	25		512		PLASTIC/EPOXY		NO		CMOS			240 mA	1048576 words	SEPARATE	5	5	4		SIP25,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	4194304 bit			e0			100 ns
TC511001J-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		50 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	1048576 bit			e0	.001 Amp		120 ns
TC511001AZ-80	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words		5		1	IN-LINE			1.27 mm	70 Cel		1MX1	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		25.8 mm	80 ns
THM81001L-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			400 mA	1048576 words	COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	Tin/Lead (Sn/Pb)	SINGLE				22.86 mm		Not Qualified	8388608 bit			e0	.008 Amp		120 ns
TC511001P-85	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		70 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0	.001 Amp		85 ns
TMM41257AT-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		72 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			120 ns
TMM41257P-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			120 ns
THM91001S-85	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		630 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		SINGLE		R-PSMA-N30		20.32 mm		Not Qualified	9437184 bit				.009 Amp		85 ns
TC511001AJ-70	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel		1MX1	1M	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm	7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		17.15 mm	70 ns
THM91021L-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			450 mA	1048576 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	Tin/Lead (Sn/Pb)	SINGLE				12.7 mm		Not Qualified	9437184 bit			e0	.009 Amp		120 ns
TC511001AP-70	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words		5		1	IN-LINE			2.54 mm	70 Cel		1MX1	1M	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		22 mm	70 ns
TC514101ASJ-60	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		17.15 mm	60 ns
TC514101J-80	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		17.15 mm	80 ns
TC514101AP-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words		5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		22 mm	100 ns
TMM41257AT-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		80 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			100 ns
TMM41257AP-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		80 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			100 ns
THM41001L-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	25		512		PLASTIC/EPOXY		NO		CMOS			200 mA	1048576 words	SEPARATE	5	5	4		SIP25,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	4194304 bit			e0			120 ns
TMM411001C-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	1048576 bit			e0			100 ns
TMM41257AP-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		72 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			120 ns
TMM41257P-15	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			150 ns
TMM41257AZ-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		80 mA	262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			100 ns
THM91001L-85	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			630 mA	1048576 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	Tin/Lead (Sn/Pb)	SINGLE				22.86 mm		Not Qualified	9437184 bit			e0	.009 Amp		85 ns
TC514101AP-70	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words		5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		22 mm	70 ns
TC514101J-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		17.15 mm	100 ns
THM81001L-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			480 mA	1048576 words	COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	Tin/Lead (Sn/Pb)	SINGLE				22.86 mm		Not Qualified	8388608 bit			e0	.008 Amp		100 ns
TC511001AP-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words		5		1	IN-LINE			2.54 mm	70 Cel		1MX1	1M	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		22 mm	100 ns
TC514101Z-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words		5		1	IN-LINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		25.8 mm	100 ns
TC511001J-85	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		70 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	1048576 bit			e0	.001 Amp		85 ns
TC514101AZ-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words		5		1	IN-LINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		25.8 mm	100 ns
TC514101ASJ-70	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		17.15 mm	70 ns
TC511001P-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0	.001 Amp		100 ns
TC514101ASJ-80	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		17.15 mm	80 ns
TC511001BJ-60	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel		1MX1	1M	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm	7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		17.15 mm	60 ns
TC514101ASJ-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		17.15 mm	100 ns
TC511001BP-60	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words		5		1	IN-LINE			2.54 mm	70 Cel		1MX1	1M	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		22 mm	60 ns
TC511001P-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		50 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0	.001 Amp		120 ns
TC514101AZ-60	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words		5		1	IN-LINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		25.8 mm	60 ns
TC514101AZ-80	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words		5		1	IN-LINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		25.8 mm	80 ns
THM81001S-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		480 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		SINGLE		R-PSMA-N30		20.32 mm		Not Qualified	8388608 bit				.008 Amp		100 ns
TMM41257AT-15	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		65 mA	262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			150 ns
TMM41257T-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			120 ns
TC511001AJ-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel		1MX1	1M	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm	7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		17.15 mm	100 ns
TC514101AJ-70	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		17.15 mm	70 ns
TMM41257AP-15	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		65 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			150 ns
TC511001J-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		60 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	1048576 bit			e0	.001 Amp		100 ns
TC511001BFT-60	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	TSOP1	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words		5		1	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		1MX1	1M	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	6 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		14.4 mm	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.