NIBBLE MODE DRAM DRAM 424

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Maximum Access Time
UPD4217101G5M-60	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		16777216 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0		60 ns
UPD424101GSM-60	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	e0	.001 Amp	60 ns
UPD4217101V-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	ZIP	2048	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		16777216 words	SEPARATE	5	5	1	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24	Not Qualified	16777216 bit	e0		100 ns
UPD424101GS-70	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	e0	.001 Amp	70 ns
UPD424101GS-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	e0	.001 Amp	100 ns
UPD424101V-70L	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	100 mA	4194304 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	4194304 bit	e0	.0003 Amp	70 ns
UPD4217101G5-80	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		16777216 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0		80 ns
UPD424101GSM-80	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	e0	.001 Amp	80 ns
UPD424101GSM-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	e0	.001 Amp	100 ns
MC-421000B9B-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	540 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		SINGLE	R-PSMA-N30	Not Qualified	9437184 bit		.009 Amp	100 ns
MC-421000B8A-12	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS		400 mA	1048576 words	COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M	Tin/Lead (Sn/Pb)	SINGLE		Not Qualified	8388608 bit	e0	.008 Amp	120 ns
UPD421001LA-80	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	70 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	1048576 bit	e0	.001 Amp	80 ns
UPD424101LA-80L	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	e0	.0003 Amp	80 ns
UPD4216101G5-80	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		16777216 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0		80 ns
UPD421001V-12	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	1048576 bit	e0		120 ns
MC-421000B8A-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS		480 mA	1048576 words	COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M	Tin/Lead (Sn/Pb)	SINGLE		Not Qualified	8388608 bit	e0	.008 Amp	100 ns
UPD4217101LE-60	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		16777216 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24	Not Qualified	16777216 bit	e0		60 ns
UPD41257V-15	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T16	Not Qualified	262144 bit	e0		150 ns
UPD4216101G5-70	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		16777216 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0		70 ns
UPD4216101LE-70	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		16777216 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24	Not Qualified	16777216 bit	e0		70 ns
UPD41257L-20	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND		262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel		3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18	Not Qualified	262144 bit	e0		200 ns
UPD421001C-70	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18	Not Qualified	1048576 bit	e0	.001 Amp	70 ns
UPD4216101V-80	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		16777216 words	SEPARATE	5	5	1	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24	Not Qualified	16777216 bit	e0		80 ns
UPD4217101V-80	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	ZIP	2048	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		16777216 words	SEPARATE	5	5	1	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24	Not Qualified	16777216 bit	e0		80 ns
UPD424101LB-80	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.4	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	e0	.001 Amp	80 ns
UPD424101LA-10L	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	e0	.0003 Amp	100 ns
UPD4217101G5M-70	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		16777216 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0		70 ns
UPD4217101V-70	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	ZIP	2048	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		16777216 words	SEPARATE	5	5	1	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24	Not Qualified	16777216 bit	e0		70 ns
UPD4217101G5M-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		16777216 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0		100 ns
UPD421001V-80	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	70 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	80 ns
UPD41257D-20	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel		3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16	Not Qualified	262144 bit	e0		200 ns
UPD4216101V-60	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		16777216 words	SEPARATE	5	5	1	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24	Not Qualified	16777216 bit	e0		60 ns
UPD424101LB-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.4	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	e0	.001 Amp	100 ns
UPD424101V-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	4194304 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	4194304 bit	e0	.001 Amp	100 ns
UPD4216101G5M-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		16777216 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0		100 ns
UPD4216101G5M-80	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		16777216 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0		80 ns
UPD4217101LE-70	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		16777216 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24	Not Qualified	16777216 bit	e0		70 ns
UPD424101GSM-70	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	e0	.001 Amp	70 ns
UPD41257V-12	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T16	Not Qualified	262144 bit	e0		120 ns
MC-421000B9A-12	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS		450 mA	1048576 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M	Tin/Lead (Sn/Pb)	SINGLE		Not Qualified	9437184 bit	e0	.009 Amp	120 ns
UPD41257D-15	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel		3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16	Not Qualified	262144 bit	e0		150 ns
MC-421000B9B-80	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	630 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		SINGLE	R-PSMA-N30	Not Qualified	9437184 bit		.009 Amp	80 ns
UPD424101V-10L	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	4194304 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	4194304 bit	e0	.0003 Amp	100 ns
UPD4216101LE-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		16777216 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24	Not Qualified	16777216 bit	e0		100 ns
UPD424101GSM-70L	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	e0	.0003 Amp	70 ns
UPD424101GSM-60L	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	e0	.0003 Amp	60 ns
UPD41257V-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T16	Not Qualified	262144 bit	e0		100 ns
UPD4217101G5-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		16777216 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24	Not Qualified	16777216 bit	e0		100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.